d2706 ti im b8-9145 no.a0082-1/9 LB11660RV overview the LB11660RV is a single-phase bipolar half pre-driver that can achieve high-efficient direct pwm drive with ease. it is ideal for driving small-sized cooling fans used in servers. the LB11660RV is provided with the rd (lock detection) output pin and the lb11660fv the fg (rotational speed detection) output pin, respectively. features ? single-phase full-wave drive (15v-1.5a output transistor built in) upper output tr incorporated half pre-driver. ? variable speed control by an external signal. separately-excited upper tr direct pwm control method, enabling silent, low-vibration variable speed control. ? lowest speed setting possible. ? current limiter circuit (t he circuit actuated at i o = 1a when rf = 0.5 ? , rf determines the limiter value.). ? kickback absorption circuit built in. ? soft switching circuit achieves low power consumption, lo w loss, and low noise driving at a time of phase change. ? hb built in. ? lock protection and automatic reset functions incorporated (i ncluding a circuit that cha nges the on/off ratio according to the power supply voltage). ? rd (lock detection) output. ? thermal protection circuit incorp orated (design guaranteed). ordering number : ena0082 monolithic digital ic single-phase full-wave driver for fan motor any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before using any sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated val ues (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein.
LB11660RV no.a0082-2/9 absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit v cc maximum power supply voltage v cc max 20 v vm maximum power supply voltage vm max 20 v out pin maximum output current i out max rf 0.39 ? 1.5 a out pin output withstand voltage 1 v out max1 20 v out pin output withstand voltage 2 v out max2 t 0.4 s 26.5 v pre pin maximum source current ipso max 30 ma pre pin maximum sink current ipsi max -7 ma pre pin output withstand voltage vp max 20 v hb maximum output current hb 10 ma vth input pin withstand voltage vth max 7 v rd output pin output withstand voltage vrd max 18 v rd output current ird max 10 ma allowable power dissipation pd max mounted on a specified board * 1 0.8 w operating temperature range topr * 2 -30 to 95 c storage temperature range tstg -55 to 150 c *1 a circuit board for mounting (114.3mm 76.1mm 1.6mm, glass epoxy resin) *2 tj max = 150 c. must be used within the operating temper ature range in which tj does not exceed 150 c. recommended operating range at ta = 25 c parameter symbol conditions ratings unit v cc power supply voltage v cc 4 to 15 v vm power supply voltage v cc 3 to 15 v current limiter operating range ilim 0.6 to 1.2 a vth input level voltage range vth 0 to 6 v hall input common phase input voltage range vicm 0.2 to 3 v electrical characteristics at ta = 25 c, v cc = 12v, unless otherwise specified ratings parameter symbol conditions min typ max unit circuit current i cc 1 during driving 9 12 ma hb voltage vhb ihb=5ma 1.05 1.25 1.40 v 6vreg voltage v6vreg 6vreg=5ma 5.80 6 6.20 v ct pin h level voltage vcth 3.4 3.6 3.8 v ct pin l level voltage vctl 1.4 1.6 1.8 v ict pin charge current 1 ictc1 v cc =12v 1.7 2.2 2.7 a ict pin charge current 2 ictc2 v cc =6v 1.3 1.8 2.3 a ict pin discharge current 1 ictd1 v cc =12v 0.11 0.15 0.19 a ict pin discharge current 2 ictd2 v cc =6v 0.34 0.44 0.54 a ict charge/discharge ratio 1 rct1 v cc =12v 12 15 18 ict charge/discharge ratio 2 rct2 v cc =6v 3 4 5 ict charge/discharge ratio threshold voltage vrct 6 6.6 7.3 v vth bias current ibvth -2 -1 0 a out output h saturation voltage voh i o =200ma, r l =1 ? 0.6 0.8 v pre output l saturation voltage vpl i o =5ma 0.2 0.4 v pre output h saturation voltage vph i o = -20ma 0.9 1.2 v continued on next page.
LB11660RV no.a0082-3/9 continued from preceding page. ratings parameter symbol conditions min typ max unit current limiter vrf v cc -vm 450 500 550 mv pwm output h level voltage vpwmh 2.2 2.5 2.8 v pwm output l level voltage vpwml 0.4 0.5 0.7 v pwm external c capacitor charge current ipwm1 -23 -18 -14 a pwm external c capacitor discharge current ipwm2 18 24 30 a pwm oscillation frequency fpwm c=200pf 19 23 27 khz hall input sensitivity vhn zero peak value (including offset and hysteresis) 15 25 mv rd output pin l voltage vrd ird=5ma 0.2 0.3 v rd output pin leak current irdl vrd=7v 30 a thermal protection circuit thd design target value * 3 150 180 210 c *3 these are design guarantee values, and are not tested. the thermal protection circuit is implemented to prevent the ic from being thermally damaged or burned when exposed to an environment exceeding th e guaranteed operating temperature ra nge. thermal design must be carried out so that the thermal protection circuit will never be activated while the fan is running in a stable condition. package dimensions unit : mm (typ) 3178b truth table in- in+ vth cpwm ct out1 out2 pre1 pre2 rd mode h l h off l h l h l h off h h l rotating - drive h l off off l h l h h l l off off h l l rotating - regeneration h l off off l h l h - - h off off h l off lock protection cpwm-h: cpwm>vth, cpwm-l: cpwm LB11660RV no.a0082-4/9 pin assignment sample application circuit 1 out2 1 2 3 4 11 15 8 5 10 9 7 12 6 LB11660RV 13 14 16 v cc vth vm rmi cpwm rd in+ hb in- ct 6vreg gnd out1 pre2 pre1 top view v cc rd out1 out2 ct=0.47 to 1 f ct vth in+ in- cpwm *5 cp=200pf * f=23khz cp=100pf * f=46khz *1 *7 h *2 hb gnd *6 *8 6vreg vm rf *4 control voltage rmi r3 pre1 pre2 *3 *9 cm=4.7
LB11660RV no.a0082-5/9 * 1 grd of the ic is connected to the control circuit power supply system and grd of the external n-channel is connected to the motor power supply system. groundings must be installed separately and all external control components must be connected to the gnd line of the ic. * 2 for the cm capacitor, that is a power stabilization ca pacitor for pwm drive and fo r absorption of kick-back, a capacitance of 4.7 f/25v or higher must be used. the cm capacitor must be connected without fail to prevent the ic from being damaged when power is tuned on or off. * 3 1) control voltage the pwm duty ratio is determined by comparing the vth pin voltage and the pwm oscillation waveforms. when the vth pin voltage drops, the 'on' duty ratio in creases, and when it drops to or below the pwm output l level voltage, the duty ratio is 100%. 2) thermistor in thermistor applications, the 6vreg voltage is usually divided by a resistor, and the voltage thus generated is supplied to the vth pin. the pwm duty ratio is varied by the changes in the vt h pin voltage which result from changes in temperature. * 4 < setting the current limiter > the current limiter is actuated when the voltage of the current-sensing resistors between v cc and vm increases to 0.5v or more. since the current of a current limiter circuit is limited by the current determined by i o = vrf/rf (where vrf = 0.5v typ, rf: current-sensing resistance), the current limiter is actuated at i o = 1a when rf = 0.5 ? . the rf resistor must be connected without fail, and its constant must be with in the recommended operating range for current limiters. * 5 wiring need to be short to prevent carrying of the noise. th e hall input circuit is a compar ator having a hysteresis of 20mv. it is recommended that the hall input level be more than three times (60mvp-p) this hysteresis. * 6 < pwm oscillation frequency setting capacitor > the oscillation frequency is 23khz when cp = 200pf and 46khz when cp = 100pf, and this serves as the pwm fundamental frequency. for the most part, the pwm frequency can be obtained from the following formula: f [khz] (4.6 10 6 ) c [pf] * 7 this is the open collector type output, which outputs ''l'' durin g rotation. it is set to 'off' when a lock is detected. this output is left open when not in use. * 8 this is a hall element bias pin, that is, the 1.25v constant-voltage output pin. * 9 lowest speed setting pin for speed control. the minimum output duty setting is made with r3 and r4. the r4 is left open to stop operation at a duty ratio of 0%.
LB11660RV no.a0082-6/9 rotation speed control chart minimum output duty vth (v) pwm duty(%) duty100% duty0% vpwml vpwmh rmi cpwm 2.5v 0.5v pwm control variable speed full speed 0v on duty rotation set to minimum speed rmi voltage vth voltage on off
LB11660RV no.a0082-7/9 internal equivalent circuit diagram a mplifier with hysteresis cpwm m control circuit hall in- in+ v cc out1 rd out2 delay circuit delay circuit vth gnd 6vreg constant volta g e circuit thermal protection circuit charge/ discharge circuit 1.25v hb rmi ct vm pre-driver pre-driver pre2 pre1 oscillation circuit
LB11660RV no.a0082-8/9 sample application circuit 2 v cc rd out1 out2 ct=0.47 to 1 f ct vth in+ in- cpwm *5 h hb gnd *8 6vreg vm r l rmi r3 th rtu pre1 pre2 cm=4.7 * f=23khz cp=100pf * f=43khz
LB11660RV no.a0082-9/9 ps this catalog provides information as of december, 2006. specifications and information herein are subject to change without notice. specifications of any and all sanyo semiconductor pr oducts described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high- quality high-reliability products. however, any and all semiconductor products fail with some probabi lity. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property . when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor produc ts (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording , or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circui t parameters) herein is for example only; it is not guaranteed for volume production. sanyo semicondu ctor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
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