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n - chanel power mosfet 1 ana4N60B, anp4N60B, anb4N60B, and4N60B, ani4N60B, anu4N60B rdson= 2,2 ? ? smps ? pfc features ? low qg ? low rdson ? rohs compliant table 1. device summary part numbers marking package packaging an a 4 n 60 b a 4 n 6 0 b to - 220fp tube an p 4 n 6 0 b p 4 n 6 0 b to - 220 tube an b 4 n 6 0 b b 4 n 6 0 b d2pak tape and reel an d 4 n 6 0 b d 4 n 6 0 b d pak tape and reel an i 4 n 6 0 b i 4 n 6 0 b i 2 pak tube an u 4 n 6 0 b u4 n 6 0 b i pak tube table 2 . absolute maximum ratings symbol parame ter value unit s to - 220fp to - 220 d2pak i 2 pak d pak i pak i d drain current (continuous), v gs = at t c = 25c 4 a i d drain current (continuous), v gs = at t c = 100c 2,5 a i d m(1) drain current (pulsed) at t c = 25c 16 a v g s gate - source voltage 2 0 v p d maximum power dissipation at tc = 25c 25 70 w maximum power dissipation at tc = 100c D w t stg storage temperature - 55 +150 c t j operating junction temperature - 55 +150 t l soldering temperature, for 10 sec. 260 mounting torque, 6 - 32 or m3 screw 1, 13 D nm table 3 . thermal resistance symbol parameter value value to - 220fp to - 220 d2pak i 2 pak d pak i pak r thj - case thermal resistance junction - case max 5 1,78 c/w r thj - amb thermal resistance junction - ambient max 62,5 100 c/w 1 2 3 gate drain source free datasheet http://
n - chanel power mosfet 2 table 4 . electrical characteristics of the mosfet symbol parameter min. typ. max. unit s conditions ref . fig off characteristics v (br) dss drain - to - source breakdown voltage 60 0 v i d = 1 ma, v gs = 0 ? v (br) dss / ? t j temperature coefficient of breakdown voltage D v/c i dss zero gate voltage drain current 10 a i gss gate to body leakage current 100 n a v gs = 20v on characteristics v g s (th) gate threshold voltage 3 , 0 4 , 5 v v ds = v gs , i d = 50a ? v g s (th) / ? t j threshold voltage temp. coefficient D m v/c r ds ( on ) static drain to source on resistance 2,2 ? v gs = 10v, i d = 2 a g f s forward transconductance 3 s v ds = 15 v , i d = 2 a dynamic characteristics c i s s input capacitance 510 pf v ds = 25v, f = 1 mhz, v gs = 0 c o s s output capacitance 67 pf c r s s reverse transfer capacitance 13 pf q g(tot) total gate charge 12 nc v dd = 480v, i d = 4 a, v gs = 10v q gs gate to source gate charge 3,8 nc q gd gate to drain miller charge 9,8 nc switching characteristics t d(on) turn - on de lay time 12 ns v dd = 300 v, i d = 2 a r g = 4.7 ?? v gs = 10 v t r rise time 9,5 ns t d(off) turn - off delay time 29 ns t f fall time 16,5 ns table 5 . avalanche characteristic symbol parameter typ. max. unit s conditions ref.fig e as single pulse avalanche energy 12 0 mj e ar repetitive ava lanche energy D mj v ds(avalanche) repetitive avalanche voltage D v i a r avalanche current 4 a table 6 . source drain diode symbol parameter min. typ. max. unit s conditions ref.fig v sd diode forward voltage 1, 6 v i sd = 4 a, v gs = 0 i s contin uous source current (body diode) 4 a i sm pulsed source current (body diode) 16 a t rr reverse recovery time 400 ns i sd = 4 a, di/dt = 100a/ s v dd = 24v, t j = 150c q rr reverse recovery charge 1700 nc free datasheet http://
n - chanel power mosfet 3 free datasheet http://
n - chanel power mosfet 4 free datasheet http://
n - chanel power mosfet 5 free datasheet http://
n - chanel power mosfet 6 to - 220fp free datasheet http://
n - chanel power mosfet 7 to - 220 free datasheet http://
n - chanel power mosfet 8 d 2 pak free datasheet http://
n - chanel power mosfet 9 dpak free datasheet http://
n - chanel power mosfet 10 i 2 pak free datasheet http://
n - chanel power mosfet 11 ipak proezd 4806, bld 4/3, zelenograd, moscow, russia, 124460 tel: +7(499)731 - 4906; +7(499)731 - 3270; fax: +7(400)731 - 1508 e - mail: market@angstrem.ru; web: www.angstrem.ru free datasheet http://

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