document no. ds12636, rev. a revision date: 6/3/09 semi-scale tm pin diodes mssp25250-70 series datasheet description the mssp25250-70 semi-scale tm pin diode is manufactured using aeroflex/metelics proprietary diode process which provides an ultra-low parasitic pin diode in a 0603 surface mount package. this proprietary and unique geometry offers lower electrical and thermal resistance to provide higher average power performance to comparable surface mount diode packages. the low rc product ( < 0.35 ps ) and ultra-low parasitic ls ( < 0.15 nh ) and cpar ( < 0.025 pf ), optimize control circuit frequency performance for series or shunt diode configurations. with lower thermal resistance ( < 30 oc/w ), rf c.w. incident power levels of + 40 dbm and rf peak incident power levels of +55 dbm are very achievable in higher power cold and hot switching applications. the low series resistance ( < 1.2 ) , coupl ed wi t h t h e l on ger m i n or i t y car r i er l i f et i me, ( > 500 s ), provides better iip3 distortion values > + 85 dbm, for rf and microwave switches. applications the mssp25250-70 semi-scale tm pin diode is designed to be used in series, series-shunt, and shunt configurations in higher power switch and attenuator applications, operating from 10 mhz to 6 ghz, requiring high volume, surface mount manufacturing. these devices are durable, reliable, and are capable of meeting all military, commercial, and industrial applications. the devices are fully rohs compliant. environmental capabilities the mssp25250-70 semi-scale tm pin diode is capable of meeting the environmental requirements of mil-std-202, milstd-750, and mil-std-883.. esd rating pin diodes are susceptible to esd conditions as with all semiconductors. the esd rating for these devices is class 1a, hbm. circuit side view features ? 0603 surface mount pin diode ( 1.5 mm x 0.76mm x 0.2 mm h ) ? lower parasitics than comparable surface mount devices ? higher average power handling > 10 w c.w. ? higher voltage rating > 350 volts for higher rf peak power ? lower rs < 1.2 ( lower insertion loss & higher iip3 ) ? l ower t h er mal r esi st an ce ( < 30 o c /w ) f or h i gh er o per at i n g p ower ? rohs compliant
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 6/3/09 2 parameter symbol units test conditions minimum typical maximum value value value voltage breakdown -vb volts | - 10 a | @ dc | - 350 | | - 400 | (see note 1) forward voltage vf volts +100 ma @ dc 0.8 1.1 1.2 reverse leakage current - ir a | -100 v | @ dc | -20 | | -50 | series resistance rs + 100 m a @ 1 g h z 0. 9 1. 2 parallel resistance rp k - 40 v @ 1 g h z 50 150 capacitance ct pf -100 v @ 1 mhz 0.28 0.32 minority carrier lifetime tl s ( 50% control C 90 % 400 500 700 output voltage) if =+10 ma /-ir =- 6 ma f = 1 khz c.w. thermal resistance o c /w i h = 1a , i l = 10 m a 30 35 absolute maximum ratings @ t a = + 25 oc ( unless otherwise defined ) parameter absolute maximum value forward current 500 ma reverse voltage | -400 | v forward voltage 1.2 v @ 100 ma operating temperature - 65 oc to + 125 oc storage temperature - 65 oc to + 150 oc junction temperature + 175 oc total dissipated rf & d.c. power 2.0 w @ + 25 oc ( diode case in air ambient ) de-rate linearly at -13.3 mw / oc to 0 w @ + 175 oc total dissipated rf & d.c. power 5.0 w @ + 25 oc ( diode case at thermal ground ) de-rate linearly at -33.3 mw / oc to 0 w @ + 175 oc assembly temperature + 260 oc for 10 seconds mssp25250-70 electrical specifications @ t a = + 25 oc ( unless otherwise defined) electrical specification notes: 1. series resistance, ( rs ) and parallel resistance ( rp ) are measured on the hp 4291 impedance analyzer. 2. total capacitance, ( ct ) is the summation of the diode junction capacitance, ( cj ), and the parasitic capacitance, cpar. semi-scale tm pin diodes
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 6/3/09 3 semi-scale tm pin diodes part number ordering information: assembly instructions the semi-scale tm pin diodes are capable of being placed onto circuit boards with pick and place manufacturing equipment from standard waffle-pack or 7 and 13 diameter tape-reel dispensing. the devices are attached to the circuit board using conventional solder re-flow or wave soldering procedures with rohs type or sn 63 / pb 37 type solders per table i and graph i time-temperature recommended profile. table 1: time-temperature profile for sn 60/pb40 or rohs type solders profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate 3c/second maximum 3c/second maximum (t l to t p ) preheat - temperature minimum (t smin ) 100 c 150 c - temperature maximum (t smax ) 150 c 200 c - time (minimum to maximum) (t s ) 60-120 seconds 60-180 seconds t smax to t l - ramp-up rate 3c/second maximum time maintauined above: - temperature (t l ) 183 c 217 c - time (t l) 60-150 seconds 60-150 seconds peak temperature (t p ) 225 +0 / -5c 245 +0/-5c time within 5c of actual peak temperature (t p ) 10-30 seconds 20-40 seconds ramp-down rate 6c/second maximum 6c/second maximum time 25c to peak temperature 6 minutes maximum 8 minutes maximum part number packaging mssp25250-70-w waffle-pack MSSP25250-70-R tape-reel
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 6/3/09 4 semi-scale tm pin diodes 0.065 in ( 1.65 mm ) 0.045 in minimum ( 2 pl ) ( 1.14 mm ) 0.015 in ( 0.38 mm ) + - graph1: solder re-flow time-temperature function circuit pad layout for mssp25250-70 semi-scale tm pin diode ( topview )
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 6/3/09 5 semi-scale tm pin diodes mssp25250-70 outline drawing ( case style 70 ) top view
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 6/3/09 6 semi-scale tm pin diodes mssp25250-70 ct vs v 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 0.00 5.00 10.00 15.00 20.00 25.00 30.00 35.00 40.00 volts c(pf) 100mhz 500mhz 1ghz 1.8ghz mssp25250-70 rs vs i 0.10 1.00 10.00 100.00 1000.00 0 0 . 0 0 1 0 0 . 0 1 0 0 . 1 0 1 . 0 1 0 . 0 i(ma) r(ohms) 100mhz 500mhz 1ghz mssp25025-70 parametric performance @ + 25 oc
tel: 603-641-semi (7364) ? metelics-sales@aeroflex.com ? www.aeroflex.com/metelics revision date: 6/3/09 7 semi-scale tm pin diodes mssp25250-70 rp vs v 1.0e+03 1.0e+04 1.0e+05 1.0e+06 0.0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 40.0 volts r(ohms) 100mhz 500mhz 1ghz mssp25250-70 ls vs f 0.00e+00 2.00e-11 4.00e-11 6.00e-11 8.00e-11 1.00e-10 1.20e-10 1.40e-10 1.60e-10 1.80e-10 2.00e-10 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 f(mhz) l( h ) 50ma
our passion for performance is defined by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused. revision date: 6/3/09 aeroflex / metelics, inc. east c oast op erations 54 grenier field road, londonderry, nh 03053 tel: (603) 641-3800 sales: (888) 641-semi (7364) fax: (603)-641-3500 w est c oast op erations 975 stewart drive, sunnyvale, ca 94085 tel: (408) 737-8181 fax: (408) 733-7645 aeroflex / metelics, inc. reserves the right to make changes to any products and services herein at any time without notice. consult aeroflex or an author- ized sales representative to verify that the information in this data sheet is cur- rent before using this product. aeroflex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by aeroflex; nor does the purchase, lease, or use of a product or service from aeroflex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of aeroflex or of third parties. copyright 2009 aeroflex / metelics. all rights reserved. www.aeroflex.com/metelics metelics-sales@aeroflex.com i s o 9001:2000 cpar = 0.02 pf cj = ct - cpar ls = 0.10 nh rf in rf out rs or rp device model parameter description value unit is saturation current 1.0 e-14 amps vi i-region forward bias voltage drop 0.00 volts bv breakdown voltage 400 volts un electron mobility 900 cm2/v-s wi i C region width 2.5 e-5 meters rr i-region 0v bias resistance 1.0 e+4 cmin pin punchthrough capacitance 3.0 e-13 farads tau am bipolar i-region lifetime 5.0 e-7 sec rs ohmic resistance 0.9 ? cj0 junction capacitance @ 0v 4.0 e-13 farads vj junction potential 0.70 volts m grading coefficient 1.0 none kf flicker noise coefficient 0 none af flicker noise exponent 1.0 none fc forward bias depletion capacitance coefficient 0.5 none ffe flicker noise frequency exponent 1.0 none
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