?2002 fairchild semiconductor corporation january 2002 isl9v3040d3s / isl9v3040s3s / isl9v 3040p3 rev. c, february 2002 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 ecospark tm 300mj , 400v, n-channel ignition igbt general description the isl9v3040d3s, isl9v3040s3s, and isl9v3040p3 are the next generation ignition igbts that offer outstanding scis capability in the space saving d-pak (to-252), as well as the industry standard d2-pak (to-263), and to-220 plastic packages. this device is intended for use in automotive ignition circuits, specifically as a coil driver. internal diodes provide voltage clamping without the need for external components. ecospark? devices can be custom made to spe cific clamp voltages. contact your nearest fairchild sales office for more information. formerly developmental type 49362 applications automotive ignition coil driver circuits coil- on plug applications features space saving d-pak package ava ilability scis energy = 300mj at t j = 25 o c logic level gate drive device maximum ratings t a = 25c unless otherwise noted symbol parameter ratings units bv cer collector to emitter breakdown voltage (i c = 1 ma) 430 v bv ecs emitter to collector voltage - reverse battery condition (i c = 10 ma) 24 v e scis25 at starting t j = 25c, i scis = 14.2a, l = 3.0 mhy 300 mj e scis150 at starting t j = 150c, i scis = 10.6a, l = 3.0 mhy 170 mj i c25 collector current continuous, at t c = 25c, see fig 9 21 a i c110 collector current continuous, at t c = 110c, see fig 9 17 a v gem gate to emitter voltage continuous 10 v p d power dissipation total t c = 25c 150 w power dissipation derating t c > 25c 1.0 w/c t j operating junction temperature range -40 to 175 c t stg storage junction temperat ure range -40 to 175 c t l max lead temp for soldering (leads at 1.6mm from case for 10s) 300 c t pkg max lead temp for soldering (package body for 10s) 260 c esd electrostatic di scharge volt age at 100pf, 1500 ? 4kv package gate collector emitter r 2 r 1 symbol jedec to-252aa collector (flange) d-pak d2-pak jedec to-263ab collector (flange) jedec to-220ab e g e g
?2002 fairchild semiconductor corporation isl9v3040d3s / isl9v3040s3s / isl9v3040p3 rev.c, february 2002 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 package marking and ordering information electrical characteristics t a = 25c unless otherwise noted off state characteristics on state characteristics dynamic characteristics switching characteristics thermal characteristics device marking device package reel size tape width quantity v3040d isl9v3040d3st to-252aa 330mm 16mm 2500 units v3040s isl9v3040s3st to-263ab 330mm 24mm 800 units v3040d isl9v3040d3s to-252aa tube n/a 75 units v3040s isl9v3040s3s to-263ab tube n/a 50 units v3040p isl9v3040p3 to-220ab tube n/a 50 units symbol parameter test conditions min typ max units bv cer collector to emitter breakdown voltage i c = 2ma, v ge = 0, r g = 1k ?, see fig. 15 t j = -40 to 150c 370 400 430 v bv ces collector to emitter breakdown voltage i c = 10ma, v ge = 0, r g = 0 , see fig. 15 t j = -40 to 150c 390 420 450 v bv ecs emitter to collector breakdown voltage i c = -75ma, v ge = 0v, t c = 25c 30 - - v bv ges gate to emitter breakdown voltage i ges = 2ma 12 14 - v i cer collector to emitter leakage current v cer = 250v, r g = 1k ?, see fig. 11 t c = 25c - - 25 a t c = 150c - - 1 ma i ecs emitter to collector leakage current v ec = 24v, see fig. 11 t c = 25c - - 1 ma t c = 150c - - 40 ma r 1 series gate resistance - 70 - ? r 2 gate to emitter resistance 10k - 26k ? v ce(sat) collector to emitter saturation voltage i c = 6a, v ge = 4v t c = 25c, see fig. 3 - 1.25 1.60 v v ce(sat) collector to emitter saturation voltage i c = 10a, v ge = 4.5v t c = 150c, see fig. 4 - 1.58 1.80 v v ce(sat) collector to emitter saturation voltage i c = 15a, v ge = 4.5v t c = 150c - 1.90 2.20 v q g(on) gate charge i c = 10a, v ce = 12v, v ge = 5v, see fig. 14 -17-nc v ge(th) gate to emitter threshold voltage i c = 1.0ma, v ce = v ge, see fig. 10 t c = 25c 1.3 - 2.2 v t c = 150c 0.75 - 1.8 v v gep gate to emitter plateau voltage i c = 10a, v ce = 12v - 3.0 - v t d(on)r current turn-on delay time-resistive v ce = 14v, r l = 1 ?, v ge = 5v, r g = 1k ? t j = 25c, see fig. 12 -0.74s t rr current rise time-resistive - 2.1 7 s t d(off)l current turn-off delay time-inductive v ce = 300v, l = 500hy , v ge = 5v, r g = 1k ? t j = 25c, see fig. 12 - 4.8 15 s t fl current fall time-inductive - 2.8 15 s scis self clamped inductive switching t j = 25c, l = 3.0 mhy, r g = 1k ?, v ge = 5v, see fig. 1 & 2 - - 300 mj r jc thermal resistance junction-case to-252, to-263, to-220 - - 1.0 c/w
?2002 fairchild semiconductor corporation isl9v3040d3s / isl9v3040s3s / isl9v3040p3 rev.c, february 2002 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 typical perfo rmance curves (continued) figure 1. self clamped inductive switching current vs time in clamp figure 2. self clamped inductive switching current vs inductance figure 3. collector to emitter on-state voltage vs junction temperature figure 4. collector to emitter on-state voltage vs junction temperature figure 5. collector to emitter on-state voltage vs collector current figure 6. collector to emitter on-state voltage vs collector current t clp , time in clamp (s) i scis , inductive switching current (a) 25 15 5 30 20 10 0 r g = 1k ? , v ge = 5v,v dd = 14v 200 175 150 0125 50 25 75 100 t j = 25c t j = 150c scis curves valid for v clamp voltages of <430v 25 15 5 30 20 10 0 i scis , inductive switching current (a) 010 2468 t j = 25c t j = 150c l, induct ance (mhy) r g = 1k ? , v ge = 5v,v dd = 14v scis curves valid for v clamp voltages of <430v 1.30 1.26 1.22 1.18 1.14 -75 25 -25 175 125 75 -50 0 50 100 150 t j , junction temperature (c) v ce , collector to emitter voltage (v) v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce = 6a -75 25 -25 175 125 75 -50 0 50 100 150 1.8 1.7 1.6 1.5 1.4 t j , junction temperature (c) v ce , collector to emitter voltage (v) i ce = 10a 1.3 1.2 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 0 10 02.0 1.0 3.0 4.0 25 15 5 t j = - 40c v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = 25c i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 20 10 0 25 15 5 02.0 1.0 3.0 4.0
?2002 fairchild semiconductor corporation isl9v3040d3s / isl9v3040s3s / isl9v3040p3 rev.c, february 2002 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 typical perfo rmance curves (continued) figure 7. collector to emitter on-state voltage vs collector current figure 8. transfer characteristics figure 9. dc collector current vs case temperature figure 10. threshold voltage vs junction temperature figure 11. leakage current vs junction temperature figure 12. switching time vs junct ion temperature i ce , collector to emitter current (a) v ce , collector to emitter voltage (v) 25 15 5 0 20 10 02.0 1.0 3.0 4.0 v ge = 4.0v v ge = 3.7v v ge = 4.5v v ge = 5.0v v ge = 8.0v t j = 175c i ce , collector to emitter current (a) v ge , gate to emitter voltage (v) 2.0 1.0 3.0 4.0 25 15 5 0 20 10 pulse duration = 250s duty cycle < 0.5%, v ce = 5v t j = 25c t j = 150c 2.5 1.5 3.5 4.5 t j = -40c i ce , dc collector current (a) t c , case temperature (c) 25 25 175 125 75 50 100 150 20 15 10 5 0 v ge = 4.0v 2.2 17 5 50 100 2.0 1.8 1.6 1.4 1.0 v ce = v ge v th , threshold voltage (v) t j junction temperature (c) 150 0 -50 125 75 25 -25 1.2 i ce = 1ma leakage current (a) t j , junction temperature (c) 1000 10 0.1 10000 100 1 25 -25 175 125 75 -50 0 50 100 150 v ces = 250v v ecs = 24v v ces = 300v 25 17 5 125 75 50 100 150 t j , junction temperature (c) switching time (s) 12 10 8 6 4 2 i ce = 6.5a, v ge = 5v, r g = 1k ? resistive t off inductive t off resistive t on
?2002 fairchild semiconductor corporation isl9v3040d3s / isl9v3040s3s / isl9v3040p3 rev.c, february 2002 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 typical performance curves (continued) figure 13. capacitance vs collector to emitter voltage figure 14. gate charge figure 15. breakdown voltage vs series gate resistance figure 16. igbt normalized transient thermal impedance, junction to case c, capacitance (pf) v ce , collector to emitter voltage (v) 1600 800 400 1200 010 5152025 0 c ies c oes c res frequency = 1 mhz q g , gate charge (nc) v ge , gate to emitter voltage (v) 0 2 4 8 0 4 8 1216202428 3 5 7 6 1 32 i g(ref) = 1ma, r l = 1.25 ?, t j = 25c v ce = 6v v ce = 12v bv cer , breakdown voltage (v) r g , series gate resistance (k ? ) 430 410 400 420 10 2000 1000 3000 390 100 415 405 425 395 t j = - 40c t j = 25c t j = 175c i cer = 10ma z thjc , normalized thermal response t 1 , rectangular pulse duration (s) 10 0 10 -2 10 -1 10 -1 10 -2 10 -3 10 -4 10 0 duty factor, d = t 1 / t 2 peak t j = (p d x z jc x r jc ) + t c t 1 t 2 p d 10 -5 0.5 0.2 0.1 0.05 0.02 0.01 single pulse
?2002 fairchild semiconductor corporation isl9v3040d3s / isl9v3040s3s / isl9v3040p3 rev.c, february 2002 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 test circuit and waveforms figure 17. inductive switching test circuit figure 18. t on and t off switching test circuit figure 19. unclamped energy test circuit figure 20. unclamped energy waveforms r g g c e v ce l pulse gen dut r g = 1k ? + - v ce dut 5v c g e load r or l t p v ge 0.01 ? l i as + - v ce v dd r g vary t p to obtain required peak i as 0v dut g c e v dd v ce bv ces t p i as t av 0
?2002 fairchild semiconductor corporation isl9v3040d3s / isl9v3040s3s / isl9v3040p3 rev.c, february 2002 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 spice thermal model rev 25 may 2001 isl9v3040d3s / isl9v3040s3s / isl9v3040p3 ctherm1 th 6 2.5e -4 ctherm2 6 5 2.5e -3 ctherm3 5 4 1.6e -3 ctherm4 4 3 1.3e -2 ctherm5 3 2 6.1e -3 ctherm6 2 tl 9.9e +2 rtherm1 th 6 1.2e -1 rtherm2 6 5 1.9e -1 rtherm3 5 4 2.2e -1 rtherm4 4 3 6.0e -2 rtherm5 3 2 5.8e -2 rtherm6 2 tl 1.6e -4 saber thermal model saber thermal model isl9v3040d3s / isl9v3040s3s / isl9v3040p3 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 6 = 2.5e -4 ctherm.ctherm2 6 5 = 2.5e -3 ctherm.ctherm3 5 4 = 1.6e -3 ctherm.ctherm4 4 3 = 1.3e -2 ctherm.ctherm5 3 2 =6.1e -3 ctherm.ctherm6 2 tl = 9.9e +2 rtherm.rtherm1 th 6 = 1.2e -1 rtherm.rtherm2 6 5 = 1.9e -1 rtherm.rtherm3 5 4 = 2.2e -1 rtherm.rtherm4 4 3 = 6.0e -2 rtherm.rtherm5 3 2 = 5.8e -2 rtherm.rtherm6 2 tl = 1.6e -4 } rtherm4 rtherm6 rtherm5 rtherm3 rtherm2 rtherm1 ctherm4 ctherm6 ctherm5 ctherm3 ctherm2 ctherm1 tl 2 3 4 5 6 th junction case
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