EMZ51 general purpose transister (dual transistors) datasheet l l outline parameter value emt6 v ceo 20 v i c 200 ma EMZ51 (sc-107c) parameter value v ceo -20 v i c -200 ma l l features l l inner circuit 1) general purpose. 2) 2sar522 and 2scr522 chips in one package. 3) transister elements are independent, eliminating interface. 4) mounting cost and area can be cut in half. 5) lead free/rohs compliant. l l application switching, led driver l l packaging specifications part no. package package size taping code reel size (mm) tape width (mm) basic ordering unit.(pcs) marking EMZ51 emt6 1616 t2r 180 8 8000 z51 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 1/9 20130905 - rev. 002
EMZ51 datasheet absolute maximum ratings (t a = 25c) parameter symbol tr1(npn) tr2(pnp) unit collector-base voltage v cbo 20 -20 v collector-emitter voltage v ceo 20 -20 v emitter-base voltage v ebo 5 -5 v collector current i c 200 -200 ma i cp *1 400 -400 ma power dissipation p d *2 *3 150 (total) mw junction temperature t j 150 range of storage temperature t stg -55 to + 150 electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. collector-base breakdown voltage bv cbo i c = 50 a 20 - - v collector-emitter breakdown voltage bv ceo i c = 1 ma 20 - - v emitter-base breakdown voltage bv ebo i e = 50 a 5 - - v collector cut-off current i cbo v cb = 20 v - - 0.1 a emitter cut-off current i ebo v eb = 5 v - - 0.1 a collector-emitter saturation voltage v ce(sat) i c = 100 ma, i b = 10 ma - 0.12 0.30 v dc current gain h fe v ce = 6 v, i c = 1 ma 120 - 560 - transition frequency f t v ce = 10 v, i e = -10 ma, f = 100 mhz - 400 - mhz output capacitance c ob v cb = 10 v, i e = 0 a, f = 1 mhz - 1.6 - pf electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. collector-base breakdown voltage bv cbo i c = -50 a -20 - - v collector-emitter breakdown voltage bv ceo i c = -1 ma -20 - - v emitter-base breakdown voltage bv ebo i e = -50 a -5 - - v collector cut-off current i cbo v cb = -20 v - - -0.1 a emitter cut-off current i ebo v eb = -5 v - - -0.1 a collector-emitter saturation voltage v ce(sat) i c = -100 ma, i b = -10 ma - -0.12 -0.30 v dc current gain h fe v ce = -6 v, i c = -1 ma 120 - 560 - transition frequency f t v ce = -10 v, i e = 10 ma, f = 100 mhz - 350 - mhz output capacitance c ob v cb = -10 v, i e = 0 a, f = 1 mhz - 2 - pf *1 pw=1ms single pulse *2 each terminal mounted on a reference footprint *3 120mw per element must not be exceeded. www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 2/9 20130905 - rev. 002
EMZ51 datasheet electrical characteristic curves(ta=25 ) fig.1 grounded emitter propagation characteristics fig.2 typical output characteristics fig.3 dc current gain vs. collector current(i) fig.4 dc current gain vs. collector current(ii) www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 3/9 20130905 - rev. 002
EMZ51 datasheet electrical characteristic curves (t a =25c) fig.5 collector-emitter saturation voltage vs. collector current(i) fig.6 collector-emitter saturation voltage vs. collector current(ii) fig.7 base-emitter saturation voltage vs. collector current fig.8 gain bandwidth product vs. emitter current www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 4/9 20130905 - rev. 002
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