to ? 92l 1. emitter 2. collector 3. base to-92l plastic-encapsulate transistors KTC3207 transistor (npn) features z high voltage z small collector output capacitance maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 1ma,i e =0 300 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 300 v emitter-base breakdown voltage v (br)ebo i e =1ma,i c =0 7 v collector cut-off current i cbo v cb =240v,i e =0 1 a emitter cut-off current i ebo v eb =7v,i c =0 1 a h fe(1) v ce =10v, i c =4ma 20 dc current gain h fe(2) v ce =10v, i c =20ma 30 150 collector-emitter saturation voltage v ce(sat) i c =10ma,i b =1ma 1 v base-emitter saturation voltage v be (sat) i c =10ma,i b =1ma 1 v collector output capacitance c ob v cb =20v,i e =0, f=1mhz 3 pf transition frequency f t v ce =10v,i c =20ma 50 mhz symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current 0.1 a p c collector power dissipation 1 w r ja thermal resistance from junction to ambient 125 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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