smd type mosfet 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1gate 2 source 3 drain 2SK2158 features capable of drive gate with 1.5 v because of high input impedance, there is no need to consider driving current. bias resistance can be omitted, enabling reduction in total number of parts. absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 50 v gate to source voltage v gss 7.0 v i d 0.1 a i dp * 0.2 a power dissipation p d 200 m w channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =50v,v gs =0 1.0 a gate leakage current i gss v gs = 7.0v,v ds =0 3.0 a gate to source cutoff voltage v gs(off) v ds =3v,i d =10 a 0.5 0.7 1.1 v forward transfer admittance y fs v ds =3v,i d =10ma 20 ms v gs =1.5v,i d =1.0ma 32 50 v gs =2.5v,i d =10ma 16 20 v gs =4.0v,i d =1.0ma 12 15 input capacitance c iss 6pf output capacitance c oss 8pf reverse transfer capacitance c rss 1pf turn-on delay time t d(on) 9ns rise time tr 48 ns turn-off delay time t d(off) 21 ns fall time tf 31 ns v ds =3v,v gs =0,f=1mhz i d =20ma,v gs(on) =3v,r l =150 ,r g =10 ,v dd =3v drain to source on-state resistance r ds(on) marking marking g23 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com mosfet smd type smd type product specification
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