 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| symbolv ds v gs i dm i ar e ar t j , t stg symbol typ max 19.6 25 50 60 r jc 1 1.5 a t a =70c 13 continuous draincurrent a t a =25c i dsm 17 a repetitive avalanche energy l=0.3mh c 135 mj maximum junction-to-case d steady-state c/w thermal characteristicsparameter units maximum junction-to-ambient a t 10s r ja c/wc/w absolute maximum ratings t a =25c unless otherwise noted vv 20 pulsed drain current c power dissipation b t c =25c gate-source voltage drain-source voltagemaximum junction-to-ambient a steady-state 8581 200 avalanche current c 30 power dissipation a t a =25c p dsm continuous draincurrent b maximum units parameter t c =25c h t c =100c 30 w junction and storage temperature range a p d c 100 50 -55 to 175 t c =100c i d 2.1 w t a =70c 1.3 AOL1700n-channel enhancement mode field effect transistor features v ds (v) = 30v i d =85a (v gs = 10v) r ds(on) < 4.2m (v gs = 10v) r ds(on) < 6.0m (v gs = 4.5v) uis tested!rg,ciss,coss,crss tested general description srfet tm AOL1700 uses advanced trench technology with a monolithically integrated schottkydiode to provide excellent r ds(on) ,and low gate charge. this device is suitable for use as a low sidefet in smps, load switching and general purpose applications. -rohs compliant -halogen and antimony free green device* ultra so-8 tm top view bottom tabconnected to drain s g d d s g srfet tm s oft r ecovery mos fet : integrated schottky diode srfet tm alpha & omega semiconductor, ltd. www.aosmd.com
"#$%&& 7 9 ': ! " ' " '%/ % !(" 9;<: > > >8 + ( c 8 > #c 8 #c > #c ( f ( 9: > f ( 9>: f ( f (/ 9: 8 9bb: > b 8 f , 5;? , 7 < < < f?*c c; , ;<? g 55* ;< ; ? * ;5;< < < *c ?55; ; h <; ? ,;i ; ; <; ? ;c ?, 55* ;< ; ? ;c 5;? ; , , ; 5; 5;? < c?< ;< < *7* h 1 ,;? <; 7/) /" "$" " "&$" ) +" 7/) /" "$" " "&$" ) '! (" c /0/ 0 ! . &" 7 "!a/6 % !(" ; ! " / ! & " + "$" " ! b" !#!& !&" c /0/ 0 ) 1 2 !3 4 )) ! i" ! " % !(" ! " + 4 ! ".7/) %"!a!(" & " 9;<: ! & ! . &" ;." !&" c 6! / ! &/ & !&" /" c 6! / % !(" !- + + 7/). /" j &' a) /" " , # !#!& !&" ; # !#!& !&" -5' 4 )) + > .; " +" .;bb "%!) +" * < .;bb c!%% +" .; "%!) +" !% ! " '! (" ! " ! '! (" b,k 6474', )) !% ! " '! (" ! " &" '! (" ! " " !&" b,k e '" $!% " b l +"! "/ 6 ' '" /"$ &" ! %% ! "$ +" 6 ' '" #6" / #! 5 !/ & " ! ( ! " 2! "/ 9m: ( "!/). ! " n & . .!+2 " '" +!% " !&" 7 '" #6" / #! 5 2! "/ 9m: ( n & . .&! " '" +!% " !&" !/ + " "b % " ( '" ##" / #! % + b &! " 6'" " !// !% '"! a ( "/ e "#" $" ! ( # % " 6 / ' % + "/ 2) n & "+#" ! " 9m: '" l '" + b '" '" +!% +#"/"&" b + n & &! " l !/ &! " !+2 " '" ! & &'! !& " & c ( " ! " 2 ! "/ ( = # % " / ) &)&%" o +!- c '" " & $" ! " 2! "/ '" n & . .&! " '" +!% +#"/"&" 6' &' +"! "/ 6 ' '" /"$ &" + "/ ! %! (" '"! a ! + ( ! +!- + + n & "+#" ! " b 9m: '" ; & $" # $ /" ! (%" # % " ! ( '" " " ! " #" b +"/ 6 ' '" /"$ &" + "/ c.> 2! / 6 ' k ##" ! %% ! "$ +" 6 ' , '" +!- + + & " ! ( % + "/ 2) 2/.6 " d ' /"$ &" ( ! ! ""/ ( "" !b " /! " &/" 85 9 " 8: rev3: dec 2008 ." !/#!0 0 !0 AOL1700 typical electrical and thermal characteristics 0 25 50 75 100 125 150 175 200 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 3.5v v gs =3.0v 7v 10v 4.5v 4.0v 6v 5v 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics i d (a) 2 3 4 5 6 7 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 2 0 30 60 90 120 150 180 210 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance i d =20a v gs =10v v gs =4.5v 2 3 4 5 6 7 8 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125 v ds =5v v gs =4.5v v gs =10v i d =20a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com AOL1700 typical electrical and thermal characteristics 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 10ms 1ms dc r ds(on) limited t j(max) =175c t c =25c 100 100ms 0 2 4 6 8 10 0 10 20 30 40 50 60 70 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0.00e+00 1.00e-09 2.00e-09 3.00e-09 4.00e-09 5.00e-09 6.00e-09 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (nf) c iss 80 100 120 140 160 180 200 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- case (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 11: normalized maximum transient thermal impedance (note f) z ? jc normalized transient thermal resistance c oss c rss v ds =15v i d =20a single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc r jc =1.5c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175c t c =25c alpha & omega semiconductor, ltd. www.aosmd.com AOL1700 typical electrical and thermal characteristics 0 20 40 60 80 100 120 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 time in avalanche, t a (s) figure 12: single pulse avalanche capability i d (a), peak avalanche current 0 10 20 30 40 50 60 70 80 90 100 110 0 25 50 75 100 125 150 175 t case (c) figure 13: power de-rating (note b) power dissipation (w) t c =25c 0 20 40 60 80 100 0 25 50 75 100 125 150 175 t case (c) figure 14: current de-rating (note b) current rating i d (a) 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure15: single pulse power rating junction-to- ambient (note g) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal impedance (note g) z ? ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =60c/w t on t p d in descending orderd=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t c =150c t j(max ) =150c t a =25c alpha & omega semiconductor, ltd. www.aosmd.com AOL1700 vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery tes t circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt t rr ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off alpha & omega semiconductor, ltd. www.aosmd.com |
Price & Availability of AOL1700
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |