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| inchange semiconductor product specification silicon npn power transistors 2SD2400 description ? with to-220f package ? complement to type 2sb1569 ? high transition frequency ? collector power dissipation: p c =20w(t c =25 ?? ) applications ? for low frequency power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 120 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 1.5 a i cm collector current-peak 3 a t a =25 ?? 2.0 p c collector dissipation t c =25 ?? 20 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD2400 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =1ma ;i b =0 120 v v (br)cbo collector-base breakdown voltage i c =50 | a ;i e =0 120 v v (br)ebo emitter-base breakdown voltage i e =50 | a ;i c =0 5 v v cesat collector-emitter saturation voltage i c =1a ;i b =0.1a 2.0 v v besat base-emitter saturation voltage i c =1a ;i b =0.1a 1.5 v i cbo collector cut-off current v cb =120v; i e =0 1.0 | a i ebo emitter cut-off current v eb =4v; i c =0 1.0 | a h fe dc current gain i c =0.1a ; v ce =5v 60 320 f t transition frequency i c =0.1a ; v ce =5v;f=30mhz 80 mhz c ob collector output capacitance i e =0; v cb =10v; f=1mhz 20 pf ? h fe classifications d e f 60-120 100-200 160-320 inchange semiconductor product specification 3 silicon npn power transistors 2SD2400 package outline fig.2 outline dimensions |
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