? 2010 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 2500 v v dgr t j = 25 c to 150 c, r gs = 1m 2500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c 5 a i dm t c = 25 c, pulse width limited by t jm 20 a i a t c = 25 c 2.5 a e as t c = 25 c 2.5 j p d t c = 25 c 960 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-264) 1.13/10 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g high voltage power mosfet w/ extended fbsoa IXTK5N250 ixtx5n250 n-channel enhancement mode avalanche rated guaranteed fbsoa v dss = 2500v i d25 = 5a r ds(on) < 8.8 ds100280(08/10) features z avalanche rated z fast intrinsic diode z guaranteed fbsoa at 75 c z low package inductance advantages z easy to mount z space savings applications z high voltage power supplies z capacitor discharge z pulse circuits symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 2500 v v gs(th) v ds = v gs , i d = 1ma 2.0 5.0 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = 2kv, v gs = 0v 50 a t j = 125 c 4 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 8.8 advance technical information g = gate d = drain s = source tab = drain plus247 (ixtx) tab g d s to-264 (ixtk) s g d tab
ixys reserves the right to change limits, test conditions, and dimensions. IXTK5N250 ixtx5n250 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note: 1. pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 50v, i d = 0.5 ? i d25 , note 1 3.0 4.5 6.0 s c iss 8560 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 315 pf c rss 90 pf t d(on) 33 ns t r 20 ns t d(off) 90 ns t f 44 ns q g(on) 200 nc q gs v gs = 10v, v ds = 1000v, i d = 0.5 ? i d25 28 nc q gd 70 nc r thjc 0.13 c/w r thcs 0.15 c/w safe operating area specification symbol test conditions characteristic values min. typ. max. soa v ds = 2000v, i d = 0.11a, t c = 75 c, tp = 3s 220 w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 5 a i sm repetitive, pulse width limited by t jm 20 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 1.2 s resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = 2.5a, -di/dt = 100a/ s, v r = 100v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. to-264 outline plus247 tm outline terminals: 1 - gate 2 - drain 3 - source 4 - drain terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim.
? 2010 ixys corporation, all rights reserved IXTK5N250 ixtx5n250 fig. 1. output characteristics @ t j = 25oc 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 5 v 3 v 4 v fig. 2. output characteristics @ t j = 125oc 0 0.5 1 1.5 2 2.5 0 5 10 15 20 25 30 35 v ds - volts i d - amperes v gs = 10v 3 v 4v fig. 3. r ds(on) normalized to i d = 2.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 5a i d = 2.5a fig. 4. r ds(on) normalized to i d = 2.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 1 2 3 4 5 6 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. IXTK5N250 ixtx5n250 fig. 7. transconductance 0 1 2 3 4 5 6 7 8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 2 4 6 8 10 12 14 16 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 180 200 220 q g - nanocoulombs v gs - volts v ds = 1000v i d = 2.5a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 11. forward-bias safe operating area @ t c = 25oc 0.1 1 10 100 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 100ms 1ms 100s r ds(on) limit 10ms dc fig. 12. forward-bias safe operating area @ t c = 75oc 0.1 1 10 100 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 75oc single pulse 100ms 1ms 100s r ds(on) limit 10ms dc 25s
? 2010 ixys corporation, all rights reserved ixys ref: ixt_5n250(9p)8-13-10-a IXTK5N250 ixtx5n250 fig. 12. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 13. maximum transient thermal impedance aaaaaa 0.300
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