cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 1/8 BSS123N3 cystek product specification n-channel mosfet bv dss 100v i d 1.7a v gs =10v, i d =700ma 290m v gs =4v, i d =400ma 310m v gs =10v, i d =170ma 260m v gs =4v, i d =170ma 280m r dson(typ) BSS123N3 description the BSS123N3 is a n-channel enhancement-mode mosfet. features ? low on-resistance ? high speed switching ? low-voltage drive(2.5v) ? easily designed drive circuits ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping BSS123N3-0-t1-g sot-23 (pb-free lead plating and halogen-free package) 3000 pcs / tape & reel BSS123N3 sot-23 s d g g gate s source d drain environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t1 : 3000 pc s / tape & reel,7? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 2/8 BSS123N3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v continuous i d 1.7 a drain current pulsed i dp 6.8 *1 a total power dissipation p d 1.38 *2 w channel temperature t ch +150 c storage temperature tstg -55~+150 c note : *1. pulse width 300 s, duty cycle 2% *2. when the device is surface mounted on 1 in2 copper pad of fr-4 board with 2 oz. copper. thermal performance parameter symbol limit unit thermal resistance, junction-to-ambient rth,ja 90 c/w note : surface mounted on 1 in2 copper pad of fr-4 board, 350 c/w when mounted on minimum copper pad. electrical characteristics (ta=25 c) symbol min. typ. max. unit test conditions static bv dss* 100 - - v v gs =0, i d =10 a v gs(th) 1 - 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0 i dss - - 1 a v ds =100v, v gs =0 - 290 400 i d =700ma, v gs =10v - 310 450 i d =400ma, v gs =4v - 260 400 i d =170ma, v gs =10v r ds(on)* - 280 400 m i d =170ma, v gs =4v g fs 0.08 1 - s v ds =10v, i d =170ma dynamic c iss - 512 - c oss - 15 - c rss - 11 - pf v ds =25v, v gs =0, f=1mhz td (on) - 3.1 - tr - 1.2 - td (off) - 9.7 - tf - 1.4 - ns v dd =30v, i d =1.7a, v gs =10v, r gen =6 qg - 3.6 - qgs - 1.8 - qgd - 0.6 - nc v dd =30v, i d =1.7a, v gs =10v
cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 3/8 BSS123N3 cystek product specification source-drain diode *i s - - 1.7 *i sm - - 6.8 a *v sd - - 1.2 v v gs =0v, i sd =1a *pulse test : pulse width 380 s, duty cycle 2% recommended soldering footprint
cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 4/8 BSS123N3 cystek product specification typical characteristics typical output characteristics 0 1 2 3 4 5 6 7 8 0123456 drain-source voltage -vds(v) drain current - id(a) 10v 8v 7v 6v 4.5v 4v 3.5v vgs=3v breakdown voltage vs junction temperature 100 110 120 130 140 -60 -40 -20 0 20 40 60 80 100 120 140 160 junction temperature-tj(c) breakdown voltage -bvdss(v) id=250a static drain-source on-state resistance vs drain current 100 1000 10000 0.001 0.01 0.1 1 drain current-id(a) static drain-source on-state resistance-rds(on)(m) vgs=3v vgs=4.5v vgs=10v vgs=2.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 reverse drain current -idr(a) source-drain voltage-vsd(v) tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 100 200 300 400 500 600 700 800 900 1000 024681 0 drain-source on-state resistance vs junction tempearture 100 150 200 250 300 350 400 450 500 550 600 650 700 -60 -20 20 60 100 140 180 junction temperature-tj(c) static drain-source on-state resistance-rds(on)(m) vgs=10v, id=170ma vgs=4v, id=400ma vgs=10v, id=700ma gate-source voltage-vgs(v) static drain-source on-state resistance-rds(on)(m) id=700ma id=400ma
cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 5/8 BSS123N3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 0 5 10 15 20 25 30 35 drain-source voltage -vds(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 junction temperature-tj(c) threshold voltage-vgs(th)(v) id=250ua gate charge characteristics 0 2 4 6 8 10 12 01234 5 typical transfer characteristics 0 1 2 3 4 5 6 7 8 051 0 gate-source voltage-vgs(v) drain current -id(a) total gate charge---qg(nc) gate-source voltage---v gs (v) i d =1.7a v ds =70v v ds =50v v d s =30v 1 5 vds=5v maximum safe operating area 0.01 0.1 1 10 0.1 1 10 100 1000 drain-source voltage -vds(v) drain current --- id(a) rds(on) limited ta=25c, single pulse, mounted on a 1 in 2 fr-4 boad with 2 oz. copper. r ja =90c/w dc 100ms 10ms 1ms 100 s power derating curve 0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) mounted on a 1 in 2 fr board with 2 oz. copper
cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 6/8 BSS123N3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 7/8 BSS123N3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c580n3 issued date : 2011.09.16 revised date : 2013.10.17 page no. : 8/8 BSS123N3 cystek product specification sot-23 dimension *:typical inches millimeters inches millimeters dim min. max. min. max. marking: dim min. max. min. max. a 0.1102 0.1204 2.80 3.04 j 0.0035 0.0071 0.09 0.18 b 0.0472 0.0669 1.20 1.70 k 0.0276 ref 0.70 ref c 0.0335 0.0512 0.89 1.30 l 0.0374* 0.95* d 0.0118 0.0197 0.30 0.50 s 0.0830 0.1161 2.10 2.95 g 0.0669 0.0910 1.70 2.30 v 0.0098 0.0256 0.25 0.65 h 0.0004 0.0040 0.01 0.10 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . h j k d a l g v c b 3 2 1 s style : pin 1.gate 2.source 3.drain 3-lead sot-23 plastic surface mounted package cystek package code: n3 sa device code date code
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