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| !"" # $ "" % &'!( ) '!( doc. no. 5sya1651-02 aug 02 * $ + * + * , ) (t j = 25c, unless specified otherwise) - +. / 0 maximum reverse voltage v rrm 1200 v dc forward current i f 100 a maximum forward current i fm limited by t jmax 200 a operating temperature t j -40 .. +150 c / (t j = 25c, unless specified otherwise) - +. / + ) 0 t j = 25 c 1.7 1.9 2.3 v forward voltage v f i f = 100 a t j = 125 c 1.9 v t j = 25 c 100 a reverse leakage current i r v r = 1200 v t j = 125 c 1.2 ma reverse recovery current i rrm 70 a reverse recovery charge q rr 18 c reverse recovery time t rr 400 ns reverse recovery energy e rec i f = 100 a, v cc = 600 v, di/dt = 1600 a/s, l = 50 nh, t j = 125 c, inductive load, switch : 5smx12l1251 6.5 mj % 1% 23 !, !"" 23 !, !"" / - 0 overall die l x w 9.24 x 9.24 mm exposed front metal l x w7.6 x 7.6 mm dimensions thickness 325 15 m front aisi1 4.2 m metallization back 1) ai / ti / ni / ag 1.2 m 1) for assembly instructions refer to : igbt and diode chips from abb switzerland ltd, semiconductors, doc. no. 5sya2033-01 april 02. 4 % 5 & doc. no. 5sya1651-02 aug 02 fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abbsem.com |
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