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savantic semiconductor product specification silicon pnp power transistors 2SA887 d escription with to-202 package complement to type 2sc1848 applications medium power amplifier pinning(see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -70 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -5 v i c collector current -2 a i cm collector current-peak -3 a t a =25 1.2 p c collector power dissipation t c =25 10 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-202) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA887 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma; i b =0 -50 v v (br)cbo collector-base breakdown voltage i c =-1ma; i e =0 -70 v v cesat collector-emitter saturation voltage i c =-1a ;i b =-0.1a -0.6 -1.2 v v besat base-emitter saturation voltage i c =-2a ;i b =-0.2 a -1.0 -1.5 v h fe-1 dc current gain i c =-100ma ; v ce =-5v 30 h fe-2 dc current gain i c =-1a ; v ce =-5v 50 220 i cbo collector cut-off current v cb =-40v; i e =0 -1.0 a i ceo collector cut-off current v ce =-20v; i b =0 -100 a i ebo emitter cut-off current v eb =-5v; i c =0 -10 a f t transition frequency i e =0.5a ; v cb =-5v 150 mhz h fe-2 classifications p q r 50-100 80-160 120-220
savantic semiconductor product specification 3 silicon pnp power transistors 2SA887 package outline fig.2 outline dimensions

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