q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A ? variable frequency operation ? low start-up current(typ.100ua ) ? pulse by pulse current limiting ? over current protection ? over voltage protection (min. 20) ? internal thermal shutdown function ? under voltage lockout ? internal high voltage sense fet ? auto-restart mode ? frequency modulation for low emi ? advanced burst-mode operation features SPGP0280A ( semihow power switch ) application ? smps for stb, svr, dvd & dvcd ? smps for printer, facsimile & scanner ? adaptor the semihow power switch product family is specially designed for an off-line smps with minimal external components. the semihow power switch consists of a high voltage power sensefet and a current mode pwm ic. it has a basic platform well suited for the cost effective design in either a flyback converter description internal block diagram may 2013
q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A symbol parameter value units v dss drain-source voltage 800 9 i d drain current ? continuous (t c = 25 zq 2.0 $ drain current ? continuous (t c = 100 zq 1.3 $ i dm drain current ? pulsed (note 1) 8 $ v gs gate-source voltage 30 9 e as single pulsed avalanche energy (note 2) 90 p - v cc(max) maximum supply voltage 20 9 v fb analog input voltage range -0.3 to v sd 9 p d power dissipation (t c = 25 ) - derate above 25 35 : 0.28 :
t j operating junction temperature +160
t a operating ambient temperature -25 to +85
t stg storage temperature range -55 to +150
absolute maximum ratings ta=25 q c, unless otherwise specified notes : 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=51mh, i as =2.0a, v dd =50v, r g =25 : , starting t j =25 q c
q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A notes : 1. pulse test : pulse width ? v ' x w \ & \ f o h ? 2. symbol parameter test conditions min typ max units r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.0 a q -- 5.6 7.0
5 on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 50 o 800 -- -- 9 i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v q -- -- 250 o v ds = 640 v, t c = 125 q -- -- 1000 o off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz q -- 480 620 a c oss output capacitance -- 45 60 a c rss reverse transfer capacitance -- 8.5 11.0 a dynamic characteristics t d(on) turn-on time v ds = 400 v, i d = 2.0 a, r g = 25
5 -- 20 -- t r turn-on rise time -- 30 -- t d(off) turn-off delay time -- 45 -- t f turn-off fall time -- 30 -- q g total gate charge v ds = 400v, i d = 2.0 a, v gs = 10 v -- 12 16 q & q gs gate-source charge -- 3.0 -- q & q gd gate-drain charge -- 4.5 -- q & switching characteristics electrical characteristics ( sensefet part ) ta=25 q c, unless otherwise specified r s 1
q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A notes : 1. these parameters, although guaranteed, are not 100% tested in production 2. these parameters, although guaranteed, are tested in eds(water test) process symbol parameter test conditions min typ max units v start start threshold voltage v fb = gnd q 14 15 16 9 v stop stop threshold voltage v fb = gnd q 8.4 9 9.6 9 uvlo section f osc initial accuracy 57 64 71 . + ] -- frequency change with temperature (note 2) -25 c d ta d +85 c -- r 5 r 10 d max maximum duty cycle 73 77 82 oscillator section i fb feedback source current ta=25 c, 0v6.5v q 5.4 6 6.6 9 i delay shutdown delay current ta=25 c, 5v g vfb g v sd q 456 p $ feedback section reference section electrical characteristics ( control part ) ta=25 q c, unless otherwise specified v ref reference output voltage (note 1) ta=25 c q 4.8 5 5.2 9 vref/ ' t temperature stability (note 1 , 2) -25 c d ta d +85 c -- 0.3 0.6 mv/ c i over peak current limit max. inductor current 1.05 1.2 1.34 $ protection section v ovp over voltage protection v cc ! 20v q 20 -- 23 9 t sd thermal shutdown temperature (tj) (note 1) -- 140 160 -- c protection section i start start-up current v cc = 14v q -- 100 170 p $ i op operating supply current (control part only) v cc 20v q -- 3 6 p $
q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 03691215 0 2 4 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v * note : i d = 2.0a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 300 600 900 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 01234 0 4 8 12 v gs = 20v v gs = 10v
note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] typical characteristics ( sensefet part ) 246810 0.1 1 10 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.4 0.6 0.8 1.0 0.1 1 10 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5
note : 1. v gs = 10 v 2. i d = 1.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve t 2 t 1 p dm typical characteristics ( sensefet part ) (continued) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * notes : 1. z t jc (t) = 3.57 o c/w max. 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z t jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z t jc (t), thermal response t 1 , square wave pulse duration [sec] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A typical performance characteristics ( control part ) (continued) (these characteristic graphs are normalized at ta=25 q c) figure 1. operating frequency figure 2. feedback source current -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 fosc -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 ifb -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 iop -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 vstart -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 vstop -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 vovp figure 3. operating supply current figure 4. start up current figure 5. start threshold voltage figure 6. stop threshold voltage figure 7. over voltage protection -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 istart
q?v~zy??q?v?_?}z~z}r??q~?aqcabdq SPGP0280A package dimension
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