mechanical specifications: die size 98 x 98 mils die thickness 13.8 mils 0.8 mils die passivation sin / sio2 / pi anode bonding pad area 75 x 75 mils top side metalization al C 40,000? back side metalization ti/w/au C 200?/1,000?/1,000? wafer diameter 4 inches gross die per wafer 1,100 the CPC01 silicon carbide schottky die is optimized for high temperature applications. parametrically, the device is energy effi cient as a result of low total conduction losses and minimal changes to switching characteristics as a function of temperature. features: ? positive temperature coefficient ? low reverse leakage current ? temperature independent switching characteristics ? high operating junction temperature ? metalization suitable for standard die attach technologies ? top metalization optimized for wire bonding maximum ratings: (t a =25c) symbol units peak repetitive reverse voltage v rrm 1200 v dc blocking voltage v r 1200 v continuous forward current i f 10 a peak forward surge current (tp=8.3ms) i fsm 50 a operating and storage junction temperature t j , t stg -55 to +225 c electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions typ max units i r v r =1200v 60 400 a i r v r =1200v, t j =175c 0.09 1.0 ma v f i f =10a 1.55 1.8 v v f i f =10a, t j =175c 2.3 3.0 v q c v r =800v, i f =10a, di/dt=750a/s 54 nc c j v r =1.0v, f=1.0mhz 477 pf c j v r =300v, f=1.0mhz 50 pf c j v r =600v, f=1.0mhz 41 pf CPC01 silicon carbide schottky rectifier die 10 amp, 1200 volt applications: ? power inverters ? industrial motor drives ? switch-mode power supplies ? power factor correction ? over-current protection www.centralsemi.com r0 (20-march 2013) www.centralsemi. com
CPC01 typical electrical characteristics www.centralsemi.com r0 (20-march 2013)
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