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www.irf.com 1 11/15/2010 IRLR6225PBF hexfet power mosfet notes through are on page 8 features and benefits applications ? battery protection switch gds gate drain source d-pak IRLR6225PBF d s g note form quantit y IRLR6225PBF d-pak tube/bulk 75 irlr6225trpbf d-pak ta p e and reel 2000 orderable part number package type standard pack features benefits industry-standard pinout multi-vendor compatibility compatible with existin g surface mount techniques results in easier manufacturin g rohs compliant containing no lead, no bromide and no halogen ? environmentally friendlier msl1, industrial qualification increased reliability absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t c = 25c power dissipation p d @ t c = 100c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case) -55 to + 150 63 0.5 25 max. 63 400 12 20 100 v w a c v ds 20 v r ds(on) max (@v gs = 4.5v) 4.0 m ? r ds(on) max (@v gs = 2.5v) 5.2 m ? q g (typical) 48 nc r g (typical) 2.2 ? i d 42 a
2 www.irf.com d s g thermal resistance parameter typ. max. units r jc junction-to-case ??? 2.0 r ja junction-to-ambient (pcb mount) ??? 50 c/w r ja junction-to-ambient ??? 110 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 20 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 6.6 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 3.2 4.0 ??? 4.2 5.2 v gs(th) gate threshold voltage 0.5 0.8 1.1 v ? v gs(th) gate threshold voltage coefficient ??? -4.0 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 205 ??? ??? s q g total gate charge ??? 48 72 q gs1 pre-vth gate-to-source charge ??? 2.6 ??? q gs2 post-vth gate-to-source charge ??? 3.6 ??? q gd gate-to-drain charge ??? 19 ??? q godr gate charge overdrive ??? 23 ??? see fig.17 & 18 q sw switch char g e (q gs2 + q gd ) ??? 23 ??? q oss output charge ??? 21 ??? nc r g gate resistance ??? 2.2 ??? ? t d(on) turn-on delay time ??? 9.7 ??? t r rise time ??? 37 ??? t d(off) turn-off delay time ??? 63 ??? t f fall time ??? 52 ??? c iss input capacitance ??? 3770 ??? c oss output capacitance ??? 915 ??? c rss reverse transfer capacitance ??? 650 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener g y mj i ar avalanche current a e ar repetitive avalanche ener g y mj diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.2 v t rr reverse recovery time ??? 35 53 ns q rr reverse recovery charge ??? 57 86 nc t on forward turn-on time time is dominated by parasitic inductance v gs = 2.5v, i d = 17a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 10v, i d = 21a v ds = 16v, v gs = 0v, t j = 125c m ? a i d = 17a t j = 25c, i f = 17a, v dd = 10v di/dt = 200a/s t j = 25c, i s = 17a, v gs = 0v showing the integral reverse p-n junction diode. mosfet symbol v ds = 16v, v gs = 0v v dd = 10v, v gs = 4.5v i d = 17a v gs = 0v v ds = 10v v ds = 10v ??? conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 4.5v, i d = 21a v gs = 12v v gs = -12v v ds = 16v, v gs = 0v see fig.15 max. 170 17 ? = 1.0mhz ??? ??? 400 ??? ??? ??? 6.3 v ds = v gs , i d = 50a a 100 na ns pf nc conditions
www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 4.5v 3.5v 3.0v 2.3v 2.0v 1.8v bottom 1.5v 60s pulse width tj = 25c 1.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1.5v 60s pulse width tj = 150c vgs top 10v 4.5v 3.5v 3.0v 2.3v 2.0v 1.8v bottom 1.5v 0.0 1.0 2.0 3.0 4.0 5.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 42a v gs = 4.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 16v v ds = 10v v ds = 4.0v i d = 17a
4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 25 50 75 100 125 150 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) limited by package -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec dc limited by package
www.irf.com 5 fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
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+ - 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.9a 8.6a bottom 17a 0 2 4 6 8 10 12 14 v gs, gate -to -source voltage (v) 1 2 3 4 5 6 7 8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 17a t j = 125c t j = 25c
6 www.irf.com fig 16.
for n-channel hexfet power mosfets fig 17. gate charge test circuit fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? !"# ?
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8 www.irf.com qualification standards can be found at international rectifier?s web site http://www .irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www .irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release.
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 1.2mh, r g = 50 ? , i as = 17a. pulse width 400s; duty cycle 2%. r is measured at t j of approximately 90c. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. ! "# $%& '()* $ capability. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2010 data and specifications subject to change without notice.

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch ms l 1 (per je de c j-s t d-020d ??? ) rohs compliant yes d-pak qualification information ? moisture sensitivity level qualification level industrial ?? (per je dec jes d47f ??? guidelines )

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