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| sod-923 plastic-encapsulate diodes RB520CS-30 schottky barrier d iode features z low reverse current and low forward voltage + z high reliability - marking: e maximum ratings (t a =25 ) parameter symbol limit unit dc reverse voltage v r 30 v mean rectifying current i o 100 ma peak forward surge current i fsm 0.5 a electrical characteristic (t a =25 ) parameter symbol min typ max unit conditions v f1 0.45 i f1 =10ma forward voltage v f 2 0.6 v i f2 =100ma reverse current i r 0.5 a v r =10v sod-923 junction temperature t j 1 25 storage temperature t stg - 55 ~ + 150 power dissipation p d 100 mw thermal resi stance junction to ambient r ja 1000 /w 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,feb,2013
0 100 200 300 400 500 0.01 0.1 1 10 100 5 1015202530 0.01 0.1 1 10 100 1000 0 25 50 75 100 125 0 25 50 75 100 125 0 5 10 15 20 25 30 35 0 5 10 15 20 25 0.1 forward characteristics forward voltage v f (mv) forward current i f (ma) t a = 2 5 t a = 1 0 0 reverse characteristics t a = 2 5 t a = 1 0 0 reverse current i r (ua) reverse voltage v r (v) RB520CS-30 power derating curve power dissipation p d (mw) ambient temperature t a ( ) t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification |
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