elektronische bauelemente SSE12N65SL 12a , 650v , r ds(on) 0.8 n-ch enhancement mode power mosfet 07-nov-2013 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. to - 220 p rohs compliant product a suffix of -c specifies halogen free description the SSE12N65SL is the highest performance trench n-ch mosfets with extreme high cell density , which provide excellent r ds(on) and gate charge for most of the synchronous buck converter applications . features advanced high cell density trench technology super low gate charge excellent cdv/dt effect decline 100% eas guaranteed green device available absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol rating unit drain-source voltage v ds 650 v gate-source voltage v gs 30 v t c =25c 12 a continuous drain current t c =100c i d 9 a pulsed drain current i dm 48 a t c =25c 225 total power dissipation derate above 25c p d 1.8 w single pulse avalanche energy 1 e as 786 mj operating junction and storage temperature range t j , t stg -55~150 c thermal resistance rating maximum thermal resistance junction-ambient r ja 62.5 c / w maximum thermal resistance junction-case r jc 0.56 c / w notes: 1. l=30mh,i as =6.66a, v dd =140v, r g =25 , starting t j =25c 1 gate 3 source 2 drain millimeter millimeter ref. min. max. ref. min. max. a 9.3 10.6 h 2.54 bcs. b 14.2 16.5 i 1.8 2.9 c 2.7 bsc. j 2.6 3.95 d 12.6 14.7 k 0.3 0.6 e 1.0 1.8 l 5.8 7.0 f 0.4 1.0 m 1.2 1.45 g 3.6 4.8
elektronische bauelemente SSE12N65SL 12a , 650v , r ds(on) 0.8 n-ch enhancement mode power mosfet 07-nov-2013 rev. a page 2 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t j = 25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage bv dss 650 - - v v gs =0, i d = 250 a gate-threshold voltage v gs(th) 2 - 4 v v ds =v gs , i d =250 a gate-source leakage current i gss - - 100 na v gs = 30v drain-source leakage current i dss - - 1 a v ds =650v, v gs =0 static drain-source on-resistance r ds(on) - 0.64 0.8 v gs =10v, i d =6a total gate charge 1.2 q g - 24.15 - gate-source charge 1.2 q gs - 7.86 - gate-drain change 1.2 q gd - 7.47 - nc i d =12a v ds =520v v gs =10v turn-on delay time 1.2 t d(on) - 37.67 - rise time 1.2 t r - 61.67 - turn-off delay time 1.2 t d(off) - 80.33 - fall time 1.2 t f - 46.67 - ns v dd =325v i d =12a r g =25 input capacitance c iss - 1476 - output capacitance c oss - 152 - reverse transfer capacitance c rss - 4.5 - pf v gs =0 v ds =25v f =1.0mhz source-drain diode diode forward voltage v sd - - 1.4 v i s =12a, v gs =0 continuous source current i s - - 12 a pulsed source current i sm - - 48 a integral reverse p-n junction diode in the mosfet reverse recovery time t rr - 590.61 - ns reverse recovery charge q rr - 5.62 - c i s =12a,v gs =0, dl f /dt=100a/ s notes: 1. pulse test: pulse width Q 300 s, duty cycle Q 2% 2. essentially independent of operating temperatur e.
elektronische bauelemente SSE12N65SL 12a , 650v , r ds(on) 0.8 n-ch enhancement mode power mosfet 07-nov-2013 rev. a page 3 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSE12N65SL 12a , 650v , r ds(on) 0.8 n-ch enhancement mode power mosfet 07-nov-2013 rev. a page 4 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente SSE12N65SL 12a , 650v , r ds(on) 0.8 n-ch enhancement mode power mosfet 07-nov-2013 rev. a page 5 of 5 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical test curves
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