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ver. 2008-10-31 NJG1135MD7 - 1 - cdma dual band lna gaas mmic ! general description ! package outline the NJG1135MD7 is a gaas lna mmic designed for cdma2000 dual band (cellular and pcs) application. the NJG1135MD7 has lna pass-through function to select high gain mode or low gain. the NJG1135MD7 achieved high iip3 and low noise figure at the high gain mode, and low current consumption at the low gain mode. an ultra-small and ultra-thin eqfn14-d7 package is adopted. ! features " low voltage operation +2.8v typ. " low control voltage operation +1.8v min. [lna high gain mode] " high input ip3 +10dbm typ. @ f=880mhz +8dbm typ. @ f=1960mhz " high gain +16db typ. @ f=880mhz / 1960mhz " low noise figure 1.4db typ. @ f=880mhz / 1960mhz [lna low gain mode] " low current consumption 30ua typ. " high input ip3 +19dbm typ. @ f=880mhz +17dbm typ. @ f=1960mhz " ultra-small and ultra-thin package eqfn14-d7 (package size: 1.6x1.6x0.397mm typ., lead and halogen-free) ! pin configuration pin connection 1. gnd 8. gnd 2. vctl2 9. gnd 3. vctl1 10. gnd 4. gnd 11. gnd 5. rfout1 12. rfin2 6. rfout2 13. rfin1 7. gnd 14. gnd ! trueth table ?h?=v ctl (h), ?l?=v ctl (l) cellular band pcs band vctl1 vctl2 lna bypass lna bypass l l off on off on l h on off off on h l off on on off h h on off on off note: specifications and description listed in this datasheet are subject to change without notice. NJG1135MD7 (top view) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pcs cellular
NJG1135MD7 - 2 - ! absolute maximum ratings (t a =+25c, z s =z l =50 ) parameters symbol conditions ratings units supply voltage v dd 5.0 v control voltage v ctl vctl1, vctl2 terminal 5.0 v input power p in v dd =2.8v +15 dbm power dissipation p d 4-layer fr4 pcb with through-hole (74.2x74.2mm), t j =150c 1300 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+150 c ! electrical characteristics 1 (dc characteristics) (general conditions: v dd =2.8v, t a =+25c, z s =z l =50 ) parameters symbol conditions min typ max units operating voltage v dd 2.65 2.8 2.95 v control voltage (high) v ctl (h) 1.8 2.8 2.95 v control voltage (low) v ctl (l) -0.3 0 0.3 v operating current1 (cellular band high gain mode) i dd 1 rf off, v ctl 1=0v, v ctl 2=2.8v - 10 14 ma operating current2 (pcs band high gain mode) i dd 2 rf off, v ctl 1=2.8v, v ctl 2=0v - 10 14 ma operating current3 (lna all off mode) i dd 3 rf off, v ctl 1=0v, v ctl 2=0v - 30 60 a control current1 i ctl 1 rf off, v ctl 1=2.8v - 17 30 a control current2 i ctl 2 rf off, v ctl 2=2.8v - 17 30 a
NJG1135MD7 - 3 - ! electrical characteristics 2 (ce llular band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =880mhz, t a =+25c, z s =z l =50 , with application circuit) parameters symbol conditions min typ max units small signal gain 1 gain1 exclude pcb, connector losses (input and output) 0.11db 14.5 16.0 - db noise figure 1 nf1 exclude pcb, connector losses (input) 0.06db - 1.4 1.8 db 1db gain compression input power 1 p-1db_1 -8 -4 - dbm 3rd order input intercept point 1 iip3_1 f1=f rf , f2=f rf +100khz, pin=-25dbm +7 +10 - dbm rf in vswr 1 vswr i _1 - 1.5 2.0 rf out vswr 1 vswr o _1 - 1.5 2.0 ! electrical characteristics 3 (cellular band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=0v, f rf =880mhz, t a =+25c, z s =z l =50 , with application circuit) parameters symbol conditions min typ max units small signal gain 2 gain2 exclude pcb, connector losses (input and output) 0.11db -4.0 -2.5 - db noise figure 2 nf2 exclude pcb, connector losses (input and output) 0.11db - 2.5 5.0 db 1db gain compression input power 2 p-1db_2 +3.5 +10.5 - dbm 3rd order input intercept point 2 iip3_2 f1=f rf , f2=f rf +100khz, pin=-12dbm +15 +19 - dbm rf in vswr 2 vswr i _2 - 2.0 2.5 rf out vswr 2 vswr o _2 - 1.5 2.0
NJG1135MD7 - 4 - ! electrical characteristics 4 (p cs band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=2.8v, v ctl 2=0v, f rf =1960mhz, t a =+25c, z s =z l =50 , with application circuit) parameters symbol conditions min typ max units small signal gain 3 gain3 exclude pcb, connector losses (input and output) 0.22db 14.5 16.0 - db noise figure 3 nf3 exclude pcb, connector losses (input) 0.12db - 1.4 1.8 db 1db gain compression input power 3 p-1db_3 -10 -6 - dbm 3rd order input intercept point 3 iip3_3 f1=f rf , f2=f rf +100khz, pin=-25dbm +5 +8 - dbm rf in vswr 3 vswr i _3 - 2.3 3.1 rf out vswr 3 vswr o _3 - 1.5 2.2 ! electrical characteristics 5 (pcs band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=0v, f rf =1960mhz, t a =+25c, z s =z l =50 , with application circuit) parameters symbol conditions min typ max units small signal gain 4 gain4 exclude pcb, connector losses (input and output) 0.22db -5.0 -3.5 - db noise figure 4 nf4 exclude pcb, connector losses (input and output) 0.22db - 4.0 5.5 db 1db gain compression input power 4 p-1db_4 +1.5 +8.5 - dbm 3rd order input intercept point 4 iip3_4 f1=f rf , f2=f rf +100khz, pin=-12dbm +13 +17 - dbm rf in vswr 4 vswr i _4 - 2.3 2.9 rf out vswr 4 vswr o _4 - 1.5 2.0
NJG1135MD7 - 5 - ! terminal infomation notes: 1) ground terminal (no.1, 4, 8, and 11) should be connected with the ground plane as close as possible for good rf performance, because distanc e to gnd makes parasitic inductance. no. symbol description 1 gnd ground terminal. 2 vctl2 control port 2. this terminal is set to more than +1.8v~+2.95v of logical high level for high gain mode of cellular band lna, and set to ?0.3v~+0.3v of logical low level for low gain mode of cellular band lna. 3 vctl1 control port 1. this terminal is set to more than +1.8v~+2.95v of logical high level for high gain mode of pcs band lna, and set to ?0.3v~+0.3v of logical low level for low gain mode of pcs band lna. 4 gnd ground terminal. 5 rfout1 rf output terminal of pcs band signal. rf signal and dc power is input through external matching circuit connected to this terminal. external matching circuit and dc blocking capacitor are required. 6 rfout2 rf output terminal of cellular band signal. rf signal and dc power is input through external matching circuit connected to this terminal. external matching circuit and dc blocking capacitor are required. 7 gnd ground terminal. this terminal is not connected with internal circuit. 8 gnd ground terminal. 9 gnd ground terminal. this terminal is not connected with internal circuit. 10 gnd ground terminal. this terminal is not connected with internal circuit. 11 gnd ground terminal. 12 rfin2 rf input terminal of cellular band signal. rf signal is input through external matching circuit connected to this terminal. a dc blocking capacitor is not required. 13 rfin1 rf input terminal of pcs band signal. rf signal is input through external matching circuit connected to this terminal. a dc blocking capacitor is not required. 14 gnd ground terminal. this terminal is not connected with internal circuit.
NJG1135MD7 - 6 - ! electrical characteristics (cellu lar band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =880mhz, t a =+25c, z s =z l =50 , with application circuit) -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=-4.5dbm f=880mhz 0 5 10 15 20 -40 -30 -20 -10 0 10 gain, idd vs. pin 8 10 12 14 16 gain (db) pin (dbm) gain p-1db(in)=-4.5dbm f=880mhz idd idd (ma) -100 -80 -60 -40 -20 0 20 40 -30 -20 -10 0 10 20 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout iip3=+9.8dbm f1=880mhz, f2=f1+100khz im3 10 11 12 13 14 15 16 17 18 750 800 850 900 950 1000 gain, nf vs. frequency 0 0.5 1 1.5 2 2.5 3 3.5 4 gain (db) frequency (mhz) gain f=750~1000mhz nf nf (db) 18 19 20 21 22 23 24 25 26 840 850 860 870 880 890 900 910 920 oip3, iip3 vs. frequency 6 7 8 9 10 11 12 13 14 oip3 (dbm) frequency (mhz) oip3 f1=840~920mhz, f2=f1+100khz, pin=-25dbm iip3 iip3 (dbm)
NJG1135MD7 - 7 - ! electrical characteristics (cellu lar band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =880mhz, t a =+25c, z s =z l =50 , with application circuit) s11, s22 s21, s12 vswr zin, zout s21, s12 (~20ghz) s11, s22 (~20ghz)
NJG1135MD7 - 8 - ! electrical characteristics (cellu lar band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =880mhz, z s =z l =50 , with application circuit) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency ta=-40 o c ta=-20 o c ta=0 o c ta=25 o c ta=60 o c ta=85 o c k factor frequency (ghz) f=50m~20ghz 0 2 4 6 8 10 12 14 -40 -20 0 20 40 60 80 100 idd, ictl2 vs. temperature 0 5 10 15 20 25 30 35 idd (ma) temperature ( o c) idd rf off ictl2 ictl2 (ua) 10 11 12 13 14 15 16 17 18 -40-20 0 20406080100 gain, nf vs. temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 gain (db) temperature ( o c) gain f=880mhz nf nf (db) -12 -10 -8 -6 -4 -2 -40-20 0 20406080100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) f=880mhz 1 1.5 2 2.5 3 -40-20 0 20406080100 vswri, vswro vs. temperature vswri, vswro temperature ( o c) vswri f=880mhz vswro 21 22 23 24 25 26 27 -40-20 0 20406080100 oip3, iip3 vs. temperature 7 8 9 10 11 12 13 oip3 (dbm) temperature ( o c) oip3 f1=880mhz, f2=f1+100khz, pin=-25dbm iip3 iip3 (dbm)
NJG1135MD7 - 9 - ! electrical characteristics (cellu lar band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =880mhz, t a =+25c, z s =z l =50 , with application circuit) -40 -30 -20 -10 0 10 -30 -20 -10 0 10 20 pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=-+13.0dbm f=880mhz -10 -8 -6 -4 -2 0 -30 -20 -10 0 10 20 gain, idd vs. pin 0 50 100 150 200 250 gain (db) pin (dbm) gain p-1db(in)=+13.0dbm f=880mhz idd idd (ua) -100 -80 -60 -40 -20 0 20 40 -20-10 0 102030 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout iip3=+23.5dbm f1=880mhz, f2=f1+100khz im3 -8 -7 -6 -5 -4 -3 -2 -1 0 750 800 850 900 950 1000 gain, nf vs. frequency 0 1 2 3 4 5 6 7 8 gain (db) frequency (mhz) gain f=750~1000mhz nf nf (db) 18 19 20 21 22 23 24 25 26 840 850 860 870 880 890 900 910 920 oip3, iip3 vs. frequency 18 19 20 21 22 23 24 25 26 oip3 (dbm) frequency (mhz) oip3 f1=840~920mhz, f2=f1+100khz, pin=-12dbm iip3 iip3 (dbm)
NJG1135MD7 - 10 - ! electrical characteristics (cellu lar band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =880mhz, t a =+25c, z s =z l =50 , with application circuit) s11, s22 (~20ghz) s21, s12 (~20ghz) vswr zin, zout s21, s12 s11, s22
NJG1135MD7 - 11 - ! electrical characteristics (cellu lar band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =880mhz, z s =z l =50 , with application circuit) -8 -7 -6 -5 -4 -3 -2 -1 0 -40-20 0 20406080100 gain, nf vs. temperature 0 1 2 3 4 5 6 7 8 gain (db) temperature ( o c) gain f=880mhz nf nf (db) 4 6 8 10 12 14 16 -40 -20 0 20 40 60 80 100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) f=880mhz 14 16 18 20 22 24 26 28 -40-20 0 20406080100 oip3, iip3 vs. temperature 14 16 18 20 22 24 26 28 oip3 (dbm) temperature ( o c) oip3 f1=880mhz, f2=f1+100khz, pin=-12dbm iip3 iip3 (dbm) 1 1.5 2 2.5 3 -40-20 0 20406080100 vswri, vswro vs. temperature vswri, vswro temperature ( o c) vswri f=880mhz vswro 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency ta=-40 o c ta=-20 o c ta=0 o c ta=25 o c ta=60 o c ta=85 o c k factor frequency (ghz) f=50m~20ghz 0 10 20 30 40 50 60 -40-20 0 20406080100 idd vs. temperature idd (ua) temperature ( o c) idd rf off
NJG1135MD7 - 12 - ! electrical characteristics (pcs band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =1960mhz, t a =+25c, z s =z l =50 , with application circuit) -30 -20 -10 0 10 20 -40 -30 -20 -10 0 10 pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=-6.3dbm f=1960mhz 0 5 10 15 20 -40 -30 -20 -10 0 10 gain, idd vs. pin 6 8 10 12 14 gain (db) pin (dbm) gain p-1db(in)=-6.3dbm f=1960mhz idd idd (ma) -100 -80 -60 -40 -20 0 20 40 -30 -20 -10 0 10 20 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout iip3=+8.2dbm f1=1960mhz, f2=f1+100khz im3 10 11 12 13 14 15 16 17 18 1.8 1.85 1.9 1.95 2 2.05 2.1 gain, nf vs. frequency 0 0.5 1 1.5 2 2.5 3 3.5 4 gain (db) frequency (ghz) gain f=1.8~2.1ghz nf nf (db) 18 19 20 21 22 23 24 25 26 1.9 1.92 1.94 1.96 1.98 2 oip3, iip3 vs. frequency 6 7 8 9 10 11 12 13 14 oip3 (dbm) frequency (ghz) oip3 f1=1.9~2.0ghz, f2=f1+100khz, pin=-25dbm iip3 iip3 (dbm)
NJG1135MD7 - 13 - ! electrical characteristics (pcs band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =1960mhz, t a =+25c, z s =z l =50 , with application circuit) s11, s22 (~20ghz) s21, s12 (~20ghz) zin, zout vswr s11, s22 s21, s12
NJG1135MD7 - 14 - ! electrical characteristics (pcs band: lna high gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =1960mhz, z s =z l =50 , with application circuit) 10 11 12 13 14 15 16 17 18 -40 -20 0 20 40 60 80 100 gain, nf vs. temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 gain (db) temperature ( o c) gain f=1960mhz nf nf (db) -12 -10 -8 -6 -4 -2 -40-20 0 20406080100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) f=1960mhz 20 21 22 23 24 25 26 -40 -20 0 20 40 60 80 100 oip3, iip3 vs. temperature 6 7 8 9 10 11 12 oip3 (dbm) temperature ( o c) oip3 f1=1960mhz, f2=f1+100khz, pin=-25dbm iip3 iip3 (dbm) 1 1.5 2 2.5 3 -40-20 0 20406080100 vswri, vswro vs. temperature vswri, vswro temperature ( o c) vswri f=1960mhz vswro 0 2 4 6 8 10 12 14 -40 -20 0 20 40 60 80 100 idd, ictl1 vs. temperature 0 5 10 15 20 25 30 35 idd (ma) temperature ( o c) idd rf off ictl1 ictl1 (ua) 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency ta=-40 o c ta=-20 o c ta=0 o c ta=25 o c ta=60 o c ta=85 o c k factor frequency (ghz) f=50m~20ghz
NJG1135MD7 - 15 - ! electrical characteristics (pcs band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =1960mhz, t a =+25c, z s =z l =50 , with application circuit) -40 -30 -20 -10 0 10 -30 -20 -10 0 10 20 pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=+9.0dbm f=1960mhz -10 -8 -6 -4 -2 0 -30 -20 -10 0 10 20 gain, idd vs. pin 0 50 100 150 200 250 gain (db) pin (dbm) gain p-1db(in)=+9.0dbm f=1960mhz idd idd (ua) -100 -80 -60 -40 -20 0 20 40 -20-10 0 102030 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout iip3=+19.5dbm f1=1960mhz, f2=f1+100khz im3 14 15 16 17 18 19 20 21 22 1.9 1.92 1.94 1.96 1.98 2 oip3, iip3 vs. frequency 14 15 16 17 18 19 20 21 22 oip3 (dbm) frequency (ghz) oip3 f1=1.9~2.0ghz, f2=f1+100khz, pin=-12dbm iip3 iip3 (dbm) -8 -7 -6 -5 -4 -3 -2 -1 0 1.8 1.85 1.9 1.95 2 2.05 2.1 gain, nf vs. frequency 1 2 3 4 5 6 7 8 9 gain (db) frequency (ghz) gain f=1.8~2.1ghz nf nf (db)
NJG1135MD7 - 16 - ! electrical characteristics (pcs band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =1960mhz, t a =+25c, z s =z l =50 , with application circuit) s11, s22 (~20ghz) s21, s12 (~20ghz) zin, zout vswr s11, s22 s21, s12
NJG1135MD7 - 17 - ! electrical characteristics (pcs band: lna low gain mode) (general conditions: v dd =2.8v, v ctl 1=0v, v ctl 2=2.8v, f rf =1960mhz, z s =z l =50 , with application circuit) -8 -7 -6 -5 -4 -3 -2 -1 0 -40 -20 0 20 40 60 80 100 gain, nf vs. temperature 0 1 2 3 4 5 6 7 8 gain (db) temperature ( o c) gain f=1960mhz nf nf (db) 4 6 8 10 12 14 16 -40-20 0 20406080100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) p-1db(in) f=1960mhz 10 12 14 16 18 20 22 24 -40 -20 0 20 40 60 80 100 oip3, iip3 vs. temperature 12 14 16 18 20 22 24 26 oip3 (dbm) temperature ( o c) oip3 f1=1960mhz, f2=f1+100khz, pin=-12dbm iip3 iip3 (dbm) 1 1.5 2 2.5 3 -40-20 0 20406080100 vswri, vswro vs. temperature vswri, vswro temperature ( o c) vswri f=1960mhz vswro 0 10 20 30 40 50 60 -40-20 0 20406080100 idd vs. temperature idd (ua) temperature ( o c) idd rf off 0 5 10 15 20 0 5 10 15 20 k factor vs. frequency ta=-40 o c ta=-20 o c ta=0 o c ta=25 o c ta=60 o c ta=85 o c k factor frequency (ghz) f=50m~20ghz
NJG1135MD7 - 18 - ! application circuit parts id comments l1, l2, l4 murata (lqp03t series) l3 tdk (mlk0603 series) l5~l8 taiyo-yuden (hk1005 series) c1~c3 murata (grm03 series) parts list rfout2 l7 10n l3 6.8n l4 4.7n c1 100p c2 100p c3 0.01u v dd 2.8v rfout1 l1 4.7n l2 15n l6 10n l5 15n l8 12n v ctl 2 2.8v / 0v v ctl 1 rfin2 rfin1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 pcs cellular 2.8v / 0v
NJG1135MD7 - 19 - ! test pcb layout (top view) pcb (fr-4): t=0.2mm microstrip line width=0.4mm (z 0 =50ohm) pcb size=17.0mm x 17.0mm precaution: in order not to couple with terminal rfin and rfout, please layout ground pattern under the ic. rfout1 (pcs) rfin2 (cellular) rfin1 (pcs) v dd v ctl 1 v ctl 2 l1 l 2 l 3 l 4 l 5 l 6 l 7 l 8 c1 c 2 c 3 rfout2 (cellular)
NJG1135MD7 - 20 - ! package outline (eqfn14-d7) cautions on using this product this product contains gallium-arseni de (gaas) which is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ? t o waste this p roduct, p lease obe y the relatin g law of y ou r countr y . this product may be damaged with electric static dischar ge (esd) or spike voltage. please handle with care t o avoid these dama g es. [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.

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