AOT8N80/aotf8n80 800v, 7.4a n-channel mosfet general description product summary v ds i d (at v gs =10v) 7.4a r ds(on) (at v gs =10v) < 1.63 w 100% uis tested 100% r g tested for halogen free add "l" suffix to part number: AOT8N80l & aotf8n80l symbol v ds v gs the AOT8N80 & aotf8n80 have been fabricated using an advanced high voltage mosfet process that is designed to deliver high levels of performance and robustness in popular ac-dc applications.by providi ng low r ds(on) , c iss and c rss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. v units parameter absolute maximum ratings t a =25c unless otherwise noted AOT8N80 aotf8n80 900v@150 drain-source voltage 800 gate-source voltage t =25c 7.4 7.4* v 30 g d s g d s g d s top view to - 220f to - 220 AOT8N80 aotf8n80 i dm i ar e ar e as peak diode recovery dv/dt dv/dt t j , t stg t l symbol r q ja r q cs r q jc * drain current limited by maximum junction tempera ture. a w w/ o c c mj v/ns c maximum case-to-sink a maximum junction-to-case mj c/w c/w derate above 25 o c parameter AOT8N80 aotf8n80 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 5 50 245 junction and storage temperature range maximum junction-to-ambient a,d power dissipation b t c =100c a 26 pulsed drain current c continuous drain current t c =25c 7.4 i d 4.6 7.4* 4.6* avalanche current c 217 single pulsed avalanche energy g 433 3.8 repetitive avalanche energy c p d t c =25c thermal characteristics 300 -55 to 150 2.0 0.4 0.51 -- units c/w 65 0.5 65 2.5 rev0: jun 2012 www.aosmd.com page 1 of 6
AOT8N80/aotf8n80 symbol min typ max units 800 900 bv dss / ? tj 0.86 v/ o c 1 10 i gss gate-body leakage current 100 n a v gs(th) gate threshold voltage 3.3 3.9 4.5 v r ds(on) 1.35 1.63 w g fs 9 s v sd 0.72 1 v i s maximum body-diode continuous current 7.4 a i sm 26 a c iss 1100 1375 1650 pf c oss 70 101 132 pf c rss 6 11 16 pf r g 1.7 3.5 5.3 w q g 20 26 32 nc q gs 7.3 nc q gd 9.1 nc t d(on) 35 ns t r 51 ns t d(off) 69 ns v gs =0v, v ds =25v, f=1mhz switching parameters i s =1a,v gs =0v v ds =40v, i d =4a forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions v ds =5v, i d =250 m a v ds =640v, t j =125c zero gate voltage drain current i dss zero gate voltage drain current v ds =800v, v gs =0v bv dss id=250 a, vgs=0v m a v ds =0v, v gs =30v v drain-source breakdown voltage maximum body-diode pulsed current input capacitance output capacitance turn-on delaytime dynamic parameters turn-off delaytime v gs =10v, v ds =400v, i d =8a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time reverse transfer capacitance i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c gate drain charge total gate charge v gs =10v, v ds =640v, i d =8a gate source charge static drain-source on-resistance v gs =10v, i d =4a t d(off) 69 ns t f 41 ns t rr 380 484 585 ns q rr 4.5 6 7.5 m c this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =8a,di/dt=100a/ m s,v ds =100v body diode reverse recovery charge i f =8a,di/dt=100a/ m s,v ds =100v turn-off delaytime r g =25 w turn-off fall time body diode reverse recovery time a. the value of r q ja is measured with the device in a still air environm ent with t a =25 c. b. the power dissipation p d is based on t j(max) =150 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c, ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedance from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. g. l=60mh, i as =3.8a, v dd =150v, r g =25 ? , starting t j =25 c rev0: jun 2012 www.aosmd.com page 2 of 6
AOT8N80/aotf8n80 typical electrical and thermal characteristics 0 3 6 9 12 15 0 5 10 15 20 25 30 i d (a) v ds (volts) fig 1: on-region characteristics v gs =5v 5.5v 10v 6v 0.1 1 10 100 2 4 6 8 10 i d (a) v gs (volts) figure 2: transfer characteristics -55 c v ds =40v 25 c 125 c 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 r ds(on) ( w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage v gs =10v 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature v gs =10v 6.5v 40 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c voltage 0.8 0.9 1 1.1 1.2 -100 -50 0 50 100 150 200 bv dss (normalized) t j (c) figure 5: break down vs. junction temparature rev0: jun 2012 www.aosmd.com page 3 of 6
AOT8N80/aotf8n80 typical electrical and thermal characteristics 0 3 6 9 12 15 0 8 16 24 32 40 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =640v i d =8a 1 10 100 1000 10000 0.1 1 10 100 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 9: maximum forward biased safe 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 0.01 0.1 1 10 100 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t c =25 c 100 m s 1s figure 9: maximum forward biased safe operating area for AOT8N80 (note f) figure 10: maximum forward biased safe operating area for aotf8n80 (note f) 0 2 4 6 8 10 0 25 50 75 100 125 150 current rating i d (a) t case (c) figure 11: current de-rating (note b) rev0: jun 2012 www.aosmd.com page 4 of 6
AOT8N80/aotf8n80 typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 12: normalized maximum transient thermal imp edance for AOT8N80 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =0.51 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t on t p d single pulse 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 13: normalized maximum transient thermal imp edance for aotf8n80 (note f) d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.5 c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d rev0: jun 2012 www.aosmd.com page 5 of 6
AOT8N80/aotf8n80 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% res istive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id + vdc l vgs vds bv i unclamped inductive switching (uis) test circuit & waveforms vds ar dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - vdc id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev0: jun 2012 www.aosmd.com page 6 of 6
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