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| Datasheet File OCR Text: |
| process CPD66X low leakage diode low leakage diode chip geometry gross die per 5 inch wafer 54,848 principal device types cmod3003 cmld3003dog cmpd3003a cmpd3003c cmpd3003s process details die size 17.5 x 17.5 mils die thickness 5.9 mils anode bonding pad area 7.9 mils diameter top side metalization al - 30,000? back side metalization au-as - 13,000? www.centralsemi.com r1 (19-july 2010)
process CPD66X typical electrical characteristics www.centralsemi.com r1 (19-july 2010) |
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