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| RB063L-30 diodes schottky barrier diode RB063L-30 z z z z applications high frequency rectification for switching power supply z z z z features 1) compact power mold type. (pmds) 2) ultra low v f / low i r . 3) v rm =30v guaranteed. z z z z construction silicon epitaxial planar z z z z external dimensions (units : mm) 0.1 cathode mark 4.50.2 2.60.2 2.00.2 1.20.3 1.50.2 55 5.00.3 + 0.02 ? 0.1 rohm : pmds eiaj : ? jedec : sod-106 date of manufacture ex. 1999.12 9, c z z z z absolute maximum ratings (ta=25 c) parameter symbol v rm limits 30 unit v peak reverse voltage v r 30 v dc reverse voltage i o 2a mean rectifying current ? i fsm 70 a tj 125 c junction temperature tstg ? 40 + 125 c storage temperature ? 180 half sine wave when mounted on glass epoxy pcbs. peak forward surge current (60hz1 ) z z z z electrical characteristics (ta=25 c) parameter forward voltage reverse current symbol min. typ. max. unit conditions v f i r ? ? ? ? 0.395 200 v a i f =2.0a v r =30v
RB063L-30 diodes z z z z electrical characteristic curves (ta=25 c) forward current : i f (a) forward voltage : v f (v) fig.1 forward characteristics 0 0.2 0.3 0.4 0.5 0.1 1m 100m 10m 10 1 ta = 125 c ta = 75 c ta = 25 c reverse current : i r (a) reverse voltage : v r (v) fig.2 reverse characteristics 0203040 10 1 10 1m 100 100m 10m ta = 125 c ta = 75 c ta = 25 c terminal capacitance : c t ( pf) reverse voltage : v r (v) fig.3 capacitance between terminals characteristics 0102030 100 1000 average rectified forward current : i o (a) ambient temperature : ta ( c ) fig.4 derating curve (i o - ta) (when mounted on alumina pcbs) 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 sine d = 0.3 d = 0.2 d = 0.5 d = 0.8 d = 0.1 d = 0.05 dc tp t d = tp / t v r = v rm / 2 i f i o average rectified forward current : i o (a) lead temperature : t l ( c ) fig.5 derating curve (i o - t l ) (when mounted on alumina pcbs) 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 d = 0.8 d = 0.5 sine d = 0.3 d = 0.2 d = 0.1 d = 0.05 dc tp t d = tp / t v r = v rm / 2 i o i f 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.4 0.2 0.6 0.8 1.0 1.2 1.4 forward power dissipation : p f ( w) average rectified forward current : i o (a) d = 0.05 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0.8 dc tp t d = tp / t tj = tj max. i f i o sine fig.6 forward power dissipation characteristics reverse power dissipation : p r ( w) reverse voltage : v r ( v) fig.7 reverse power dissipation characteristics 0 0 2 4 6 8 101214161820 0.05 0.10 0.15 0.20 0.30 0.25 d = 0.8 sine v r v r 0 tp t tj = tj max. tj = tj max. d = tp / t dc d = 0.05 d = 0.1 d = 0.2 d = 0.3 d = 0.5 average rectified forward current : i o (a) ambient temperature : ta ( c) fig.8 derating curve (i o - ta) (when mounted on glass epoxy pcbs) 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 d = 0.8 d = 0.5 sine d = 0.3 d = 0.2 d = 0.1 d = 0.05 dc tp t d = tp / t v r = v rm / 2 i f i o |
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