NTE637 schottky barrier diode (surface mount) absolute maximum ratings: (t a = +25 c, note 1, unless otherwise specified) repetitive peak reverse voltage, v rrm 30v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . average rectified forward current, i f(av) 200ma . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . non ? repetitive peak forward surge current (pulse width = 1.0s), i fsm 600ma . . . . . . . . . . . . . . . power dissipation, p d 290mw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range, t stg ? 55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . operating junction temperature, t j ? 55 to +150 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . thermal resistance, junction ? to ? ambient, r thja 430 c/w . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . note 1. these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. electrical characteristics: (t c = +25 c, unless otherwise specified) parameter symbol test conditions min typ max unit breakdown voltage v r i r = 10 a 30 ? ? v forward voltage v f i f = 0.1ma ? ? 240 mv g f i f = 1ma ? ? 320 mv i f = 10ma ? ? 400 mv i f = 30ma ? ? 500 mv i f = 100ma ? ? 0.8 v reverse leakage i r v r = 25v ? ? 2 a total capacitance c t v r = 1v, f = 1.0mhz ? ? 10 pf reverse recovery time t rr i f = i r = 10ma, i rr = 1.0ma, r l = 100 ? ? ? 5.0 ns .098 (2.5) max .074 (1.9) .051 (1.3) .043 (1.1) .007 (0.2) .016 (0.48) .037 (0.95) a k n.c. .118 (3.0) max
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