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IRGP4266PBF irgp4266 - epbf 1 www.irf.com ? 2012 international rectifier december 13, 2012 base part number package type standard pack orderable part number form quantity IRGP4266PBF to - 247ac tube 25 IRGP4266PBF irgp4266 - epbf to - 247ad tube 25 irgp4266 - epbf absolute maximum ratings parameter max. units v ces collector - to - emitter voltage 650 v i c @ t c = 25c continuous collector current 140 a i c @ t c = 100c continuous collector current 90 i cm pulse collector current, v ge =20v 300 i lm clamped inductive load current, v ge =20v ? 300 v ge continuous gate - to - emitter voltage 20 v p d @ t c = 25c maximum power dissipation 450 w p d @ t c = 100c maximum power dissipation 230 t j operating junction and - 40 to +175 c t stg storage temperature range soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6 - 32 or m3 screw 10 lbfin (1.1 nm) thermal resistance parameter min. typ. max. units r ? jc thermal resistance junction - to - case ? CCC CCC 0.33 c/w r ? cs thermal resistance, case - to - sink (flat, greased surface) CCC 0.24 CCC r ? ja thermal resistance, junction - to - ambient (typical socket mount) CCC 40 CCC insulated gate bipolar transistor IRGP4266PBF to - 247ac g c e g v ces = 650v i c = 90a, t c =100c t sc ?? 5.5s, t j(max) = 175c v ce(on) typ. = 1.7v @ i c = 75a applications ? industrial motor drive ? inverters ? ups ? welding features benefits low v ce(on) and switching losses high efficiency in a wide range of applications and switching frequencies square rbsoa and maximum junction temperature 175c improved reliability due to rugged hard switching performance and higher power capability positive v ce (on) temperature coefficient excellent current sharing in parallel operation 5.5s short circuit soa enables short circuit protection scheme lead - free, rohs compliant environmentally friendly ? g c e g irgp4266 - epbf to - 247ad g c e gate collector emitter e c g n - c h a n n e l
IRGP4266PBF/irgp4266 - epbf 2 www.irf.com ? 2012 international rectifier december 13, 2012 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector - to - emitter breakdown voltage 650 v v ge = 0v, i c = 100a ? ? v (br)ces / ? t j temperature coeff. of breakdown voltage 570 mv/c v ge = 0v, i c = 1.0ma (25c - 175c) v ce(on) collector - to - emitter saturation voltage 1.7 2.1 v i c = 75a, v ge = 15v, t j = 25c 2.1 i c = 75a, v ge = 15v, t j = 175c v ge(th) gate threshold voltage 5.5 7.7 v v ce = v ge , i c = 2.1ma ? v ge(th) / ? tj threshold voltage temp. coefficient - 22 mv/c v ce =v ge , i c = 2.1ma (25c - 175c) gfe forward transconductance 43 s v ce = 50v, i c = 75a, pw = 20s i ces collector - to - emitter leakage current 1.0 25 a v ge = 0v, v ce = 650v 1.1 v ge = 0v, v ce = 650v, t j = 175c ma i ges gate - to - emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. ? units conditions q g total gate charge (turn - on) 140 210 i c = 75a q ge gate - to - emitter charge (turn - on) 40 60 nc v ge = 15v q gc gate - to - collector charge (turn - on) 60 90 v cc = 400v e on turn - on switching loss 3.2 4.2 e off turn - off switching loss 1.7 2.6 mj i c = 75a, v cc = 400v, v ge = 15v e total total switching loss 4.9 6.8 r g = 10 ? , l = 200h, t j = 25c t d(on) turn - on delay time 80 95 energy losses include tail & diode t r rise time 85 105 ns reverse recovery ?? t d(off) turn - off delay time 200 220 t f fall time 40 55 e on turn - on switching loss 4.6 e off turn - off switching loss 2.4 mj i c = 75a, v cc = 400v, v ge =15v e total total switching loss 7.0 r g =10 ? , l=200h,t j = 175c t d(on) turn - on delay time 60 energy losses include tail & diode t r rise time 95 ns reverse recovery ?? t d(off) turn - off delay time 205 t f fall time 60 c ies input capacitance 4300 v ge = 0v c oes output capacitance 230 pf v cc = 30v c res reverse transfer capacitance 120 f = 1.0mhz t j = 175c, i c = 300a rbsoa reverse bias safe operating area full square v cc = 520v, vp 650v rg = 50 ? , v ge = +20v to 0v scsoa short circuit safe operating area 5.5 s t j = 150c,v cc = 400v, vp 600v rg = 50 ? , v ge = +15v to 0v notes: ? v cc = 80% (v ces ), v ge = 20v, l = 50h, r g = 50 ? . ? r ? is measured at t j of approximately 90c. ? refer to an - 1086 for guidelines for measuring v (br)ces safely. ? maximum limits are based on statistical sample size characterization. ? pulse width limited by max. junction temperature. ? values influenced by parasitic l and c in measurement.
IRGP4266PBF/irgp4266 - epbf 3 www.irf.com ? 2012 international rectifier december 13, 2012 fig. 4 - forward soa fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 5 - reverse bias soa t j = 175c; v ge = 20v fig. 1 - typical load current vs. frequency (load current= i rms of fundamental) 0.1 1 10 100 f , frequency ( khz ) 20 40 60 80 100 120 140 load current ( a ) for both: duty cycle : 50% tj = 175c tcase = 100c gate drive as specified power dissipation = 245w 25 50 75 100 125 150 175 t c (c) 0 20 40 60 80 100 120 140 i c (a) i square wave: v cc diode as specified 25 50 75 100 125 150 175 t c (c) 0 100 200 300 400 500 p tot (w) 1 10 100 1000 v ce , collector-to-emitter voltage (v) 0.01 0.1 1 10 100 1000 i c , collector-to -emitter current (a) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by v ce (on) 100sec dc 10 100 1000 v ce (v) 1 10 100 1000 i c (a)
IRGP4266PBF/irgp4266 - epbf 4 www.irf.com ? 2012 international rectifier december 13, 2012 fig. 8 - typ. igbt output characteristics t j = 175c; tp = 20s fig. 10 - typical v ce vs. v ge t j = 25c fig. 11 - typical v ce vs. v ge t j = 175c fig. 6 - typ. igbt output characteristics t j = - 40c; tp = 20s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20s fig. 9 - typical v ce vs. v ge t j = - 40c 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce = 150a 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce = 150a 6 8 10 12 14 16 18 20 v ge (v) 0 2 4 6 8 10 v ce (v) i ce = 38a i ce = 75a i ce = 150a 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i ce (a) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i ce (a) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v 0 2 4 6 8 10 v ce (v) 0 50 100 150 200 250 300 i ce (a) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 8.0v
IRGP4266PBF/irgp4266 - epbf 5 www.irf.com ? 2012 international rectifier december 13, 2012 fig. 16 - typ. switching time vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 75a; v ge = 15v fig. 17 - v ge vs. short circuit time v cc = 400v; t c = 150c fig. 14 - typ. switching time vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v fig. 15 - typ. energy loss vs. r g t j = 175c; l = 200h; v ce = 400v, i ce = 75a; v ge = 15v fig. 12 - typ. transfer characteristics v ce = 50v; tp = 20s fig. 13 - typ. energy loss vs. i c t j = 175c; l = 200h; v ce = 400v, r g = 10 ? ; v ge = 15v 8 10 12 14 16 v ge (v) 0 5 10 15 20 time (s) 0 100 200 300 400 current (a) t sc i sc 4 6 8 10 12 14 16 v ge, gate-to-emitter voltage (v) 0 50 100 150 200 250 300 i c, collector-to-emitter current (a) t j = 25c t j = 175c 20 40 60 80 100 120 140 160 i c (a) 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 energy (j) e off e on 0 20 40 60 80 100 r g ( ? ) 0 4000 8000 12000 energy (j) e off e on 0 20 40 60 80 100 r g ( ? ) 10 100 1000 10000 swiching time (ns) t r td off t f td on 0 20 40 60 80 100 120 140 160 i c (a) 10 100 1000 swiching time (ns) t r td off t f td on
IRGP4266PBF/irgp4266 - epbf 6 www.irf.com ? 2012 international rectifier december 13, 2012 fig 20. maximum transient thermal impedance, junction - to - case fig. 18 - typ. capacitance vs. v ce fig. 19 - typical gate charge vs. v ge ri (c/w) ? i (sec) ? 0.00738 0.000009 0.09441 0.000179 0.13424 0.002834 0.09294 0.0182 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.0001 0.001 0.01 0.1 1 thermal response ( z thjc ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= ? i ? ri ci= ? i ? ri ? c ? c ? 4 ? 4 r 4 r 4 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v ge , gate-to-emitter voltage (v) v ces = 400v v ces = 300v 0 100 200 300 400 500 v ce (v) 10 100 1000 10000 capacitance (pf) cies coes cres
IRGP4266PBF/irgp4266 - epbf 7 www.irf.com ? 2012 international rectifier december 13, 2012 fig.c.t.1 - gate charge circuit (turn - off) fig.c.t.2 - rbsoa circuit fig.c.t.4 - switching loss circuit fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit fig.c.t.5 - resistive load circuit d c 4 x d u t v c c s c s o a r g v c c d u t r = v c c i c m r e s i s t i v e l o a d 0 1 k v c c d u t l g a t e c h a r g e c i r c u i t l rg 80 v dut vcc + - rbsoa circuit l r g v c c d u t / d r i v e r d i o d e c l a m p / d u t - 5 v s w i t c h i n g l o s s g f o r c e c s e n s e 1 0 0 k d u t 0 . 0 0 7 5 f d 1 2 2 k e f o r c e c f o r c e e s e n s e b v c e s f i l t e r
IRGP4266PBF/irgp4266 - epbf 8 www.irf.com ? 2012 international rectifier december 13, 2012 fig. wf1 - typ. turn - off loss waveform @ t j = 175c using fig. ct.3 fig. wf2 - typ. turn - on loss waveform @ t j = 175c using fig. ct.4 fig. wf3 - typ. s.c. waveform @ t j = 150c using fig. ct.3 -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -1.4 -1.35 -1.3 -1.25 i ce (a) v ce (v) time(s) fig. wf.1 - typ. turn - off loss waveform @ tj=175 c using fig. ct.4 90% i ce 5% v ce 5% i ce eoff loss tf -50 0 50 100 150 200 250 300 350 400 450 -50 0 50 100 150 200 250 300 350 400 450 -10 -8 -6 -4 -2 0 2 4 6 8 ice (a) vce (v) time (us) typical short circuit (tj=150 c) vce ice -20 0 20 40 60 80 100 120 -100 0 100 200 300 400 500 600 -0.55 -0.5 -0.45 -0.4 -0.35 i ce (a) v ce (v) time (s) fig. wf.2 - typ. turn - on loss waveform @ tj=175 c using fig. ct.4 test current 90% test current 5% v ce 10% test current tr eon loss
IRGP4266PBF/irgp4266 - epbf 9 www.irf.com ? 2012 international rectifier december 13, 2012 to - 247ac package outline dimensions are shown in millimeters (inches) to - 247ac part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to - 247ac package is not recommended for surface mount application. 2x c "a" "a" e e2/2 q e2 2x l1 l d a e 2x b2 3x b lead tip see view "b" b4 j. f. b a ? .010 b a j. fajardo 1/29/10 a2 a1 ? .010 b a d1 s e1 thermal pad -a- ? p ? .010 b a view: "b" section: c-c, d-d, e-e (b, b2, b4) (c) base metal plating view: "a" - "a" year 1 = 2001 date code part number international logo rectifier assembly 56 57 irfpe30 135h line h indicates "lead-free" week 35 lot code in the assembly line "h" assembled on ww 35, 2001 notes: this part marking information applies to devices produced after 02/26/2001 note: "p" in assembly line position example: with assembly this is an irfpe30 lot code 5657
IRGP4266PBF/irgp4266 - epbf 10 www.irf.com ? 2012 international rectifier december 13, 2012 to - 247ad package outline dimensions are shown in millimeters (inches) to - 247ad part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ to - 247ad package is not recommended for surface mount application. a s s e m b l y y e a r 0 = 2 0 0 0 a s s e m b l e d o n w w 3 5 , 2 0 0 0 i n t h e a s s e m b l y l i n e " h " e x a m p l e : t h i s i s a n i r g p 3 0 b 1 2 0 k d - e l o t c o d e 5 6 5 7 w i t h a s s e m b l y p a r t n u m b e r d a t e c o d e i n t e r n a t i o n a l r e c t i f i e r l o g o 0 3 5 h 5 6 5 7 w e e k 3 5 l i n e h l o t c o d e n o t e : " p " i n a s s e m b l y l i n e p o s i t i o n i n d i c a t e s " l e a d - f r e e "
IRGP4266PBF/irgp4266 - epbf 11 www.irf.com ? 2012 international rectifier december 13, 2012 qualification information ? qualification level industrial ? (per jedec jesd47f) ?? moisture sensitivity level to - 247ac n/a to - 247ad rohs compliant yes data and specifications subject to change without notice. ir world headquarters: 101n sepulveda blvd, el segundo, california 90245,usa visit us at www.irf.com for sales contact information . ? qualification standards can be found at international rectifiers web site: http://www.irf.com/product - info/reliability/ ?? applicable version of jedec standard at the time of product release.

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