bd544, bd544a, BD544B, bd544c pnp silicon power transistors
1 june 1973 - revised september 2002 specifications are subject to change without notice. designed for complementary use with the bd543 series 70 w at 25c case temperature 8 a continuous collector current 10 a peak collector current customer-specified selections available absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.3 ms, duty cycle 10%. 2. derate linearly to 150c case temperature at the rate of 0.56 w/c. 3. derate linearly to 150c free air temperature at the rate of 16 mw/c. rating symbol value unit collector-base voltage (i e = 0) bd544 bd544a BD544B bd544c v cbo -40 -60 -80 -100 v collector-emitter voltage (i b = 0) bd544 bd544a BD544B bd544c v ceo -40 -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -8 a peak collector current (see note 1) i cm -10 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 70 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 2w operating free air temperat ure r ange t a -65 to +150 c operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
bd544, bd544a, BD544B, bd544c pnp silicon power transistors 2
june 1973 - revised september 2002 specifications are subject to change without notice. notes: 4. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -30 ma (see note 4) i b = 0 bd544 bd544a BD544B bd544c -40 -60 -80 -100 v i ces collector-emitter cut-off current v ce = -40 v v ce = -60 v v ce = -80 v v ce = -100 v v be =0 v be =0 v be =0 v be =0 bd544 bd544a BD544B bd544c -0.4 -0.4 -0.4 -0.4 ma i ceo collector cut-off current v ce = -30 v v ce = -60 v i b =0 i b =0 bd544/544a BD544B/544c -0.7 -0.7 ma i ebo emitter cut-off current v eb = -5 v i c =0 -1 ma h fe forward current transfer ratio v ce = -4 v v ce = -4 v v ce = -4 v i c = -1 a i c = -3 a i c = -5 a (see notes 4 and 5) 60 40 15 v ce(sat) collector-emitter saturation voltage i b = -0.3 a i b = -1 a i b = -1.6 a i c = -3 a i c = -5 a i c = - 8a (see notes 4 and 5) -0.5 -0.5 -1 v v be base-emitter voltage v ce = -4 v i c = -5 a (see notes 4 and 5) -1.4 v h fe small signal forward current transfer ratio v ce = -10 v i c =-0.5a f = 1 khz 20 | h fe | small signal forward current transfer ratio v ce = -10 v i c =-0.5a f = 1 mhz 3 thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.79 c/w r ja junction to free air thermal resistance 62.5 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -6 a v be(off) = 4 v i b(on) = -0.6 a r l = 5 ? i b(off) = 0.6 a t p = 20 s, dc 2% 0.4 s t off turn-off time 0.7 s
bd544, bd544a, BD544B, bd544c pnp silicon power transistors 3
june 1973 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -01 -10 -10 h fe - dc current gain 10 10 100 1000 tcs634ai v ce = -4 v t c = 25c t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs base current i b - base current - a -0001 -001 -01 -10 -10 v ce(sat) - collector-emitter saturation voltage - v -001 -01 -10 -10 tcs634ae i c = -300 ma i c = -1 a i c = -3 a i c = -6 a base-emitter voltage vs collector current i c - collector current - a -01 -10 -10 v be - base-emitter voltage - v -06 -07 -08 -09 -10 -11 -12 tcs634af v ce = -4 v t c = 25c
bd544, bd544a, BD544B, bd544c pnp silicon power transistors 4
june 1973 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -001 -01 -10 -10 sas634af bd544 bd544a BD544B bd544c maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis633ad
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