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| Datasheet File OCR Text: |
| process CP593 small signal transistors pnp - amp/switch transistor chip princip al device types 2n4403 2n5366 process epitaxial planar die size 19 x 19 mils die thickness 9.0 mils base bonding pad area 3.5 x 4.3 mils emitter bonding pad area 3.5 x 4.5 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry r0 (5- january 2006) gross die per 4 inch w afer 30,475
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