advanced power n-channel enhancement mode electronics corp. power mosfet fast switching characteristic bv dss 60v single drive requirement r ds(on) 100m surface mount package i d 3.6a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a 62.5 /w data and specifications subject to change without notice total power dissipation 2 -55 to 150 maximum thermal resistance, junction-ambient 3 thermal data parameter gate-source voltage 20 continuous drain current 3 , v gs @ 10v 3.6 continuous drain current 3 , v gs @ 10v 2.9 pulsed drain current 1 1 30 operating junction temperature range -55 to 150 linear derating factor 0.016 storage temperature range 201207071 AP9977AGM rohs-compliant product parameter rating drain-source voltage 60 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 g1 s2 g2 d1 d1 d2 d2 so-8 g2 d2 s2 g1 d1 s1 the so-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =3a - - 100 m v gs =4.5v, i d =2a - - 165 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =3a - 2.7 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 10 ua drain-source leakage current (t j =70 o c) v ds =48v ,v gs =0v - - 25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =3a - 7 12 nc q gs gate-source charge v ds =48v - 1 - nc q gd gate-drain ("miller") charge v gs =10v - 2.3 - nc t d(on) turn-on delay time 2 v ds =30v - 3 - ns t r rise time i d =1a - 7.5 - ns t d(off) turn-off delay time r g =3.3 ? v gs =10v - 13 - ns t f fall time r d =30 - 2.5 - ns c iss input capacitance v gs =0v - 210 340 pf c oss output capacitance v ds =25v - 35 - pf c rss reverse transfer capacitance f=1.0mhz - 25 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.5a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =3a, v gs =0 v , - 20 - ns qrr reverse recovery charge di/dt=100a/s - 16 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 : /w when mounted on min. copper pad. this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. 2 AP9977AGM this product has been qualified for consumer market. applications or uses as criterial component in life support
ap9977ag m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 4 8 12 16 20 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =25 o c 10v 7.0v 5.0v 4.5v v g =4.0v 0.8 1.2 1.6 2 2.4 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) 0 4 8 12 16 20 0123456 v ds , drain-to-source voltage (v) i d , drain current (a) t a =150 o c v g =4.0v 10v 7.0v 5.0v 4.5v 0 2 4 6 8 10 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v g =10v i d =3a 60 80 100 120 140 246810 v gs , gate-to-source voltage (v) r dson (m ) i d =2a t a =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9977AGM 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz ciss crss coss 0 2 4 6 8 10 12 0246810 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =48v i d =3a t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 135 : /w 0.02
package outline : so-8 millimeters symbols min nom max a 1.35 1.55 1.75 a1 0.10 0.18 0.25 b 0.33 0.41 0.51 c 0.19 0.22 0.25 d 4.80 4.90 5.00 e1 3.80 3.90 4.00 e 5.80 6.15 6.50 l 0.38 0.71 1.27 0 4.00 8.00 e 1.all dimension are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : so-8 1.27 typ advanced power electronics corp. c detail a a1 a 9977a g m ywwsss package code part numbe r detail a l date code (ywwsss) y last digit of the year ww week sss sequence e b 1 34 5 6 7 8 2 d e1 e meet rohs requirement
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