2007. 4. 24 1/3 semiconductor technical data KTK920T revision no : 1 rf switching for vcr tuner features low loss at on state(typ 1db@1ghz) with built-in bias diode fet maximum ratings (ta=25 ) dim millimeters a b d e tsq 2.9 0.2 1.6+0.2/-0.1 0.70 0.05 0.4 0.1 2.8+0.2/-0.3 1.9 0.2 0.16 0.05 0.00-0.10 0.25+0.3/-0.15 c f g h i j k 0.60 a f d b e c k h i 2 14 3 + _ + _ + _ + _ + _ + 0.1 _ 0.55 + 0.1 _ g i 1. diode cathode 2. fet gate & diode anode 3. fet drain 4. fet source type name marking lot no. ma n channel mos field effect transistor equivalent circuit characteristic symbol rating unit drain-source-voltage v ds 3 v drain-gate-voltage v dg 7 v source-gate-voltage v sg 7 v drain current i d 10 ma characteristic symbol rating unit collector power dissipation p c * 0.9 w junction temperature t j 150 storage temperature range t stg -55~150 characteristic symbol rating unit reverse voltage v r 35 v forword current i f 100 ma fet diode maximum ratings (ta=25 ) diode maximum ratings (ta=25 ) * package mounted on a ceramic board (600 0.8 )
2007. 4. 24 2/3 KTK920T revision no : 1 characteristic symbol test conditions min typ max unit gate-source breakdown voltage v (br)gss v ds =0, i gs =-0.1ma 7 - - v gate-source pinch-off voltage v gs(off) v ds =1v, i d =20 a - -3 -4 v drain-source leakage current i dsx v ds =2v, v gs =-5v - - 10 a gate cut-off current i gss v ds =0, v gs =-5v - - -100 na drain-source on-state resistance r ds(on) v gs =0, i d =1ma - 12 20 loss(on-state) s 21(on) 2 v sc =v dc =0, r s =r l =50 , i f =0, f 1ghz - - 2 db v sc =v dc =0, r s =r l =50 , i f =0, f=1ghz - 1.3 - db v sc =v dc =0, r s =r l =75 , i f =0, f 1ghz - - 3 db isolation (off-state) s 21(off) 2 v sc =v dc =5v, r s =r l =50 , i f =1ma, f 1ghz 30 - - db v sc =v dc =5v, r s =r l =50 , i f =1ma, f= 1ghz - 38 - db v sc =v dc =5v, r s =r l =75 , i f =1ma, f 1ghz 30 - - db input capacitance note1 c ic v sc =v dc =5v, i f =1ma, f=1mhz - 1 - pf v sc =v dc =0, i f =0, f=1mhz - 0.65 - pf output capacitance note1 c oc v sc =v dc =5v, i f =1ma, f=1mhz - 1 - pf v sc =v dc =0, i f =0, f=1mhz - 0.65 - pf diode electrical characteristics (ta=25 ) 50 ? input 4.7k ? 47k ? 1nf 1nf 1nf 100k ? 100k ? v v on-state : v=0v off-state : v=5v 50 ? outpu t 1nf fig. s 21(on) 2 s 21(off) 2 test circuit note : 1 c ic is the series connection of c sg and cgc; c oc is the series connection of c dg and cgc; characteristic symbol test conditions min typ max unit forward voltage v f i f =2ma - - 0.85 v reverse current i r v r =15v - - 0.1 reverse voltage v r i r =1 35 - - v total capacitance c t v r =6v, f=1mhz - 0.7 1.2 pf series resistance r s i f =2ma, f=100mhz - 0.5 0.9 fet electrical characteristics (ta=25 )
2007. 4. 24 3/3 KTK920T revision no : 1 -1 -2 0 0 -4 -3 0800 400 1200 -20 -40 -60 0800 400 1200 frequency f (mhz) frequency f (mhz) s 21(on) 2 - f s 21(off) 2 - f loss (on-state) s 21(on) 2 (db) isolation (off-state) s 21(off) 2 (db) v sc =v dc =0v, r s =r l =50 ? i f = 0ma measured in test circuit (fig.) v sc =v dc =5v, r s =r l =50 ? , i f = 1ma measured in test circuit (fig.)
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