to ? 92 1. emitter 2. collector 3. base to-92 plastic-encapsulate transistors 2sc21 3 0 transistor (npn) features z high dc current gain maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c = 0.1ma,i e =0 4 5 v collector-emitter breakdown voltage v (br)ceo i c =10ma,i b =0 40 v emitter-base breakdown voltage v (br)ebo i e =0.1ma,i c =0 5 v collector cut-off current i cbo v cb =35v,i e =0 0.1 a collector cut-off current i ceo v ce =25v,i b =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =1v, i c =100ma 100 320 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =20ma 0.5 v base-emitter voltage v be v ce =1v, i c =10ma 0.8 v collector output capacitance c ob v cb =10v,i e =0, f=1mhz 13 pf transition frequency f t v ce =5v,i c =10ma 100 mhz classification of h fe rank o y range 100-200 160-320 symbol parameter value unit v cbo collector-base voltage 4 5 v v ceo collector-emitter voltage 4 0 v v ebo emitter-base voltage 5 v i c collector current 0.8 a p c collector power dissipation 600 mw r ja thermal resistance from junction to ambient 208 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
0.1 1 10 1 10 100 10 20 30 40 50 0 50 100 150 200 250 300 0.01 0.1 1 10 100 0 100 200 300 400 500 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 800 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 0 100 200 300 0123456 0 50 100 150 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 100 f=1mhz i e =0 / i c =0 t a =25 o c 2SC2130 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =5v t a =25 o c i c f t ?? 800 v ce = 1v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 800 collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =25 i c v besat ?? 800 200 20 800 t a =25 t a =100 =25 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic vce=1v ta=25 ta=100 o c base-emitter voltage v be (v) collector current i c (ma) v be ?? i c 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
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