rev. d 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 1 of 2 www. sem icoa .com 2n5153l silicon pnp transisto r data sheet description sem i coa sem i conductors offers: ? screening and processing per mil-prf-19500 appendi x e ? jan level (2n5153lj) ? jantx level (2n5153ljx) ? jantxv level (2N5153LJV) ? jans level (2n5153ljs) ? qci to the applicable level ? 100% die visual inspection per mil-std-750 m e thod 2072 for jantxv and jans ? radiation testing (total dose) upon request please contact sem i coa for speci al confi gurat i ons www. semicoa .com or (714) 979-1900 applications ? hi gh-speed power swi t c hi ng ? low power ? pnp silico n tran sisto r features ? herm etically sealed to-5 m e tal can ? al so avai l a bl e i n chi p confi gurat i on ? c h i p geom et ry 9702 ? r e ference docum ent : m i l-pr f-19500/ 545 benefits ? qu alificatio n lev e ls: jan, jantx, jantxv and jans ? r a di at i on t e st i ng avai l a bl e absolute maximum ratings t c = 2 5 c u n l ess o t h e rw ise sp ecified parameter sy mbol rating unit co llecto r-em itter vo ltag e v ceo 80 vo lts collector-base voltage v cbo 100 vo lts em itter-base vo ltag e v ebo 5.5 vo lts c o l l ect or c u rrent , c ont i nuous i c 2 a power di ssi pat i on, t a = 25 o c derat e l i n earl y above 25 o c p t 1 5.7 w mw / c power di ssi pat i on, t c = 25 o c derat e l i n earl y above 25 o c p t 11.8 66.7 w mw / c therm a l resistance r ja r jc 175 15 c/w operat i ng junct i on tem p erat ure storage tem p erature t j t stg -65 t o +200 -65 t o +200 c semicoa corporation copy right ? 20 10
rev. d 333 mccormick avenue, costa mesa, california 92626 714.979.1900, fax 714.557.4541 page 2 of 2 www. sem icoa .com 2n5153l silicon pnp transisto r data sheet electrical characteristics characteristics specified at t a = 2 5 c off characteristics parameter sy mbol test conditions min ty p max units collector-em itter breakdown voltage v (br)ceo i c = 100 m a 80 vo lts co llecto r-em itter cu to ff cu rren t i ces1 v ce = 60 vol t s 1 a co llecto r-em itter cu to ff cu rren t i ces2 v ce = 100 vol t s 1 ma co llecto r-em itter cu to ff cu rren t i ceo v ce = 40 vol t s 50 a co llecto r-em itter cu to ff cu rren t i cex v ce = 60 vol t s , v eb = 2 vo lts, t a = 150 c 500 na em itter-base cu to ff cu rren t i ebo1 v eb = 4 vol t s 1 a em itter-base cu to ff cu rren t i ebo1 v eb = 5.5 vol t s 1 ma on characteristics pulse test: pulse width = 300 s, duty cy cle 2.0% parameter sy mbol test conditions min ty p max units dc current gain h fe1 h fe2 h fe3 h fe4 i c = 50 m a , v ce = 5 vo lts i c = 2.5 a, v ce = 5 vo lts i c = 5 a, v ce = 5 vo lts i c = 2.5 a, v ce = 5 vo lts t a = -55 c 50 70 40 25 200 base-em itter vo ltag e v be v ce = 5 vo lts, i c = 2.5 m a 1.45 vo lts base-em itter satu ratio n vo ltag e v besat1 v besat2 i c = 2.5 a, i b = 250 m a i c = 5 a, i b = 500 m a 1.45 2.20 vo lts co llecto r-em itter satu ratio n vo ltag e v cesat1 v cesat2 i c = 2.5 a, i b = 250 m a i c = 5 a, i b = 500 m a 0.75 1.50 vo lts dy namic characteristics parameter sy mbol test conditions min ty p max units mag n itu d e ? co m m o n em itter, sh o r t circuit forward curre nt transfer ratio |h fe | v ce = 5 vo lts, i c = 500 m a , f = 10 m h z 7 sm all sig n a l sh o r t circu it fo rward current transfer ratio h fe v ce = 5 vo lts, i c = 100 m a , f = 1 khz 50 op en circu it ou tp u t cap acitan ce c obo v cb = 10 vol t s , i e = 0 m a , f = 1 m h z 250 pf sw itching characteristics saturated turn-on tim e storage tim e fall tim e saturated turn-off tim e t on t s t f t off i c = 5 a, i b1 = 500 m a , i b2 = -500 m a , v beof f = 3.7 v, r l = 6 ? 0.5 1.4 0.5 1.5 s s s s semicoa c orporation copy right ? 20 10
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