2010-05-12 page 1 rev. 1.4 1 bss123 sipmos ? small-signal-transistor product summary v ds 100 v r ds(on) 6 ? i d 0.17 a feature ? n-channel ? enhancement mode ? logic level ? d v /d t rated pg-sot23 1 2 3 vps05161 gate pin1 drain pin 3 source pin 2 marking sas sas type package pb-free tape and reel information bss123 pg-sot23 yes l6327: 3000 pcs/reel bss123 pg-sot23 yes l6433: 10000 pcs/reel maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t a =25c t a =70c i d 0.17 0.14 a pulsed drain current t a =25c i d puls 0.68 reverse diode d v /d t i s =0.17a, v ds =80v, d i /d t =200a/s, t jmax =150c d v /d t 6 kv/s gate source voltage v gs 20 v esd sensitivity (hbm) as per mil-std 883 class 1 a power dissipation t a =25c p tot 0.36 w operating and storage temperature t j , t stg -55... +150 c iec climatic category; din iec 68-1 55/150/56 ? qualified according to aec q101
2010-05-12 page 2 rev. 1.4 1 bss123 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - ambient at minimum footprint r thja - - 350 k/w electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain-source breakdown voltage v gs =0, i d =250a v (br)dss 100 - - v gate threshold voltage, v gs = v ds i d =50a v gs(th) 0.8 1.4 1.8 zero gate voltage drain current v ds =100v, v gs =0, t j =25c v ds =100v, v gs =0, t j =150c i dss - - - - 0.01 5 a gate-source leakage current v gs =20v, v ds =0 i gss - - 10 na drain-source on-state resistance v gs =4.5v, i d =0.13a r ds(on) - 4 10 ? drain-source on-state resistance v gs =10v, i d =0.17a r ds(on) - 3 6
2010-05-12 page 3 rev. 1.4 1 bss123 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. dynamic characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =0.14a 0.09 0.19 - s input capacitance c iss v gs =0, v ds =25v, f =1mhz - 55 69 pf output capacitance c oss - 8.5 10.6 reverse transfer capacitance c rss - 5 6.3 turn-on delay time t d(on) v dd =50v, v gs =10v, i d =0.17a, r g =6 ? - 2.7 4 ns rise time t r - 3.1 4.6 turn-off delay time t d(off) - 9.9 14.8 fall time t f - 25 37 gate charge characteristics gate to source charge q gs v dd =80v, i d =0.17a - 0.055 0.082 nc gate to drain charge q gd - 0.77 1.15 gate charge total q g v dd =80v, i d =0.17a, v gs =0 to 10v - 1.78 2.67 gate plateau voltage v (plateau) v dd =80v, i d = 0.17 a - 2.6 - v reverse diode inverse diode continuous forward current i s t a =25c - - 0.17 a inv. diode direct current, pulsed i sm - - 0.68 inverse diode forward voltage v sd v gs =0, i f = i s - 0.81 1.2 v reverse recovery time t rr v r =50v, i f = l s , d i f /d t =100a/s - 27.6 41.1 ns reverse recovery charge q rr - 10.5 15.7 nc
2010-05-12 page 4 rev. 1.4 1 bss123 1 power dissipation p tot = f ( t a ) 0 20 40 60 80 100 120 c 160 t a 0 0.04 0.08 0.12 0.16 0.2 0.24 0.28 0.32 w 0.38 bss123 p tot 2 drain current i d = f ( t a ) parameter: v gs 10 v 0 20 40 60 80 100 120 c 160 t a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 a 0.18 bss123 i d 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t a = 25 c 10 0 10 1 10 2 10 3 v v ds -3 10 -2 10 -1 10 0 10 1 10 a bss123 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms t p = 120.0 s 4 transient thermal impedance z thja = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 k/w bss123 z thja single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2010-05-12 page 5 rev. 1.4 1 bss123 5 typ. output characteristic i d = f ( v ds ) parameter: t j = 25 c, v gs 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v ds 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 a 0.7 i d 10v 5v 4.5v 4.1v 3.9v 3.7v 3.5v 3.1v 2.9v 2.3v 6 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j = 25 c, v gs 0 0.1 0.2 0.3 0.4 0.5 a 0.7 i d 0 2 4 6 8 10 12 14 16 ? 20 r ds(on) 2.3v 2.9v 3.1v 3.5v 3.7v 3.9v 4.1v 4.5v 5.0v 10v 7 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t j = 25 c 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gs 0 0.1 0.2 0.3 0.4 0.5 a 0.7 i d 8 typ. forward transconductance g fs = f( i d ) parameter: t j = 25 c 0 0.1 0.2 0.3 0.4 0.5 a 0.7 i d 0 0.05 0.1 0.15 0.2 0.25 0.3 s 0.4 g fs
2010-05-12 page 6 rev. 1.4 1 bss123 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.17 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 2 4 6 8 10 12 14 16 18 20 ? 24 bss123 r ds(on) typ 98% 10 typ. gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds ; i d =50a -60 -20 20 60 100 c 160 t j 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v 2.2 v gs(th) 2% typ. 98% 11 typ. capacitances c = f ( v ds ) parameter: v gs =0, f =1 mhz, t j = 25 c 0 4 8 12 16 20 24 28 v 36 v ds 0 10 1 10 2 10 3 10 pf c c rss c iss c oss 12 forward character. of reverse diode i f = f (v sd ) parameter: t j 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -3 10 -2 10 -1 10 0 10 a bss123 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2010-05-12 page 7 rev. 1.4 1 bss123 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 0 0.4 0.8 1.2 1.6 2 nc 2.8 q g 0 2 4 6 8 10 12 v 16 bss123 v gs 0.2 v ds max 0.5 v ds max 0.8 v ds max 14 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 90 92 94 96 98 100 102 104 106 108 110 112 114 v 120 bss123 v (br)dss
published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non- infringement of intellectual property rights of any third party. information for further information on technology, deliver y terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon techno logies, if a failure of such components can reasonably be expected to cause the failure of th at life-support device or system or to affect the safety or effectiven ess of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is re asonable to assume that the health of the user or other persons may be endangered. 2010-05-12 page 7 rev. 1.41 bss123 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 2010-05-12 page 7 rev. 1.41 bss123 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 2010-05-12 page 7 rev. 1.41 bss123 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 2010-05-12 page 7 rev. 1.41 bss123 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 2010-05-12 page 6 rev. 1.41 bss123 9 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 0.17 a, v gs = 10 v 2010-05-12 page 7 rev. 1.41 bss123 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 2010-05-12 page 7 rev. 1.41 bss123 13 typ. gate charge v gs = f ( q g ); parameter: v ds , i d = 0.17 a pulsed, t j = 25 c 2010-05-12 pag 8 bss123
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