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features advanced planar technology low on-resistance p-channel dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and rugge- dized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. parameter units i d @ t c = 25c continuous drain current, v gs @ -10v a i d @ t c = 100c continuous drain current, v gs @ -10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w p d @t c = 25c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 1.4 c/w r ? ja junction-to-ambient (pcb mount, steady state) ??? 40 110 0.71 20 11 310 -6.6 300 -55 to + 175 -5.0 max. -13 -9.0 -44 3.8 v dss -150v r ds(on) max. 0.29 ? i d -13a gds gate drain source d 2 pak AUIRF6215S s d g d g d s ! "#$%&'(")*' "#$ ? ' + ",--./ # i sd ? ,--.'0 ?? -#1.02'3 ? 3 ' ! ? 4$%& 5 ?? 6112 ?? #7 89: 5&;/,) <,1 = / : >.?,@@) ? ! @1%& static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -150 ??? ??? v ?? v dss / ? t j breakdown voltage temp. coefficient ??? -0.20 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 0.29 ? a ??? ??? -250 i gs s gate-to-source forward leakage ??? ??? -100 na gate-to-source reverse leakage ??? ??? 100 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? ??? 66 nc q gs gate-to-source charge ??? ??? 8.1 q gd gate-to-drain ("miller") charge ??? ??? 35 t d(on) turn-on delay time ??? 14 ??? ns t r rise time ??? 36 ??? t d(off) turn-off delay time ??? 53 ??? t f fall time ??? 37 ??? l s internal source inductance ??? 7.5 ??? nh b etween l ead, 6mm (0.25in.), from package & center o f di e co ntact c iss input capacitance ??? 860 ??? pf c os s output capacitance ??? 220 ??? c rs s reverse transfer capacitance ??? 130 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? -11 (body diode) a i sm pulsed source current ??? ??? -44 (body diode) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 160 240 ns q rr reverse recovery charge ??? 1.2 1.7 c t on forward turn-on time intrins ic turn-on time is negligible (turn-on is dominated by ls +ld) v ds = v gs , i d = -250 a v ds = -150v, v gs = 0v v ds = -120v, v gs = 0v, t j = 150c conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -10v, i d = -6.6a v gs = -10v, i d = -6.6a, t j =150c v ds = -25v, i d = -6.6a t j = 25c, i f = -6.6a di/dt = 100a/ s t j = 25c, i s = -6.6a, v gs = 0v showing the integral reverse p-n junction diode. r d = 12 ?? mosfet symbol v gs = 0v v ds = -25v conditions ? = 1.0mhz, see fig. 5 r g = 6.8 ? i d = -6.6a v dd = -75v i d = -6.6a v gs = -20v v gs = 20v v ds = -120v v gs = -10v conditions ! " #$$ $ %& #& '& qualification information ? d 2 pak msl1 charged device model class c5 (+/- 1125v) ?? aec-q101-005 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level rohs complia nt yes esd machine model class m3 (+/- 400v) ?? aec-q101-002 human body model class h1b (+/- 1000v) ?? aec-q101-001 ( ) * + , ! - . /& / 0 1 0 23 2 443 45 45 63 6 ' / 7 ! ! " dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. ordering information base part number package type standard pack complete part number form quantity AUIRF6215Strl d2pak tube 50 AUIRF6215S tape and reel left 800 AUIRF6215Strl tape and reel right 800 AUIRF6215Strr " # $ !% & $ ! % % % $ % $ # # $ ' ()"* + $ # , ) - . ! . # / ,# , + # # 0+ # $ , % # # & / 1 ! % $ , ! # # % % % $ # - $ # # $$ + # $ $ # %% 1 # #% % # - # # 2 3# # 1 % 3# # % # % % % % % %+ % # % # #%# - # 1 %$ 4# # # 5 )#5) "2 % 5) # , # #% 3# ! # #5) #6 % , # % #3# . ! # # # , $ $ # 24/2789:9 , ()"* 3# ! %# # 6 $ % # , 7 ## # ! 8 6 0 #"$$ $9$ 7;7 2$3$ %02 %& 9;<:= / >7; <=<6?7;= |
Price & Availability of AUIRF6215S
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