process CP592V small signal transistors pnp - amp/switch transistor chip princip al device types 2n3906 cmkt3906 cmlt3906e cmpt3906 cmst3906 cxt3906 czt3906 process epitaxial planar die size 12 x 20 mils die thickness 7.1 mils base bonding pad area 3.6 x 3.6 mils emitter bonding pad area 3.6 x 3.6 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r0 (13- february 2006) gross dier per 4 inch w afer 47,150
process CP592V typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r0 (13- february 2006)
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