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inchange semiconductor product specification silicon npn power transistors 2N5264 description ? with to-3 package ? high speed switching ?high reliability applications ? switching regulators ? dc-dc convertor ? solid state relay ? general purpose power amplifiers pinning (see fig.2) pin description 1 base 2 emitter 3 collector maximun ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 180 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i b base current 2 a p t total power dissipation t c =25 ?? 87 w t j junction temperature 165 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 1.0 ??/w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N5264 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a ; i b =0 180 v v cesat collector-emitter saturation voltage i c =7a; i b =1.4a 1.5 v v besat base-emitter saturation voltage i c =7a; i b =1.4a 1.2 v i cbo collector cut-off current v cb =300v; i e =0 1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe dc current gain i c =1a ; v ce =5v 30 300 f t transition frequency i c =1a ; v ce =10v 50 mhz
inchange semiconductor product specification 3 silicon npn power transistors 2N5264 package outline fig.2 outline dimensions

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