1 12/13/01 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. bv dsx /r ds(on) i dss bv dgx (max) (min) to-92 to-243aa* 300v 12 ? 200ma dn2530n3 dn2530n8 dn2530 advanced dmos technology not recommended for new designs. please use dn3535 or dn3545 instead. these depletion-mode (normally-on) transistors utilize an ad- vanced vertical dmos structure and supertex?s well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transis- tors and with the high input impedance and positive temperature coefficient inherent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertex?s vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. ordering information features ? high input impedance ? low input capacitance ? fast switching speeds ? low on resistance ? free from secondary breakdown ? low input and output leakage applications ? normally-on switches ? solid state relays ? converters ? linear amplifiers ? constant current sources ? power supply circuits ? telecom absolute maximum ratings drain-to-source voltage bv dsx drain-to-gate voltage bv dgx gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. package options order number / package * same as sot-89. product shipped on 2000 piece carrier tape reels. n-channel depletion-mode v ertical dmos fets note : see package outline section for dimensions. product marking for to-243aa: dn5t ? where ? = 2-week alpha date code t o-243aa (sot-89) g d s d t o-92 s g d
2 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 0v v dd r gen 0v -10v symbol parameter min typ max unit conditions bv dsx drain-to-source 300 v v gs = -5v, i d = 100 a breakdown voltage v gs(off) gate-to-source off voltage ?1.0 ?3.5 v v ds = 25v, i d = 10 a ? v gs(off) change in v gs(off) with temperature 4.5 mv/ cv ds = 25v, i d = 10 a i gss gate body leakage current 100 na v gs = 20v, v ds = 0v i d(off) drain-to-source leakage current 10 av gs = -10v, v ds = max rating 1mav gs = -10v, v ds = 0.8 max rating t a = 125 c i dss saturated drain-to-source current 200 ma v gs = 0v, v ds = 25v r ds(on) static drain-to-source 12 ? v gs = 0v, i d = 150ma on-state resistance ? r ds(on) change in r ds(on) with temperature 1.1 %/ cv gs = 0v, i d = 150ma g fs forward transconductance 300 m i d = 150ma, v ds = 10v c iss input capacitance 300 v gs = -10v, v ds = 25v c oss common source output capacitance 30 pf f = 1 mhz c rss reverse transfer capacitance 5 t d(on) turn-on delay time 10 v dd = 25v, t r rise time 15 ns i d = 150ma, t d(off) turn-off delay time 15 r gen = 25 ? t f fall time 20 v sd diode forward voltage drop 1.8 v v gs = -10v, i sd = 150ma t rr reverse recovery time 600 ns v gs = -10v, i sd = 1a notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. package i d (continuous)* i d (pulsed) power dissipation jc ja i dr *i drm @ t a = 25 c c/w c/w to-92 175ma 500ma 0.74w 125 170 175ma 500ma to-243aa 200ma 500ma 1.6 ? 15 78 ? 200ma 500ma * i d (continuous) is limited by max rated t j . ? mounted on fr4 board, 25mm x 25mm x 1.57mm. significant p d increase possible on ceramic substrate. electrical characteristics (@ 25 c unless otherwise specified) dn2530 thermal characteristics switching waveforms and test circuit ?
3 t ypical performance curves output characteristics 1.0 0.8 0.6 0.4 0.2 0 050 100 150 200 250 v ds (volts) i d (amperes) transconductance vs. drain current i d (amperes) power dissipation vs. case temperature 0 150 100 50 125 75 25 to-92 to-243aa v gs = 1.0v 0.5v -0.5v -1.0v -1.5v 0v saturation characteristics 0.25 0.2 0.15 0.1 0.05 0 2.0 1.6 1.2 0.8 0.4 0 0123 5 4 v gs = 1.0v -1.5v 0.5v 0v -0.5v -1.0v maximum rated safe operating area 1 1000 100 10 1 0.1 0.01 0.001 v ds (volts) i d (amperes) to-92 (pulsed) t c = 25 c to-92 (dc) thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 t p (seconds) 0 to-243aa t a = 25 c p d = 1.6w 0.5 0.4 0.3 0.2 0.1 0 0 0.25 0.05 0.1 0.15 0.2 v ds = 10v t a = -55 c t a = 25 c t a = 125 c to-92 t c = 25 c p d = 1.0w i d (amperes) v ds (volts) g fs (siemens) t c ( c) p d (watts) dn2530
4 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 744-0100 ? fax: (408) 222-4895 www.supertex.com 12/13/01 ?2001 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. bv dss variation with temperature bv dss (normalized) 1.1 1.05 1.0 0.95 0.9 0.85 -50 0 0.2 0.4 0.6 0.8 1.0 0 50 100 150 transfer characteristics t j ( c) v gs (volts) v ds (volts) i d (amperes) 1.0 0.8 0.6 0.4 0.2 0 -2 -1 0 12 capacitance vs. drain-to-source voltage c (picofarads) 200 150 100 50 0 010 20 30 40 v gs = -5v i d = 100 a v gs = 0v v ds = 10v v gs = -10v c oss c rss c iss t a = -55 c t a = 25 c r ds (on) @ i d = 150ma v gs(off) @ 10 a v ds = 40v t a = 125 c on-resistance vs. drain current 50 40 30 20 10 0 i d (amps) q c (nanocoulombs) r ds(on) (ohms) -50 0 50 100 150 012345 v gs (off) and r ds variation with temperature 2.5 2 1.5 1 0.5 0 15 10 5 0 -5 t j ( c) v gs(th) (normalized) gate drive dynamic characteristics v gs (volts) v ds = 20v 250pf 152pf t ypical performance curves dn2530
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