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| savantic semiconductor product specification silicon npn power transistors tip35/35a/35b/35c description with to-3pn package complement to type tip36/36a/36b/36c dc current gain h fe =25(min)@i c =1.5a applications designed for use in general purpose power amplifier and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (t c = ) symbol parameter conditions value unit tip35 40 tip35a 60 tip35b 80 v cbo collector-base voltage TIP35C open emitter 100 v tip35 40 tip35a 60 tip35b 80 v ceo collector-emitter voltage TIP35C open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 25 a i cm collector current-peak 40 a i b base current 5 a p c collector power dissipation t c =25 125 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors tip35/35a/35b/35c characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit tip35 40 tip35a 60 tip35b 80 v (sus)ceo collector-emitter sustaining voltage TIP35C i c =30ma ;i b =0 100 v v ce (sat) -1 collector-emitter saturation voltage i c =15a ;i b =1.5a 1.8 v v ce (sat) -2 collector-emitter saturation voltage i c =25a; i b =5a 4.0 v v be-1 base-emitter on voltage i c =15a ; v ce =4v 2.0 v v be-2 base-emitter on voltage i c =25a ; v ce =4v 4.0 v tip35/35a v ce =30v; i b =0 i ceo collector cut-off current tip35b/35c v ce =60v; i b =0 1.0 ma tip35 v ce =40v;v eb =0 tip35a v ce =60v;v eb =0 tip35b v ce =80v;v eb =0 i ces collector cut-off current TIP35C v ce =100v;v eb =0 0.7 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe-1 dc current gain i c =1.5a ; v ce =4v 25 h fe-2 dc current gain i c =15a ; v ce =4v 15 75 f t transition frequency i c =1a ; v ce =10v 3 mhz savantic semiconductor product specification 3 silicon npn power transistors tip35/35a/35b/35c package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) savantic semiconductor product specification 4 silicon npn power transistors tip35/35a/35b/35c |
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