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Datasheet File OCR Text: |
inchange semiconductor product specification silicon npn power transistors 2N6371 description ? with to-3 package ? low collector saturation voltage ? high dissipation capability ? excellent safe operating area applications ? series and shunt regulators ? high-fidelity amplifiers ? power-switching circuits pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 50 v v ceo collector-emitter voltage open base 40 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 7 a p d total power dissipation t c =25 ?? 117 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.5 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N6371 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 40 v v cesat-1 collector-emitter saturation voltage i c =8a ;i b =0.8a 1.5 v v cesat-2 collector-emitter saturation voltage i c =16a; i b =4a 4.0 v v be base-emitter on voltage i c =16a ; v ce =4v 4.0 v i ceo collector cut-off current v ce =25v; i b =0 1.5 ma i cex collector cut-off current v ce =45v;v be(off) =1.5v v ce =40v;v be(off) =1.5v;t c =150 ?? 2.0 10.0 ma i ebo emitter cut-off current v eb =5v; i c =0 10 ma h fe-1 dc current gain i c =8a ; v ce =4v 15 60 h fe-2 dc current gain i c =16a ; v ce =4v 4 f t transition freuqency i c =1a ; v ce =4v 0.8 mhz inchange semiconductor product specification 3 silicon npn power transistors 2N6371 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
Price & Availability of 2N6371
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