copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 features ultrafast recovery time low forward voltage drop 150 c operating junction temperature low leakage current designed and qualified according to jedec - jesd47 d iode absolute maximum ratings 1/4 v r : 620v i f(av) : 50a v f at i f : 1.5v sw5 0cpf06 samwin item sales type marking package packaging 1 sw w 50 cpf06 sw50 cpf06 to - 3 p tube order codes symbol parameter value unit v r repetitive peak reverse voltage 620 v i f(av) average rectified forward current (@t c =150 o c) 50 a t j , t stg operating junction and storage temperatures - 55 ~ + 150 o c general description this fred is designed with optimized performance of forward voltage drop and ultrafast recovery time . the platinum doped life time control, guarantee the best overall performance ruggedness and reliability characteristics . this devices are intended for use in the output rectification stage of smps, ups, dc/dc converters as freewheeling diode in low voltage inverters . their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element . 1. anode 2. gathode 3. anode 1 2 3 to - 3 p electrical characteristic ( t c = 25 o c unless otherwise specified ) symbol parameter test conditions min. typ. max. unit v r breakdown voltage,blocking voltage i r =100ua 620 v v f forward voltage i f =3a 0.9 1.13 v i f =50a 1.5 v i f =50a, t j = 150 c 1.3 v i r reverse leakage current v r =600v 500 n a v r =600v, t j = 150 c 500 u a ct junction capacitance v r =600v 30 pf
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 dynamic recovery characteristics (tj= 25 c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i rrm peak recovery current i f =50a, di / dt =200a/us, v r =100v 5.9 a t rr reverse recovery time 59 ns q rr reverse recovery charge 190 n c samwin 2/4 sw5 0cpf06 thermal - mechanical specifications symbol parameter value unit r thjc thermal resistance, junction to case (per leg) 0.57 o c/w r thjc thermal resistance, junction to case (per package) 0.62 o c /w r thja thermal resistance, junction to ambient(per leg) 35.5 o c /w r thja thermal resistance, junction to ambient(per package) 34.3 o c /w fig. 1. typical forward voltage drop characteristics fig. 2. typical values of reverse current vs. reverse voltage fig. 3. typical junction capacitance vs. reverse voltage fig. 4. max. thermal impedance z thjc characteristics (per leg)
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 3/4 samwin sw50 cpf06 fig. 6. typical reverse recovery current vs. di/dt fig 5. max. thermal impedance z thjc characteristics (per package) fig. 7. typical reverse recovery time vs. di/dt fig. 8. typical stored charge vs. di/dt fig. 9. reverse recovery parameter test circuit & waveform *. dv/dt controlled by rg *. is controlled by pulse period v gs (driver) i f (dut) v r (dut) body diode forward voltage drop v f diode recovery dv/dt i rm di/dt 10v diode reverse current v dd
copyright@ semipower electronic technology co., ltd. all rights reserved. may. 2014. rev.2.0 4/4 samwin sw50 cpf06 fig. 10. unclamped inductive test circuit
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