vishay tsts710. document number 81047 rev. 1.4, 11-may-04 vishay semiconductors www.vishay.com 1 94 8483 gaas ir emitting diodes in hermetically sealed to-18 case description tsts710. series are infrared emitting diodes in stan- dard gaas technology in a hermetically sealed to-18 package. their glass lenses provide a very high radi- ant intensity without external optics. features ? very high radiant intensity suitable for pulse operation narrow angle of half intensity ? = 5 peak wavelength p = 950 nm high reliability good spectral matching to si photodetectors lead-free device applications radiation source in near infrared range absolute maximum ratings t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit reverse voltage v r 5v forward current t case 25 c i f 250 ma peak forward current t p /t = 0.5, t p 100 s, t case 25 c i fm 500 ma surge forward current t p 100 si fsm 2.5 a power dissipation p v 170 mw t case 25 c p v 500 mw junction temperature t j 100 c storage temperature range t stg - 55 to + 100 c thermal resistance junction/ ambient r thja 450 k/w thermal resistance junction/ case r thjc 150 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 100 ma, t p 20 ms v f 1.3 1.7 v breakdown voltage i r = 100 av (br) 5v junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 30 pf
www.vishay.com 2 document number 81047 rev. 1.4, 11-may-04 vishay tsts710. vishay semiconductors optical characteristics t amb = 25 c, unless otherwise specified type dedicated characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit radiant power i f = 100 ma, t p 20 ms e 7mw temp. coefficient of e i f = 100 ma tk e - 0.8 %/k angle of half intensity ? 5 deg peak wavelength i f = 100 ma p 950 nm spectral bandwidth i f = 100 ma ? 50 nm rise time i f = 1.5 a, t p /t = 0.01, t p 10 st r 400 ns fall time i f = 1.5 a, t p /t = 0.01, t p 10 st f 400 ns virtual source diameter ? 1.5 mm parameter test condition symbol min ty p. max unit radiant intensity i f = 100 ma, t p = 20 ms i e 10 50 mw/sr i e 12.5 25 mw/sr i e 20 40 mw/sr i e 32 64 mw/sr figure 1. power dissipation vs. ambient temperature 0255075100 0 200 400 600 p - power dissipation ( mw ) v 125 94 8017 r thja 100 300 500 r thjc t amb - ambient temperature ( c) figure 2. forward current vs. ambient temperature 020406080 0 50 100 150 200 300 i ? forward current ( ma) f t amb ? ambient temperature ( c ) 100 94 8018 r thjc 250 r thja
vishay tsts710. document number 81047 rev. 1.4, 11-may-04 vishay semiconductors www.vishay.com 3 figure 3. pulse forward current vs. pulse duration figure 4. forward current vs. forward voltage figure 5. relative forward voltage vs. ambient temperature t p - pulse duration ( ms ) 94 8003 10 0 10 1 10 1 10 -1 10 -1 10 0 10 2 10 -2 t p /t= 0.01 i fsm = 2.5 a ( single pulse ) 0.05 0.1 0.2 0.5 i - forward curren t(a) f 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i - forward current ( ma ) f 4 3 2 1 0 v f - forward voltag e(v) 0.7 0.8 0.9 1.0 1.1 1.2 v - relative forward voltage frel 94 7990 i f =10ma t amb - ambient temperature ( c) 100 80 60 40 20 0 figure 6. radiant intensity vs. forward current figure 7. radiant power vs. forward current figure 8. rel. radiant intensity/power vs. ambient temperature 94 8001 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f ? forward current ( ma ) i ? radiant intensity ( mw/sr ) e tsts 7101 tsts 7102 tsts 7103 t p /t=0.01,t p =20 s ? radiant power ( mw ) e i f ? forward current ( ma ) 94 7977 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 -10 10 50 0 100 0 0.4 0.8 1.2 1.6 i; e rel e rel 140 94 7993 i f =20ma t amb - ambient temperature ( c)
www.vishay.com 4 document number 81047 rev. 1.4, 11-may-04 vishay tsts710. vishay semiconductors figure 9. relative radiant power vs. wavelength figure 10. relative radiant in tensity vs. angular displacement 900 950 0 0.25 0.5 0.75 1.0 1.25 - wavelength ( nm ) 1000 94 7994 - relative radiant power ? i f = 100 ma e rel 0.4 0.2 0 0.2 0.4 i ? relative radiant intensity e rel 0.6 94 8019 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0
vishay tsts710. document number 81047 rev. 1.4, 11-may-04 vishay semiconductors www.vishay.com 5 package dimensions in mm 14486
www.vishay.com 6 document number 81047 rev. 1.4, 11-may-04 vishay tsts710. vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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