Part Number Hot Search : 
LC66356B 02330 12MS6 82P604B 48104 06N03 AN829 NTE3091
Product Description
Full Text Search
 

To Download SG30D0 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ims tel (401) 683-9700 fax (401) 683-5571 e-mail: ims@ims-resistors.com http://www.ims-resistors.com international manufacturing services, inc. v series surface mount thick film attenuator on a l l n i mpossible m ade s imple ? ver 2 07/2010 specifications subject to change without notice the v series surface mount thick film on aluminum nitride attenuators are compact, high performance devices especially suited to high power rf and microwave applications. ims design principles assure a proper balance between a well behaved frequency response and optimal thermal performance for our attenuators, whose architecture maximizes allowable dissipated power for the upper db levels. v series part dimensions power rating 1 vgx-2010 0.197? x 0.097? x 0.035? max 20w vgx-3725 0.375? x 0.250? x 0.035? max 90w v series specifications value range: 0db, 1db to 30db standard impedance: 50 nominal vswr (max): 1.6:1 up to 6 ghz 2 dc attenuation stability: .0001 db/ db/ deg. c 3 operating temperature: -55 deg. c to 150 deg. c nominal thermal resistance: 4 ~2.5c/ w (2010), ~0.6c/ w (3725) architecture: thick film on aluminum nitride attachment: solder or epoxy for other impedances, values, substrate thicknesses, sizes or power levels, consult the factory. 1 baseplate maintained at or below 100c 2 mounted in a matched continuous, 50 microstrip system 3 based on tcr and resistor tolerance at dc 4 based on a max power, max film temp. of 150c and baseplate temp. of 100c 5 groundpads must be shorted during assembly proper use of rf principles at the circuit level will allow acceptable thermal and electrical performance up to 10 ghz. attenuation accuracy (dc) increment accuracy (db) 0, 1 - 3 +/- 0.2db 3.5 - 13 +/- 0.3db 13.5 - 30 +/- 0.5db prefix for a l n attenuators termination metallization: 3 - ptag c - ptag w/ solder db increment (d0 denotes whole value) -or- (d5 denotes whole value + .5db, available up to 16.5db) note: 0.5db unavailable db whole value (00-30) termination style: wa - wraparound sg - single wrap to ground case size: 2010 3725 wa style input / output input / output wraps t o groundpad back of chip sugg ested footprint 5 gro undpad gro undpad input / output input / output substrate thickness: g - 0.025? sample p/n: v g 3 - 2010 wa 02 d5 ordering information to 30db to 0.2db accuracy to 90w rated power gro undpad suggested footprint 5 back of chip input / output input / output wra ps to groundpad gro undpad sg style


▲Up To Search▲   

 
Price & Availability of SG30D0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X