parameter symbol value unit collector-base voltage v cbo 1000 v collector-emitter voltage v ceo 450 v emitter-base voltage v ebo 7.0 v collector current i c 15 a base current i b 5.0 a total dissipation at p tot 150 w max. operating junction temperature t j 150 storage temperature t stg -55~150 BUV48A description parameter symbol test conditions min. typ. max. unit collector cut-off current i ces v ce =1000v, i e =0 0.5 ma emitter cut-off current i ebo v eb =5.0v, i c =0 0.1 ma collector-emitter sustaining voltage v ceo i c =100ma, i b =0 450 v dc current gain h fe v ce =5v, i c =8.0a 8 collector-emitter saturation voltage v ce(sat) i c =8.0a,i b =1.6a 1.5 v i c =12a,i b =2.4a 5.0 base-emitter saturation voltage v be(sat) i c =8.0a,i b =1.6a 1.6 v storage time t s v cc =300v, t p = 30 us 2.0 us npn silicon high power ttransistors product specification the BUV48A transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. they are particularly suited for line-operated switchmode applications such as: switching regulators inverters solenoid and relay drivers motor controls deflection circuits electrical characteristics ( ta = 25 ) absolute maximum ratings ( ta = 25 ) to-3pn tiger electronic co.,ltd
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