elektronische bauelemente SCS70DSTN 0.07 a, 70 v silicon epitaxial planar schottky barrier rectifiers 22-nov-2013 rev. b page 1 of 1 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen & lead-free description planar schottky barrier diode with an integrated guard ring for stress protection features low diode capacitance low forward voltage guard ring protected high breakdown voltage application ultra high-speed switching voltage clamping mobile communication ,digital (still) cameras , pdas and pcmcia cards marking package information package mpq leader size wbfbp-02c 10k 7 inch maximum ratings characteristics (t a =25 c unless otherwise specified) paramete r s y mbol limits unit dc reverse voltage v r 70 v forward continuous current i f 70 ma peak forward surge current @ tp< 10ms i fsm 100 ma power dissipation p d 250 mw thermal resistance junction to ambient r ja 400 / w junction, storage temperature range t j , t stg 125, -55 ~ 150 electrical characteristics (t a =25 c unless otherwise specified) parameters s y mbol min. t yp . max. unit test conditions - - 0.41 i f =1ma - - 0.75 i f =10ma forward voltage v f - - 1 v i f =15ma - - 100 v r =50v reverse current 1 i r - - 500 na v r =70v diode capacitance c d - 2 - pf v r = 0v, f=1.0mhz note: 1. pulse test: pulse width=300 s;duty cycle=0.02. wbfbp-02c s5 millimete r millimete r ref. min. max. ref. min. max. a 0.950 1.050 g 0.275 0.325 b 0.550 0.650 h 0.275 0.325 c 0.450 0.550 j 0.275 0.325 d 0.450 ref. k 0.675 0.725 e 0.400 ref. l 0.010 0.070 f 0.275 0.325 m 0.010 ref. ? ? ? ? a c b f m m g j h k e d l
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