july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp61511d gated protectors tisp61511d dual forward-conducting p-gate thyristors programmable overvoltage protectors device symbol dual voltage-programmable protectors. C wide 0 to -80 v programming range C low 5 ma max. triggering current C high 150 ma min. holding current rated for international surge wave shapes d package (top view) description the tisp61511d is a dual forward-conducting buffered p-gate over- voltage protector. it is designed to protect monolithic subscriber line interface circuits, slics, against overvoltages on the telephone line caused by lightning, ac power contact and induction. the tisp61511d limits voltages that exceed the slic supply rail voltage. volt a ge wa ve shape standard i tsp a 2/10 s tr-nwt-001089 170 1.2/50 s ets 300 047-1 90 0.5/700 s rlm88/i 3124 40 10/700 s k17, k20, k21 40 10/1000 s tr-nwt-001089 30 functional replacements for .............................................. ul recognized component md6xanb nc - no internal connection terminal typical application names shown in parenthesis 1 2 3 4 5 6 7 8 k1 a a k2 g k1 k2 nc (tip) (ground) (ground) (ring) (gate) (tip) (ring) terminals k1, k2 and a c orrespond to the alternative line designators of t, r and g or a, b and c. the negative protection voltage is controlled by the voltage, v gg, applied to the g terminal. sd6xae a k1 g k2 the slic line driver section is typically powered from 0 v (ground) and a negative voltage in the region of -10 v to -70 v. the protector gate is connected to this negative supply. this references the protection (clipping) voltage to the negative supply voltage. as the protection voltage will track the negative supply voltage the overvoltage stress on the slic is minimized. positive overvoltages are clipped to ground by diode forward conduction. negative overvoltages are initially clipped close to t he slic negative supply rail value. if sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. as the current subsides the high holding current of the crowbar helps prevent d.c. latchup. these monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and i n normal system operation they are virtually transparent. the buffered gate design reduces the loading on the slic supply during overvoltages c aused by power cross and induction. *rohs directive 2002/95/ec jan 27 2003 including annex * r o h s c o m p l ia n t device type package type lcp1511, lcp1511d, attl7591as, mgss150-1 8-pin small- outline tisp61511dr-s for taped and reeled functional replacement order as how to order device package carrier tisp61511 d (8-pin small-outline) embossed tape reeled tisp 61511dr-s order as
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. recommended operating conditions tisp61511d gated protectors absolute maximum ratings rating symbol value unit repetitive peak off-state voltage, v gk =0, -40 c t j 85 cv drm -100 v repetitive peak gate-cathode voltage, v ka =0, -40 c t j 85 cv gkrm -85 v non-repetitive peak on-state pulse current (see notes 1 and 2) i tsp a 10/1000 s 5/310 s 0.2/310 s 1/20 s 2/10 st j =-40 c t j =25 c, 85 c 30 40 40 90 120 170 non-repetitive peak on-state curr ent, 50 hz (see notes 1 and 2) i tsm a full-sine-wave, 20 ms 5 1s 3.5 non-repetitive peak gate current, half-sine-wave, 10 ms (see notes 1 and 2) i gsm 2a junction temperatur e t j -55 to +150 c storage temperature range t stg -55 to +150 c notes: 1. initially the protector must be in thermal equilibrium with -40 c t j 85 c. the surge may be repeated after the device returns to its initial conditions. see the applications section for the details of the impulse generators. 2. the rated current values may be applied either to the ring to ground or to the tip to ground terminal pairs. additionally, bo th terminal pairs may have their rated current values applied simultaneously (in this case the ground terminal current will be twi ce the rated current value of an individual terminal pair). above 85 c, derate linearly to zero at 150 c lead temperature. electrical characteristics, t j = 25 c (unless otherwise noted) component min typ max unit c g gate decoupling capacitor 220 nf parameter test conditions min typ max unit i d off-state current v d =-85v, v gk =0 t j =25 c5 a t j =70 c50 a v (bo) breakover voltage i t = 30 a, 10/1000 s, 1 kv, r s = 33 ? , di/dt (i) = 8 a/ s (see note 3) -58 v v gk(bo) gate-cathode voltage at breakover i t = 30 a, 10/700 s, 1.5 kv, r s =10 ? , di/ dt (i) = 14 a/ s (see note 3) i t = 30 a, 1.2/50 s, 1.5 kv, r s =10 ? , di/dt (i) = 70 a/ s (see note 3) i t = 38 a, 2/10 s, 2.5 kv, r s =61 ? , di/ dt (i) = 40 a/ s (see note 3) 10 20 25 v v t on-state voltage i t = 0.5 a, t w = 500 s i t =3a, t w = 500 s 3 4 v v f forward voltage i f =5a, t w = 500 s3v v frm peak forward recovery voltage i f = 30 a, 10/1000 s, 1 kv, r s =33 ? , di/dt (i) = 8 a/ s (see note 3) i t = 30 a, 10/700 s, 1.5 kv, r s =10 ? , di/dt (i) = 14 a/ s (see note 3) i t = 30 a, 1.2/50 s, 1.5 kv, r s =10 ? , di/dt (i) = 70 a/ s (see note 3) i t = 38 a, 2/10 s, 2.5 kv, r s =61 ? , di/ dt (i) = 40 a/ s (see note 3) 5 5 7 12 v note 3: all tests have c g = 220 nf and v gg = -48 v. r s is the current limiting resistor between the output of the impulse generator and the r or t terminal. see the applications section for the details of the impulse generators.
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp61511d gated protectors electrical characteristics, t j = 25 c (unless otherwise noted) (continued) i h holding current i t = 1 a, di/dt = -1a /ms, v gg = -48 v 150 ma i gas gate reverse current v gg = -75 v, k and a terminals connected t j =25 c5 a t j =70 c50 a i gt gate trigger current i t =3a, t p(g) 20 s, v gg =-48v 0.2 5 ma v gt gate trigger voltage i t =3a, t p(g) 20 s, v gg =-48v 2.5 v c ak anode-cathode off- state capacitance f=1mhz, v d =1v, i g = 0, (see note 4) v d = -3 v 100 pf v d =-48v 50 pf note 4: these capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. the unmeasured device terminals are a.c. connected to the guard terminal of the bridge. parameter test conditions min typ max unit thermal characteristics parameter test conditions min typ max unit r ja junctio n to free air thermal resistance p tot = 0.8 w, t a = 25 c 5 cm 2 , fr4 pcb d package 170 c/w
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. parameter measurement information tisp61511d gated protectors figure 1. voltage-current characteristic -v i s v s v gg v d i h i t v t i tsm i tsp v (bo) i (bo) i d quadrant i forward conduction characteristic +v +i i f v f i fsm (= |i tsm |) i fsp (= |i tsp |) -i quadrant iii switching characteristic pm6xaaa v gk(bo)
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. thermal information tisp61511d gated protectors figure 2. maximum non-recurring 50 hz current t - current duration - s 01 1 10 100 1000 i trms - maximum non-recurrent 50 hz current - a 1 10 vs current duration ti6laa v gen = 250 vrms r gen = 10 to 150 ?
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. device parameters tisp61511d gated protectors general thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. these were fixed vo ltage breakover triggered devices, likened to solid state gas discharge tubes. as these were new forms of thyristors, the existing th yristor terminology did not cover their special characteristics. this resulted in the invention of new terms based on the application usage and dev ice characteristic. initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabi lized. programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. similarly to the fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thin g. to help promote an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definition s used for this data sheet. in general, the bourns approach is to use terms related to the device internal structure, rather than its application us age as a single device may have many applications each using a different terminology for circuit connection. alternative symbol cross-reference guide this guide is intended to help the translation of alternative symbols to those used in this data sheet. as in some cases the al ternative symbols have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalenc e. no liability will be assumed from the use of this guide. parameter data sheet symbol al ternative symbol alternative parameter non-repetitive peak on -state pulse current i tsp i pp peak pulse current off-state current i d i r i rm reverse leakage current line/gnd gate reverse current (with a and k terminals connected) i gas i rg reverse leakage current gate/line off-state voltage v d v r v rm reverse voltage line/gnd peak forward recovery voltage v frm v fp peak forward voltage line/gnd breakover voltage v (bo) v sgl dynamic switching voltage gnd/line gate voltage, (v gg is gate supply voltage referenced to the a terminal) v g v gate v gate v s gate/gnd voltage repetitive peak off-state voltage v drm v mlg maximum voltage line/gnd repetitive peak gate-cathode voltage v gkm v mgl maximum voltage gate/line gate-cathode voltage v gk v gl gate/line voltage gate-cathode voltage at breakover v gk(bo) v dgl dynamic switching voltage gate/line cathode-anode voltage v k v lg v gnd/line line/gnd voltage anode-cathode capacitance c ak c off off-state capacitance line/gnd cathode 1 terminal k1 tip tip terminal cathode 2 terminal k2 ring ring terminal anode terminal a gnd ground terminal gate terminal g gate gate terminal thermal resistance, junction to ambient r ja r th (j-a) thermal resistance, junction to ambient
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp61511d gated protectors applications information electrical characteristics the electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction temperature, t j . hence a characteristic value will depend on the junction temperature at the instant of measurement. the values given in this data sheet were measured on commercial testers, which generally minimize the temperature rise caused by testing. application circuit figure 3 shows a typical tisp61511d slic card protection circuit. the incoming line wires, r and t, connect to the relay matrix via the series overcurrent protection. fusible resistors, fuses and positive temperature coefficient (ptc) resistors can be used for overcurre nt protection. resistors will reduce the prospective current from the surge generator for both the tisp61511d and the ring/test protector. the tisp7xxxf3 protector has the same protection voltage for any terminal pair. this protector is used when the ring generator configuration m ay be ground or battery-backed. for dedicated ground-backed ringing generators, the tisp3xxxf3 gives better protection as its inter-wire protec tion voltage is twice the wire to ground value. relay contacts 3a and 3b connect the line wires to the slic via the tisp61511d protector. the protector gate reference voltage comes from the slic negative supply (v bat ). a 220 nf gate capacitor sources the high gate current pulses caused by fast rising impulses. impulse conditions most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. wave shapes are classified in terms of peak amplitude (voltage or current), rise time and a decay time to 50 % of the maximum amplitude. the notation used for the wave shape is amplitude, rise time/decay time . a 38 a, 5/310 s wave shape would have a peak current value of 38 a, a rise time of 5 s and a decay time of 310 s. there are three categories of surge generator type; single wave shape, combination wave shape and circuit defined. single wave shape generators have essentially the same waveshape for the open circuit voltage and short circuit current (e.g. 10/1000 s open circuit voltage and short circuit current). combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 s open circuit voltage and 8/20 s short circuit current). circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 s open circuit voltage generator typically produces a 5/310 s short circuit current). if the combination or circuit defined generators operate into a finite resistance the wave shape produced is intermediate between the open circuit and short circuit values. figure 3. typical application circuit test relay ring relay slic relay test equip- ment ring generator s1a s1b r1a r1b ring wire tip wire th1 th2 th3 th4 th5 slic slic protector ring/test protection over- current protection s2a s2b tisp 61511d tisp 3xxxf3 or 7xxxf3 s3a s3b v bat 220 nf ai6xaa
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. impulse conditions (continued) tisp61511d gated protectors when the tisp switches into the on-state it has a very low impedance. as a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current waveshape that must be used to assess the tisp surge requirement. as an example, the cc itt ix k17 1.5 kv, 10/700 s surge is changed to a 38 a 5/310 s waveshape when driving into a short circuit. the impulse generators used for rated values are tabulated below impulse generators used for rated values standard peak voltage setting v voltage wave form s generator fictive source impedance y external series resistance y peak current a current wave form s tr-nwt-001089 2500 2/10 5 10 170 2/10 ets 300 047-1 3000 1.2/50 38 0 80 0.6/18 rlm88/i3124 1600 0.5/700 40 0 40 0.2/310 k17, k20, k21 1600 10/700 40 0 40 5/310 tr-nwt-001089 1000 10/1000 10 23 30 10/1000 figures 4. and 5. show how the tisp61511d limits negative and positive overvoltages. negative overvoltages (figure 4.) are init ially clipped close to the slic negative supply rail value (v bat ). if sufficient current is available from the overvoltage, then the protector (th5) will crowbar into a low voltage on-state condition. as the overvoltage subsides the high holding current of the crowbar prevents dc latchup. the protection voltage will be the sum of the gate supply (v bat ) and the peak gate-cathode voltage (v gk(bo) ). the protection voltage will be increased if there is a long connection between the gate decoupling capacitor, c, and the gate terminal. during the initial rise of a fast impulse , the gate current (i g ) is the same as the cathode current (i k ). rates of 70 a/ s can cause inductive voltages of 0.7 v in 2.5 cm of printed wiring track. to minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be minimized. inductive voltages in the protector cathode wiring can increase the protection voltage. these voltages can be minimized by rout ing the slic connection through the protector as shown in figure 3. positive overvoltages (figure 5.) are clipped to ground by forward conduction of the diode section in protector (th5). fast ris ing impulses will cause short term overshoots in forward voltage (v frm ). the thyristor protection voltage, (v (bo) ) increases under lightning surge conditions due to thyristor regeneration time. this increase is depen- dent on the rate of current rise, di/dt, when the tisp is clamping the voltage in its breakdown region. the diode protection vo ltage, known as the forward recovery voltage, (v frm ) is dependent on the rate of current rise, di/dt. an estimate of the circuit di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. the impulse generators used for characterizing the protectio n voltages are tabulated on the next page. figure 4. negative overvoltage condition figure 5. positive overvoltage condition c 220 nf i g th5 slic v bat slic protector tisp 61511d i k ai6xab th5 slic v bat slic protector tisp 61511d 220 nf i f ai6xac
july 1995 ?revised july 2008 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. impulse generators used for electrical characteristic values tisp61511d gated protectors standard peak voltage setting v voltage wave form s generator fictive source impedance y external series resistance y peak current a di/dt (i) initial rate of rise a/ s current wave form s tr-nwt-001089 2500 2/10 5 61 38 40 2/10 ets 300 047-1 1500 1.2/50 38 12 30 70 0.6/21 k17, k20, k21 1500 10/700 40 10 30 14 5/350 tr-nwt-001089 1000 10/1000 10 23 30 8 10/1000 tisp is a trademark of bourns, ltd., a bourns company, and is registered in u.s. patent and trademark office. bourns is a registered trademark of bourns, inc. in the u.s. and other countries.
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