20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BTX18-100/btx18-200/btx18-300 btx18-400/btx18-500 anode to cathode - ratings voltage 1) currents silicon thyristors symbol vr vrwm vrrm vrsm vdwm vd vdrm vdsm ratings continuous reverse voltage crest working reverse voltage repetitive peak reverse voltage (5 = 0.01 ; f=50hz) non-repetitive peak reverse voltage (t<10ms) crest working off-state voltage continuous off-state voltage repetitive peak off-state voltage (8 = 0.01 ; f=50hz) non-repetitive peak off-state voltage (t<10ms) btx18- 100 100 100 120 120 100 100 120 120 btx18- 200 200 200 240 240 200 200 240 240 btx18- 300 300 300 350 350 300 300 350 350 btx18- 400 400 400 500 500 400 400 500 500 btx18- 500 500 500 600 600 500 500 600 600 v v v v v v v2) v2) symbol ij(av) it it(rms) ratings average on-state current (averaged over any 20 ms period) on-state current (d.c.) tcase=100c rms on-state current tcase=105c tamb=60c, in free air btx18- btx18- btx18- btx18- 100 200 300 400 max: 1.0 max : 250 max : 1 .6 max : 1 .6 btx18- 500 a ma a a ?sp?. nj .semi-condiwtori reserves the righl lo change test condition*, parameter limits ;uid package dimensions without notice information liimidwd by nj sr omissions jiso)v?red in its use nj senii-coiidimurs cncourasies ? .ii-;k nicrs tnvcpil'\i il:iiashccts ;ire i urrcnt before pine ing unto* m
symbol itrm itsm tj tsta ratings repetitive peak on-state current non-repetitive peak on-state current t=10ms ; tj=125c prior to surge junction temperature storage temperature btx18- btx18- 100 200 btx18- 300 btx18- 400 btx18- 500 max: 10 10a max : 125c -55to+125c a v c 1) these ratings apply for zero or negative bias on the gate with respect to the cathode, and when a resistor r<1 kii is connected between gate and cathode 2) the device is not suitable for operation in the forward breakover mode. gate to cathode - ratings with 11 resistor between gate and cathode symbol vfgm vrgm ifgm pg pgm ratings forward peak voltage reverse peak voltage forward peak current average power dissipation (averaged over any 20 ms period) peak power dissipation btx18 btx18 -100 -200 btx18 -300 max : 10 btx18 -400 v btx18 -500 max : 5 v max : 0.2 max : 0.05 max : 0.5 v v a w w temperatures symbol r?i j-c rth j-a zthj-c ratings from junction to case from junction to ambient transient thermal resistance (t=10 ms) btx18 btx18 btx18 -100 -200 -300 btx18 -400 btx18 -500 10 200 2.5 c/w c/w c/w anode to cathode - characteristics symbol vt ratings on state voltage ! it=1 .0 a, ti=25c i btx18 -100 1.5 btx18 -200 1.5 btx18 -300 1.5 btx18 -400 1.5 btx18 -500 1.5 v1)
symbol irm 'dm il ih ratings peak reverse current < vrm=vrwmax i tj=125c i peak off-state current j vdm=vowmax i tj=125c i latching current, tj=125c holding current ; t,=25c j < btx18 -100 800 800 btx18 -200 400 400 btx18 -300 275 275 btx18 -400 200 200 btx18 -500 160 160 typ: 10 5.0 2) ha ha ma ma gate to cathode - characteristics symbol vgt vgd igt ratings voltage that will trigger all devices tj=25c voltage that will not trigger any device ti=125c > < current that vill trigger all devices i ti=25c | btx18 btx18 btx18 -100 -200 -300 btx18 -400 btx18 -500 2.0 200 5.0 v mv ma switching characteristics symbol ratings i i turn off time when switched from tr25 c i it=300 ma to ir=1 75 ma i? "'""'""" ' 1 ^ |ti=125c | i dm peak off-state current < vdm=vdwitox ; tj=125c btx18 -100 btx18 -200 btx18 -300 btx18 -400 btx18 -500 type : 20 typ : 35 800 400 275 200 160 |1s us 1) vtis measured along the leads at 1 cm from the case 2) measurer under the following conditiond : anode sypply voltage= +6.0v initial on-state current after gate triggering= 50ma the current is reduced until the device turns of.
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