?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt 1 1.base 2.collector 3.emitter 1 npn triple diffused planar silicon transistor absolute maximum ratings t c =25 c unless otherwise noted * pulse test : pulse width = 5ms, duty cycle 10% thermal characteristics t c =25 c unless otherwise noted symbol parameter value units v cbo collector-base voltage 1200 v v ceo collector-emitter voltage 600 v v ebo emitter-base voltage 12 v i c collector current (dc) 2 a i cp *collector current (pulse) 4 a i b base current (dc) 1 a i bp *base current (pulse) 2 a p c collector dissipation (t c =25 c) 50 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c eas avalanche energy(t j =25 c) 2.5 mj symbol characteristics rating unit r jc thermal resistance junction to case 2.5 c/w r ja junction to ambient 62.5 t l maximun lead temperature for soldering purpose : 1/8? from case for 5 seconds 270 c ksc5502d/ksc5502dt high voltage power switch switching application ? wide safe operating area ? built-in free-wheeling diode ? suitable for electronic ballast application ? small variance in storage time ? two package choices : d-pak or to-220 d-pak to-220 c b e equivalent circuit
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min. typ. max. units bv cbo collector-base breakdown voltage i c =1ma, i e =0 1200 1350 v bv ceo collector-emitter breakdown voltage i c =5ma, i b =0 600 750 v bv ebo emitter-base breakdown voltage i e =500 a, i c =0 12 13.7 v i ces collector cut-off current v ces =1200v, v be =0 t c =25 c 100 a t c =125 c 500 i ceo collector cut-off current v ce =600v, i b =0 t c =25 c 100 a t c =125 c 500 i ebo emitter cut-off current v eb =12v, i c =0 t c =25 c10 a h fe dc current gain v ce =1v, i c =0.2a t c =25 c152840 t c =125 c8 18 v ce =1v, i c =1a t c =25 c46.4 t c =125 c3 4.7 v ce =2.5v, i c =0.5a t c =25 c122030 t c =125 c6 12 v ce (sat) collector-emitter saturation voltage i c =0.2a, i b =0.02a t c =25 c0.310.8v t c =125 c0.541.1v i c =0.4a, i b =0.08a t c =25 c0.150.6v t c =125 c0.231.0v i c =1a, i b =0.2a t c =25 c0.401.5v t c =125 c1.33.0v v be (sat) base-emitter saturation voltage i c =0.4a, i b =0.08a t c =25 c0.771.0v t c =125 c0.600.9v i c =1a, i b =0.2a t c =25 c0.831.2v t c =125 c0.701.0v c ib input capacitance v eb =8v, i c =0, f=1mhz 385 500 pf c ob output capacitance v cb =10v, i e =0, f=1mhz 60 100 pf f t current gain bandwidth product i c =0.5a,v ce =10v 11 mhz v f diode forward voltage i f =0.2a t c =25 c0.751.2v t c =125 c0.59 v i f =0.4a t c =25 c0.801.3v t c =125 c0.64 v i f =1a t c =25 c0.91.5v
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt electrical characteristics t c =25 c unless otherwise noted symbol parameter test condition min typ. max. units t fr diode froward recvery time (di/dt=10a/ s) i f =0.2a i f =0.4a i f =1a 650 740 785 ns ns ns v ce (dsat) dynamic saturation voltage i c =0.4a, i b1 =80ma v cc =300v @ 1 s7.2v @ 3 s1.8v i c =1a, i b1 =200ma v cc =300v @ 1 s18v @ 3 s6v resistive load switching (d.c < 10%, pulse width=20s) t on turn on time i c =0.4a, i b1 =80ma i b2 =0.2a, v cc =300v r l = 750 ? t c =25 c 175 350 ns t c =125 c 185 ns t off turn off time t c =25 c2.13.0 s t c =125 c2.6 s t on turn on time i c =1a, i b1 =160ma i b2 =160ma, v cc =300v r l = 300 ? t c =25 c 240 450 ns t c =125 c 310 ns t off turn off time t c =25 c3.75.0 s t c =125 c4.5 s inductive load switching (v cc =15v) t stg storage time i c =0.4a, i b1 =80ma i b2 =0.2a, v z =300v l c =200h t c =25 c1.22.0 s t c =125 c1.5 s t f fall time t c =25 c 90 200 ns t c =125 c65 ns t c cross-over time t c =25 c 185 350 ns t c =125 c 145 ns t stg storage time i c =0.8a, i b1 =160ma i b2 =160ma, v cc =300v l c =200h t c =25 c3.34.5 s t c =125 c3.75 s t f fall time t c =25 c 90 250 ns t c =125 c 160 ns t c cross-over time t c =25 c 300 600 ns t c =125 c 570 ns
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics figure 1. static characteristic figure 2. dc current gain figure 3. collector-emitter saturation voltage figure 4. collector-emitter saturation voltage figure 5. typical collector saturation voltage figure 6. base-emitter saturation voltage 01234567 0 1 2 3 1a 900ma 800ma 700ma 600ma 500ma 400ma 300ma i b =100ma 200ma i c [a], collector current v ce [v], collector emitter voltage 1m 10m 100m 1 1 10 100 v ce =1v t j =25 t j =125 h fe , dc current gain i c [a], collector current) 1m 10m 100m 1 0.1 1 10 i c =5i b t j =25 t j =125 v ce(sat) (v), voltage i c (a), collector current 1m 10m 100m 1 0.1 1 10 i c =10i b t j =25 t j =125 v ce(sat) (v), voltage i c (a), collector current 1m 10m 100m 1 0 1 2 t j =25 2.0a 1.5a 1.0a 0.4a i c =0.2a v ce [v], voltage i b [a], base current 1m 10m 100m 1 0.1 1 10 i c =10i b t j =25 t j =125 v be [v], voltage i c [a], collector current
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics (continued) figure 7. base-emitter saturation voltage figure 8. diode forward voltage figure 9. collector output capacitance figure 10. resistive switching time, t on figure 11. resistive switching time, t off figure 12. resistive switching time, t on 1m 10m 100m 1 0.1 1 10 i c =5i b t j =25 t j =125 v be [v], voltage i c [a], collector current 1m 10m 100m 1 0.1 1 10 t j =25 t j =125 v fd [v], voltag e i fd [a], forward current 1 10 100 10 100 1000 f=1mhz c ob c ib capacitance[pf] reverse voltage[v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =2i b2 v cc =300v pw=20us t j =25 t j =125 t on [ns],time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 1 1 1.5 2 2.5 3 3.5 4 4.5 5 i c =5i b1 =2i b2 v cc =300v pw=20us t j =25 t j =125 t on (us),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =5i b2 v c =300v pw=20us t j =25 t j =125 t on (ns),time i c [a], collector current
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics (continued) figure 13. resistive switching time, t off figure 14. inductive switching time, t stg figure 15. inductive switching time, t f figure 16. inductive switching time, t c figure 17. inductive switching time, t stg figure 18. inductive switching time, t f 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 i c =5i b1 =5i b2 v c =300v pw=20us t j =25 t j =125 t on (us),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 1 1 1.5 2 2.5 3 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t stg (us),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 40 45 50 55 60 65 70 75 80 85 90 95 100 50 100 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t f (ns),time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 150 200 250 300 350 400 450 500 550 600 i c =5i b1 =2i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t c [ns],time i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 2 2.5 3 3.5 4 4.5 5 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t stg [us],tim e i c [a], collector current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 50 60 70 80 90 100 100 200 300 400 500 600 700 800 900 1000 1000 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t f [ns],time i c [a], collector current
?2001 fairchild semiconductor corporation ksc5502d/ksc5502dt rev. a2, august 2001 typical characteristics (continued) figure 19. inductive switching time, t c figure 20. inductive switching time, t stg figure 21. inductive switching time, t f figure 22. inductive switching time, t c figure 23. forward bias safe operating area figure 24. power derating 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 123 100 100 200 300 400 500 600 700 800 900 1000 1000 2000 i c =5i b1 =5i b2 v cc =15v v z =300v l c =200uh t j =25 t j =125 t stg [ns],time i c [a], collector current 4 5 6 7 8 9 10 11 12 13 14 1 2 i c =2i b2 v cc =15v v z =300v l c =200uh i c =0.4a i c =0.8a t j =25 t j =125 t stg , time[us] h fe , forced gain 4567891011121314 40 60 80 i c =2i b2 v cc =15v v z =300v l c =200uh i c =0.4a i c =0.8a t j =25 t j =125 t f , time[ns] h fe , forced gain 4 5 6 7 8 9 10 11 12 13 14 80 120 160 200 i c =2i b2 v cc =15v v z =300v l c =200uh i c =0.4a i c =0.8a t j =25 t j =125 t c , time[ns] h fe , forced gain 10 100 1000 0.01 0.1 1 10 t c =25 50us 1ms 5ms dc i c [a], collector current v ce [a], collector emitter voltage 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 p c [w ], pow er dissipation t c ( ), case temperature
?2001 fairchild semiconductor corporation rev. a2, august 2001 ksc5502d/ksc5502dt typical characteristics (continued) figure 25. forward bias safe operating area figure 26. power derating 10 100 1000 0.01 0.1 1 10 t c =25 50us 1ms 5ms dc i c [a], collector current v ce [a], collector emitter voltage 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 p c [w ], pow er dissipation t c ( ), case temperature
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