CMLT8099 surface mount silicon dual npn transistor description: the central semiconductor CMLT8099 consists of two individual, isolated 8099 npn silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an sot-563 surface mount package. this device has been designed for small signal general purpose amplifier applications. marking code: c89 sot-563 case maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 80 v collector-emitter voltage v ceo 80 v emitter-base voltage v ebo 6.0 v continous collector current i c 500 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per transistor: (t a =25c unless otherwise noted) symbol test conditions min max units i cbo v cb =80v 0.1 a i ebo v be =6.0v 0.1 a bv cbo i c =100a 80 v bv ceo i c =10ma 80 v bv ebo i e =10a 6.0 v v ce(sat) i c =100ma, i b =5.0ma 0.4 v v ce(sat) i c =100ma, i b =10ma 0.3 v v be(on) v ce =5.0v, i c =10ma 0.6 0.8 v h fe v ce =5.0v, i c =1.0ma 100 300 h fe v ce =5.0v, i c =10ma 100 h fe v ce =5.0v, i c =100ma 75 f t v ce =5.0v, i c =10ma, f=100mhz 150 mhz c ob v cb =10v, i e =0, f=1.0mhz 6.0 pf c ib v be =0.5v, i c =0, f=1.0mhz 25 pf applications: ? small signal general purpose amplifiers features: ? device is halogen free by design ? current i c =500ma ? voltage v ceo =80v r2 (12-february 2014) www.centralsemi.com
CMLT8099 surface mount silicon dual npn transistor lead code: 1) emitter q1 2) base q1 3) collector q2 4) emitter q2 5) base q2 6) collector q1 marking code: c89 sot-563 case - mechanical outline pin configuration www.centralsemi.com r2 (12-february 2014)
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