'j.e.iie.u tss-ml-donductoi zpioducti, cx u 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 power transistors 20 amp, 150 v, double diffused npn mesa 2n6354 2n6496 features ? collector-base voltage: up to 150v ? peak collector current: 30a ? rise time: ^ 500ns ( . fall time-. < 500ns ? @ 'c "p ' 12? description these double diffused glass passivated mesa power transistors combine fast- switching, low saturation voltage and rugged s/b capability. they are de- signed for use in switching regulators, converters, inverters and switching- control amplifiers. absolute maximum ratings" collector-base voltage, vc| collector-emitter sustaining" voltage, vcer |sus, (1) . yceo(sus) 2m8334 150v 120v emitter-base voltage, vebo ." .'...'..' 6,5v collector current, lc continuous ida collector current, icm peak - 12a base current, i, continuous 5a power dissipation, 25c case 140w . operating and storage temperature range ,?65 to 200c (1) with rbe < 500 * jedec registered values. 3ni4m 150v 130v 110v 7v isa 5a 140w mechanical specifications note: lndi m?y ba toktorwl to within '/it" of dim provided temperature- time exposure it l?? then 20c lorl 2n6354, 2n649b _| ini. a b c 0 e r g h 1 k l m .875 max. .135 max 250-.450 312 win 038-.043 dia 188 max. rao. 1 177-1 197 .656-675 205-225 420- 440 -525 max sao .151- 161 dia. mm. 22 23 max 3 43 max 635-1143 7,92 min 0.97-109 dia. 4.78 max rao 2990-3040 1664-17 15 521-572 1067-11.18 13.34 max rao. 3 84-4 09 dia to-3 nj serm-conductors reserves the right to change test conditions, parameters limits and package dimensions without not,ce mtonnat.ontum.shcd by nj semi-conductors is believed to be both accurate and reliable at the time of gz to press however nj serm-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electric*! specifications (at 25'c unless noted) test d.c. current gain (note 1) d.c. current gain (note 1) d.c. current gain (note 1) collector saturation voltage (note 1) collector saturation voltage (note 1) collector saturation voltage (note 1) base saturation voltage (note 1) base saturation voltage (note 1} collector-emitter sustaining voltage (note 2) collector-emitter sustaining voltage (note 2) collector-emitter sustaining voltage (note 2) emitter-base voltage collector cutoff current collector cutoff current collector cutoff current collector cutoff current, 125c collector cutoff current, 150c emitter cutoff current magnitude of small signal forward ? current transfer ratio collector capacitance thermal resistance: junction-to-case symbol hfe hfe i>fe vce ( vce lull vbe (ill) w vb (?t) vceo |iu<) vcex isi") \j "ces |,ui| vebo 'ceo 'ceo 'cev 'cev 'cev u w cob "l)jc jn63s4 min 20 10 ? i ? ? ? ? 120 - 130 6.5 ? ? ? ? - ? 8.0 ? ' ? ' max 150 100 i d.f> 1.0 ? 1.3* 2.0 - - ? ? 5 20 10 20 ? 5.0 - 300 .25 2n649c min ? 12 ? i - ? i i 100 ? 130 7.0 ? ? ? ? ? ? 12 ? ? max - 100 i 1.0 - -_ 2.0 i ? ? ? ? ? 20 ? 25 50 ? 300 1.25 unit! v v v v v v v v v v ma ma ma ma ma ma pf jp [\ht test conditions lc = 2a, vce = 5v lc = 5a. vce = 2v lc = 8a, vce = 2v lc = 10a, vce = 2v lc = 10a, vce = 5v lc = 12a, vce := 5v lc = 5a, 1, = .5a lc = 8a. 1, = .8a i0 = ida, 1, = 1.0a t = 12a, ib = 1.2a lc_= 20a, 1, = 5a lc = 5a, ib = 0.5a lc = 8a, 1, = 0.8a lc = ida, \i = 1a lc = 20a, i6 = 5a lc = 0.2a lc = 0.2a v8 = -1.5v l, = 0 rbe = 100 ? rbe = 50 a, lr = 0.2a rbe = 100 n. lc = 0.2a ie= 5ma ie = 50ma vcb =r 150v vc = 55v vce = 70v vce = 100v vce - 110v, vae = -1.5v vc = 130v, vbe = 0 vce = 140v, vbe = -1-5v vce = 140v, v8e =s 0 vci = 140v vce = 85v, vbe = -1.5v vce = 100v, vhf = -1.5v vce = 130v, vbe = 0v vbe = -5v vbe = -6.5v vb = -7v vce = 10v, lc = 2a, f = 5 mhz vce = 10v, lc = 1a, f = 10 mhz vc, = 10v, f = 1 mhz vce = 10v, lc = 10a vce - 20v, lc = 1a notn: 1. pulse width = 25s; duty cycle s 1%- voltage clamped at maximum collector-emitter voltage * jedec registered values.
|
