0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features driver transistors. npn silicon. absolute maximum ratings ta = 25 parameter symbol MMBTA05 mmbta06 unit collector-emitter voltage v ceo 60 80 v collector-base voltage v cbo 60 80 v emitter-base voltage v ebo v collector current i c ma total device dissipation fr-5 board (* 1) @t a =25 derate above 25 p d mw mw/ thermal resistance, junction-to-ambient r ja /w total device dissipation alumina substrate, (* 2) @t a =25 derate above 25 p d mw mw/ thermal resistance, junction-to-ambient r ja /w junction temperature t j storage temperature t stg * 1. fr-5 = 1.0 x 0.75 x 0.062 in. * 2. alumina = 0.4x 0.3 x 0.024 in. 99.5% alumina. 4.0 500 225 1.8 556 300 2.4 417 150 -55to+150 m m b t a 0 5 , m m b t a 0 6 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-emitter breakdown voltage* MMBTA05 60 v mmbta06 80 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 4 v base cutoff current i ces v ce =60v,i b =0 0.1 a collector cutoff current MMBTA05 v cb =60v,i e =0 0.1 a mmbta06 v cb =80v,i e =0 0.1 a i c =10ma,v ce = 1.0 v 100 i c = 100 ma, v ce = 1.0 v 100 collector-emitter saturation voltage v ce( sat) i c = 100 ma, i b =10ma 0.25 v base-emitter saturation voltage v be(on )i c = 100 ma, v ce = 1.0 v 1.2 v current-gain-bandwidth product f t i c =10ma,v ce = 2.0 v, f = 100 mhz 100 mhz * pulse test: pulse width 300 s, duty cycle 2.0%. i cbo dc current gain h fe i c =1.0ma,i b =0 v (br)ceo h fe classification type MMBTA05 mmbta06 marking 1h 1gm m m b t a 0 5 , m m b t a 0 6 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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