AM2342NE these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m( ? )i d (a) 86 @ v gs = 10v 5.2 128 @ v gs = 4.5v 3.7 product summary 40 ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe sot-23 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol limit units v ds 40 v gs 20 t a =25 o c5.2 t a =70 o c4.1 i dm 30 i s 1.6 a t a =25 o c1.3 t a =70 o c0.8 t j , t stg -55 to 150 o c power dissipation a p d operating junction and storage temperature range w continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a symbol maximum units t <= 5 sec 100 o c/ w steady-state 166 o c/w thermal resistance ratings parame te r maximum junction-to-ambient a r ja esd protected 2000v sot-23 top view d s g d g n-channel mosfet s product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. min typ max gate-threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 32 v, v gs = 0 v 1 v ds = 32 v, v gs = 0 v, t j = 55 o c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 20 a v gs = 10 v, i d = 5.2 a 86 v gs = 4.5 v, i d = 3.7 a 128 forward tranconductance a g fs v ds = 15 v, i d = 5.2 a 40 s diode forward voltage v sd i s = 2.3 a, v gs = 0 v 0.7 v total gate charge q g 4.0 gate-source charge q gs 1.1 gate-drain charge q gd 1.4 turn-on delay time t d(on) 16 ris e time t r 5 turn-off delay time t d(off) 23 fall-time t f 3 unit v dd = 25 v, r l = 25 ? , i d = 1 a, v gen = 10 v ns drain-source on-resistance a r ds(on) m ? v ds = 15 v, v gs = 4.5 v, i d = 5.2 a nc dynamic b ua i dss zero gate voltage drain current static test conditions symbol parame te r limits AM2342NE product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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