, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pmd18d, 19d series 300 watt (50 amp continuous, 100 amp peak device selection guide device PMD18D80 pm01 80100 pm019d80 pm01 90100 voltage rating 80v 100v 80v 100v polarity npn npn pnp pnp absolute maximum ratings parameter collector emitter voltage pmd18d, pmd19d80 pmd18d, pmd19d100 collector base voltage pm0180. pmd19d80 pmd18d, pmd19d100 emitter base voltage collector current continuous peak base current thermal resistance total internal power dissipation for operation above tc - 80c. derate (a 2.5 w/c. features ? electrical specifications guaranteed for operating junction temperature range of 0 - 200c ? guaranteed and 100% tested for isb (secondary breakdown current) insur- ing maximum performance at high energy levels ? low thermal resistance for more use- able power and lower operating temperatures ? hermetically sealed nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics all parameters are guaranteed at t, = 0 to 200c, unless otherwise specified. parameter symbol test conditions minimum maximum units on characteristics collector emitter saturation voltage1 base emitter turn-on voltage1 base emitter saturation1 dc current gain1 PMD18D80, 100 pmd19d80, 100 forward bias secondary breakdown current vce(sat) vberward transfer iatio co, h,. nf. vcb = 10 vdc; ie = 0 adc f = 1 mhz; l = 25c lc = 18 adc; vce = 3 vdc f = 1 khz; l - 25'c lc = 18 adc: vce = 3 vdc f = 1 mhz; tj = 25c 300 4 1200 pf
|
